Invention Application
- Patent Title: BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES
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Application No.: US18753144Application Date: 2024-06-25
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Publication No.: US20250006552A1Publication Date: 2025-01-02
- Inventor: Liqi Wu , Rongjun Wang , Feng Q. Liu , Qihao Zhu , Jiang Lu , David Thompson , Xianmin Tang
- Applicant: Applied Materials Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials Inc.
- Current Assignee: Applied Materials Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3213

Abstract:
Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.
Information query
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