公开(公告)号：US20180122655A1

公开(公告)日：2018-05-03

申请号：US15784846

申请日：2017-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Vahid FIROUZDOR ,  Roberto COTLEAR ,  Michael NICHOLS ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE

IPC: H01L21/67 ,  B01D39/20 ,  B01D46/24 ,  B01D46/10

CPC classification number: H01L21/67069 ,  B01D39/2027 ,  B01D46/10 ,  B01D46/2403 ,  B01D2239/1258 ,  B01D2275/202 ,  B01D2279/51

Abstract: Methods and apparatus for delivering one or more gases to a process chamber are provided herein. In some embodiments a gas delivery system includes a process chamber having an inner volume; a gas source panel; a gas line coupling the inner volume to the gas source panel; and a first gas filter disposed along the gas line proximate the inner volume, wherein the first gas filter comprises a filter element body having a first end and a second end opposite the first end, and a filtration efficiency of about 1 to about 5 log reduction value (LRV).

公开(公告)号：US20240404835A1

公开(公告)日：2024-12-05

申请号：US18804929

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Leonard M. TEDESCHI ,  Kartik RAMASWAMY ,  Benjamin CE SCHWARZ ,  Changgong WANG ,  Vahid FIROUZDOR ,  Sumanth BANDA ,  Teng-Fang KUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

公开(公告)号：US20200152425A1

公开(公告)日：2020-05-14

申请号：US16189451

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  John Anthony O'MALLEY, III

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.

公开(公告)号：US20180019104A1

公开(公告)日：2018-01-18

申请号：US15244718

申请日：2016-08-23

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  Anthony O'MALLEY

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/3211 ,  H01J37/32513 ,  H01J37/32697 ,  H01J37/32724 ,  H01J2237/166 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.