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    BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES
    4.
    发明申请
    BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES 有权

    公开(公告)号：US20250006552A1

    公开(公告)日：2025-01-02

    申请号：US18753144

    申请日：2024-06-25

    Applicant: Applied Materials Inc.

    Inventor： Liqi Wu ,  Rongjun Wang ,  Feng Q. Liu ,  Qihao Zhu ,  Jiang Lu ,  David Thompson ,  Xianmin Tang

    IPC: H01L21/768 ,  H01L21/3213

    Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.

    Selective Passivation Of Damaged Nitride
    5.
    发明申请
    Selective Passivation Of Damaged Nitride 有权

    公开(公告)号：US20230136499A1

    公开(公告)日：2023-05-04

    申请号：US17844185

    申请日：2022-06-20

    Applicant: Applied Materials, Inc.

    Inventor： Shumao Zhang ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez ,  Le Zhang ,  David T. Or ,  Mark Saly ,  Jiang Lu

    IPC: H01L21/02

    Abstract: Methods for selectively depositing on self-assembled monolayer (SAM) are disclosed. Some embodiments of the disclosure utilize a precursor of a Formula (I), Formula (II), Formula (III), and Formula (IV): RnSi(NR′R″)(4-n) (III), RnSiX(4-n) (IV), wherein R1 and R2 are independently selected from substituted or unsubstituted C1-C20 alkyl, or R1 and R2 form a substituted or unsubstituted C1-C20 cycloalkyl ring, and wherein R3, R4, R5, R6, Rn are independently selected from hydrogen, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C1-C20 alkoxy, and substituted or unsubstituted C1-C20 vinyl, X is a halide selected from Cl, Br, and I, and n is an integer from 1 to 3, to form a self-assembled monolayer (SAM) on a damaged silicon nitride layer to prevent critical dimension blow out of a feature in a silicon nitride layer substrate.

    Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film
    6.
    发明授权
    Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film 有权

    公开(公告)号：US10600685B2

    公开(公告)日：2020-03-24

    申请号：US15823422

    申请日：2017-11-27

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Daping Yao ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

    IPC: H01L21/44 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

    Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.

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