公开(公告)号：US20220293395A1

公开(公告)日：2022-09-15

申请号：US17199729

申请日：2021-03-12

Applicant: Applied Materials, Inc.

Inventor： Yongkwan KIM ,  Changhun LEE ,  Kyeong-Tae LEE ,  Chung Hoan KIM ,  Youngmin SHIN

IPC: H01J37/32 ,  G03F7/42

Abstract: A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof