公开(公告)号：US20180294200A1

公开(公告)日：2018-10-11

申请号：US15480337

申请日：2017-04-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonard TEDESCHI ,  Benjamin SCHWARZ ,  Changhun LEE ,  Ping Han Hsieh ,  Adauto DIAZ ,  Daniel T. McCormick

IPC: H01L21/66

Abstract: Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

公开(公告)号：US20180122655A1

公开(公告)日：2018-05-03

申请号：US15784846

申请日：2017-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Vahid FIROUZDOR ,  Roberto COTLEAR ,  Michael NICHOLS ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE

IPC: H01L21/67 ,  B01D39/20 ,  B01D46/24 ,  B01D46/10

CPC classification number: H01L21/67069 ,  B01D39/2027 ,  B01D46/10 ,  B01D46/2403 ,  B01D2239/1258 ,  B01D2275/202 ,  B01D2279/51

Abstract: Methods and apparatus for delivering one or more gases to a process chamber are provided herein. In some embodiments a gas delivery system includes a process chamber having an inner volume; a gas source panel; a gas line coupling the inner volume to the gas source panel; and a first gas filter disposed along the gas line proximate the inner volume, wherein the first gas filter comprises a filter element body having a first end and a second end opposite the first end, and a filtration efficiency of about 1 to about 5 log reduction value (LRV).

公开(公告)号：US20240321610A1

公开(公告)日：2024-09-26

申请号：US18676429

申请日：2024-05-28

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  H03K17/955

CPC classification number: H01L21/67259 ,  H01J37/32477 ,  H01J37/3288 ,  H01L22/12 ,  H03K17/955 ,  H01J2237/022

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20200152431A1

公开(公告)日：2020-05-14

申请号：US16189440

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Changhun LEE ,  Michael D. WILLWERTH ,  Valentin N. TODOROW ,  Hean Cheal LEE ,  Hun Sang KIM

IPC: H01J37/32 ,  G03F7/42

Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

公开(公告)号：US20150137681A1

公开(公告)日：2015-05-21

申请号：US14246419

申请日：2014-04-07

Applicant: Applied Materials, Inc.

Inventor： Siu Tang NG ,  Changhun LEE ,  Huutri DAO ,  Roberto Cesar COTLEAR

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4652

Abstract: Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods are disclosed. The plasma generation source (PGS) includes an enclosure body having multiple internal surfaces forming an internal chamber having input and output ports to respectively receive a precursor gas for generation of plasma and to discharge the plasma. A dielectric conduit assembly may guide the gas and the plasma away from the internal surface where particulates may be generated. The dielectric conduit assembly includes a first and second cross-conduit segments. The dielectric conduit assembly further includes parallel conduit segments extending from the second cross-conduit segment to distal ends which removably align with first cross-conduit interfaces of the first cross-conduit segment without leaving gaps. In this manner, the dielectric conduit assembly is easily serviced, and reduces and contains particulate generation away from the output port.

Abstract translation: 公开了采用具有可移除接口和相关组件和方法的介质导管组件的等离子体产生源。 等离子体发生源（PGS）包括具有多个内表面的外壳主体，形成具有输入和输出端口的内部腔室，以分别容纳用于产生等离子体的前体气体并排出等离子体。 电介质导管组件可以引导气体和等离子体远离可能产生微粒的内表面。 介电导管组件包括第一和第二交叉导管段。 电介质导管组件还包括从第二交叉导管段延伸到远端的平行导管段，其可移除地与第一交叉导管段的第一交叉导管接口对准，而不留下间隙。 以这种方式，电介质导管组件易于维护，并且减少并且包含远离输出端口的颗粒产生。

公开(公告)号：US20200335368A1

公开(公告)日：2020-10-22

申请号：US16391262

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip A. CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H03K17/955 ,  H01L21/66

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20150096589A1

公开(公告)日：2015-04-09

申请号：US14045786

申请日：2013-10-03

Applicant: Applied Materials, Inc.

Inventor： Danny Chien LU ,  Yi ZHOU ,  Changhun LEE

IPC: H01L21/02 ,  B08B7/00

CPC classification number: H01L21/02071 ,  B08B3/00 ,  C23G5/00 ,  H01J37/32082 ,  H01J37/32357

Abstract: Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having refractory metal portions disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon, forming a process gas comprising water vapor, maintaining a process pressure in the processing chamber above about 0.5 Torr, forming a plasma in the process gas to form an activated water vapor and exposing the refractory metal to the activated water vapor.

Abstract translation: 本发明的实施方案一般涉及使用水蒸汽等离子体处理去除和/或清洁其上设置有耐火金属部分的基底表面的方法。 在一个实施例中，用于清洁衬底表面的方法包括将衬底定位在处理室中，衬底具有设置在其上的难熔金属，形成包含水蒸气的工艺气体，将处理室中的工艺压力保持在约0.5以上 在工艺气体中形成等离子体以形成活化的水蒸气并将难熔金属暴露于活化的水蒸汽。

公开(公告)号：US20220293395A1

公开(公告)日：2022-09-15

申请号：US17199729

申请日：2021-03-12

Applicant: Applied Materials, Inc.

Inventor： Yongkwan KIM ,  Changhun LEE ,  Kyeong-Tae LEE ,  Chung Hoan KIM ,  Youngmin SHIN

IPC: H01J37/32 ,  G03F7/42

Abstract: A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof

公开(公告)号：US20200152425A1

公开(公告)日：2020-05-14

申请号：US16189451

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  John Anthony O'MALLEY, III

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.

公开(公告)号：US20180019104A1

公开(公告)日：2018-01-18

申请号：US15244718

申请日：2016-08-23

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  Anthony O'MALLEY

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/3211 ,  H01J37/32513 ,  H01J37/32697 ,  H01J37/32724 ,  H01J2237/166 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.