公开(公告)号：US20200027717A1

公开(公告)日：2020-01-23

申请号：US16391219

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Jonathan Sungehul KIM ,  Lin YU ,  Zhonghua YAO ,  Olivier LUERE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.

公开(公告)号：US20200373149A1

公开(公告)日：2020-11-26

申请号：US16831217

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Xiaorui CUI ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Zhonghua YAO ,  Lin YU ,  Olivier LUERE ,  Jonathan Sungehul KIM

IPC: H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on the substrate includes pulsing a first gas precursor comprising an organic silicon compound onto a surface of the substrate. The method also includes disposing a first element from the first gas precursor onto the surface of the substrate. The method further includes maintaining a substrate temperature less than about 110 degrees Celsius while disposing the first element. A second gas precursor is pulsed onto the surface of the substrate. Additionally, the method includes disposing a second element from the second gas precursor to the first element on the surface of the substrate.