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    WAFER EDGE RING LIFTING SOLUTION
    1.
    发明申请
    WAFER EDGE RING LIFTING SOLUTION 有权

    公开(公告)号：US20240429088A1

    公开(公告)日：2024-12-26

    申请号：US18823303

    申请日：2024-09-03

    Applicant: Applied Materials, Inc.

    Inventor： Michael R. RICE ,  Yogananda SARODE VISHWANATH ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Steven E. BABAYAN ,  Olivier LUERE ,  Denis Martin KOOSAU ,  Imad YOUSIF

    IPC: H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

    IN-SITU DEPOSITION PROCESS
    4.
    发明申请
    IN-SITU DEPOSITION PROCESS 审中-公开

    公开(公告)号：US20200027717A1

    公开(公告)日：2020-01-23

    申请号：US16391219

    申请日：2019-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Sang Wook PARK ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Jonathan Sungehul KIM ,  Lin YU ,  Zhonghua YAO ,  Olivier LUERE

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

    Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.

    PROCESSING WITH POWERED EDGE RING
    5.
    发明申请
    PROCESSING WITH POWERED EDGE RING 审中-公开

    公开(公告)号：US20190228952A1

    公开(公告)日：2019-07-25

    申请号：US16253655

    申请日：2019-01-22

    Applicant: Applied Materials, Inc.

    Inventor： Leonid DORF ,  Anurag Kumar MISHRA ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Denis M. KOOSAU ,  Sunil SRINIVASAN

    IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/67

    Abstract: Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The methods and related equipment described herein can improve the formation of the structures on substrates by controlling the curvature of the plasma-sheath boundary near the periphery of the substrate, for example, by generating a substantially flat plasma-sheath boundary over the entire substrate (i.e., center to edge). The methods and related equipment described below can provide control over the curvature of the plasma-sheath boundary, including generation of the flat plasma-sheath boundary by applying RF power to an edge ring surrounding the substrate using a separate and independent RF power source.

    HIGH VOLTAGE FILTER ASSEMBLY
    10.
    发明申请
    HIGH VOLTAGE FILTER ASSEMBLY 审中-公开

    公开(公告)号：US20200243303A1

    公开(公告)日：2020-07-30

    申请号：US16355153

    申请日：2019-03-15

    Applicant: Applied Materials, Inc.

    Inventor： Anurag Kumar MISHRA ,  James ROGERS ,  Leonid DORF ,  Rajinder DHINDSA ,  Olivier LUERE

    IPC: H01J37/32 ,  H01L21/683

    Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

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