WAFER EDGE RING LIFTING SOLUTION
    4.
    发明申请

    公开(公告)号:US20240429088A1

    公开(公告)日:2024-12-26

    申请号:US18823303

    申请日:2024-09-03

    Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

    CRYOGENIC ELECTROSTATIC CHUCK
    5.
    发明申请

    公开(公告)号:US20210082730A1

    公开(公告)日:2021-03-18

    申请号:US16997300

    申请日:2020-08-19

    Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a base channel disposed therein, and a facility plate having a facility channel disposed therein. The facility plate includes a plate portion and a wall portion. The plate portion is coupled to the ESC base assembly and the wall portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the wall portion of the facility plate, and the seal assembly.

    TUNABLE TEMPERATURE CONTROLLED SUBSTRATE SUPPORT ASSEMBLY
    7.
    发明申请
    TUNABLE TEMPERATURE CONTROLLED SUBSTRATE SUPPORT ASSEMBLY 审中-公开
    可控温度控制基板支持总成

    公开(公告)号:US20160329231A1

    公开(公告)日:2016-11-10

    申请号:US15212946

    申请日:2016-07-18

    Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.

    Abstract translation: 本文所述的实施方案提供了一种基板支撑组件,其能够实现静电卡盘和加热组件之间的热传递的侧向和方位调节。 基板支撑组件包括具有基板支撑表面和下表面的主体,设置在主体中的一个或多个主电阻加热器,设置在主体中的多个可空调的加热器,以及耦合到多个 空间可调谐加热器,空间可调加热器控制器被配置为相对于多个空间可调谐加热器中的另一个来独立地控制多个空间可调加热器中的输出一个。

    SEMICONDUCTOR PROCESSING WITH COOLED ELECTROSTATIC CHUCK

    公开(公告)号:US20220262664A1

    公开(公告)日:2022-08-18

    申请号:US17174591

    申请日:2021-02-12

    Abstract: Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

    CRYOGENIC ELECTROSTATIC CHUCK
    9.
    发明申请

    公开(公告)号:US20200185248A1

    公开(公告)日:2020-06-11

    申请号:US16217036

    申请日:2018-12-11

    Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a refrigerant channel disposed therein, and a facility plate having a coolant channel disposed therein. The facility plate includes a plate portion and a flange portion. The plate portion is coupled to the ESC base assembly and the flange portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the flange portion of the facility plate, and the seal assembly.

    AZIMUTHALLY TUNABLE MULTI-ZONE ELECTROSTATIC CHUCK

    公开(公告)号:US20200037399A1

    公开(公告)日:2020-01-30

    申请号:US16595801

    申请日:2019-10-08

    Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.

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