公开(公告)号：US20240047246A1

公开(公告)日：2024-02-08

申请号：US18381565

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Fernando M. Silveira ,  Chunlei Zhang ,  Phillip Criminale ,  Jaeyong Cho

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/46 ,  C23C16/50 ,  C23C16/56

CPC classification number: H01L21/67248 ,  H01L21/67017 ,  H01J37/3299 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  C23C16/505 ,  C23C16/52 ,  C23C16/46 ,  C23C16/50 ,  C23C16/56 ,  H01L21/67103

Abstract: An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a temperature controlled thermal fluid to a fluid channel of a workpiece carrier and receives the thermal fluid from the fluid channel. A proportional valve is between the heat exchanger and the fluid channel to control the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A pneumatic valve is also between the heat exchanger and the fluid channel also to control the rate of flow of thermal fluid from the heat exchanger and the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve and the pneumatic valve in response to the measured temperature to adjust the rate of flow of the thermal fluid.

公开(公告)号：US11837479B2

公开(公告)日：2023-12-05

申请号：US15217513

申请日：2016-07-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Fernando M. Silveira ,  Chunlei Zhang ,  Phillip Criminale ,  Jaeyong Cho

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/46 ,  C23C16/50 ,  C23C16/56

CPC classification number: H01L21/67248 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3299 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109

Abstract: An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a temperature controlled thermal fluid to a fluid channel of a workpiece carrier and receives the thermal fluid from the fluid channel. A proportional valve is between the heat exchanger and the fluid channel to control the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A pneumatic valve is also between the heat exchanger and the fluid channel also to control the rate of flow of thermal fluid from the heat exchanger and the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve and the pneumatic valve in response to the measured temperature to adjust the rate of flow of the thermal fluid.

公开(公告)号：US20160042961A1

公开(公告)日：2016-02-11

申请号：US14453023

申请日：2014-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Hamid Tavassoli ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid D. Rauf ,  Richard Fovell ,  Fernando M. Silveira ,  Mark Markovsky

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/3233 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32908

Abstract: A plasma reactor has an electron beam source as a plasma source and a rotation motor coupled to rotate the workpiece support about a rotation axis that is transverse to an emission path of said electron beam source.

Abstract translation: 等离子体反应器具有作为等离子体源的电子束源和旋转马达，该旋转马达被耦合以围绕横向于所述电子束源的发射路径的旋转轴线旋转工件支撑件。

公开(公告)号：US20230187176A1

公开(公告)日：2023-06-15

申请号：US17551698

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Kostiantyn Achkasov ,  Nicolas J. Bright ,  Fernando M. Silveira ,  Yang Yang ,  Yue Guo

IPC: H01J37/32

CPC classification number: H01J37/32247 ,  H01J37/32091 ,  H01J37/321

Abstract: A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.

公开(公告)号：US10410889B2

公开(公告)日：2019-09-10

申请号：US14755646

申请日：2015-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： S. M. Reza Sadjadi ,  Haitao Wang ,  Jie Zhou ,  Tza-Jing Gung ,  Chunlei Zhang ,  Fernando M. Silveira

IPC: C23C16/00 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/52

Abstract: In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber.

公开(公告)号：US09214315B2

公开(公告)日：2015-12-15

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. Silveira ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: B23K10/00 ,  H01J37/20 ,  H05H1/34

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。