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公开(公告)号:US10453657B2
公开(公告)日:2019-10-22
申请号:US15642002
申请日:2017-07-05
Applicant: APPLIED MATERIALS, INC.
Inventor: Daping Yao , Hyman W. H. Lam , John C. Forster , Jiang Lu , Can Xu , Dien-Yeh Wu , Paul F. Ma , Mei Chang
IPC: H01J37/32 , C23C16/513 , C23C16/505 , C23C16/52 , C23C16/455 , C23C16/509 , C23C16/06
Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
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公开(公告)号:US11133155B2
公开(公告)日:2021-09-28
申请号:US16578602
申请日:2019-09-23
Applicant: APPLIED MATERIALS, INC.
Inventor: Daping Yao , Hyman W. H. Lam , John C. Forster , Jiang Lu , Can Xu , Dien-Yeh Wu , Paul F. Ma , Mei Chang
IPC: C23C16/52 , H01J37/32 , C23C16/513 , C23C16/505 , C23C16/455 , C23C16/509 , C23C16/06
Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
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公开(公告)号:US10752990B2
公开(公告)日:2020-08-25
申请号:US15471291
申请日:2017-03-28
Applicant: Applied Materials, Inc.
Inventor: Daping Yao , Kenric Choi , Xiaoxiong Yuan , Jiang Lu , Can Xu , Paul F. Ma , Mei Chang
IPC: C23C16/455 , C23C16/44 , C23C16/448 , C23C16/18 , F16K31/12 , F16K31/60
Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.
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4.
公开(公告)号:US10600685B2
公开(公告)日:2020-03-24
申请号:US15823422
申请日:2017-11-27
Applicant: APPLIED MATERIALS, INC.
Inventor: Daping Yao , Jiang Lu , Can Xu , Paul F. Ma , Mei Chang
IPC: H01L21/44 , H01L21/768 , H01L23/532 , H01L21/285
Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.
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公开(公告)号:US20170275754A1
公开(公告)日:2017-09-28
申请号:US15471291
申请日:2017-03-28
Applicant: Applied Materials, Inc.
Inventor: Daping Yao , Kenric Choi , Xiaoxiong Yuan , Jiang Lu , Can Xu , Paul F. Ma , Mei Chang
IPC: C23C16/455 , F16K31/60 , F16K31/12
Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.
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