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107 条记录 (耗时 0.03 秒)

    Cervical pillow
    1.
    外观设计
    Cervical pillow 有权

    公开(公告)号：USD878806S1

    公开(公告)日：2020-03-24

    申请号：US29622370

    申请日：2017-10-17

    申请人： Ju-Yi Ma

    设计人： Ju-Yi Ma

    SEAT PAD
    2.
    发明申请
    SEAT PAD 审中-公开
    座垫

    公开(公告)号：US20150223607A1

    公开(公告)日：2015-08-13

    申请号：US14178210

    申请日：2014-02-11

    申请人： JU-YI MA

    发明人： JU-YI MA

    IPC分类号： A47C7/14 ,  A47C7/18

    CPC分类号： A47C7/14 ,  A47C3/025 ,  A47C3/0252 ,  A47C7/029 ,  A47C7/18

    摘要： A seat pad is provided. The seat pad includes a base plate, a meddle plate, a foam layer, a cushion member, a fixation plate and a fixation screw. The fixation plate is disposed correspondingly above a meddle region of the meddle plate, the meddle plate is disposed on the cushion member, the cushion member is disposed on the base plate, the fixation screw is disposed through a through hole of the base plate at a meddle region of the base plate and screwed with the fixation plate, and the foam layer is attached on the meddle plate. Whereby, the seat pad is simple in structure and easy to assemble and can obviate pressure of one's hips, and one's blood circulation will not be hindered and uncomfortableness due to sitting for a long time can be obviated.

    摘要翻译： 提供座垫。 座垫包括基板，中间板，泡沫层，缓冲构件，固定板和固定螺钉。 所述固定板相对地设置在所述中间板的中间区域的上方，所述中间板设置在所述缓冲构件上，所述缓冲构件设置在所述基板上，所述固定螺钉通过所述基板的通孔设置在 底板的中间区域并与固定板拧紧，泡沫层附着在中间板上。 由此，座垫结构简单，易于组装，可以消除臀部的压力，不会妨碍血液循环，可以避免长时间坐着不舒服。

    SOURCE DETECTION BY SPECTRUM SENSING
    4.
    发明申请
    SOURCE DETECTION BY SPECTRUM SENSING 审中-公开
    通过光谱感测的源检测

    公开(公告)号：US20150072625A1

    公开(公告)日：2015-03-12

    申请号：US14110447

    申请日：2012-04-04

    申请人： Parisa Cheraghi ,  Yi Ma ,  Rahim Tafazolli

    发明人： Parisa Cheraghi ,  Yi Ma ,  Rahim Tafazolli

    IPC分类号： H04B17/00

    CPC分类号： H04B17/318 ,  H04L27/0006 ,  H04W16/14

    摘要： A source detection system for detecting wireless communication signals, the system comprising: receiving means for receiving a signal; and processing means arranged to filter the signal to separate it into a plurality of frequency components, determine an energy content for each of the frequency components, calculate a measure of the difference between the energy contents of respective frequency components, and make a determination, from said measure, whether the signal has been transmitted from a source.

    摘要翻译： 一种用于检测无线通信信号的源检测系统，所述系统包括：接收装置，用于接收信号; 以及处理装置，被布置为对信号进行滤波以将其分离成多个频率分量，确定每个频率分量的能量含量，计算各个频率分量的能量内容之间的差的度量，并且从 所述测量，信号是否已经从源传输。

    Rectification of characters and text as transform invariant low-rank textures
    6.
    发明授权
    Rectification of characters and text as transform invariant low-rank textures 有权
    将字符和文本整理为变形不变的低阶纹理

    公开(公告)号：US08774558B2

    公开(公告)日：2014-07-08

    申请号：US13310730

    申请日：2011-12-03

    申请人： Xin Zhang ,  Zhengdong Zhang ,  Xiao Liang ,  Zhouchen Lin ,  Yi Ma

    发明人： Xin Zhang ,  Zhengdong Zhang ,  Xiao Liang ,  Zhouchen Lin ,  Yi Ma

    IPC分类号： G06K9/36 ,  G06K9/32

    CPC分类号： G06K9/3275 ,  G06K9/6249 ,  G06K2209/01

    摘要： A “Text Rectifier” provides various techniques for processing selected regions of an image containing text or characters by treating those images as matrices of low-rank textures and using a rank minimization technique that recovers and removes image deformations (e.g., affine and projective transforms as well as general classes of nonlinear transforms) while rectifying the text or characters in the image region. Once distortions have been removed and the text or characters rectified, the resulting text is made available for a variety of uses or further processing such as optical character recognition (OCR). In various embodiments, binarization and/or inversion techniques are applied to the selected image regions during the rank minimization process to both improve text rectification and to present the resulting images of text to an OCR engine in a form that enhances the accuracy of the OCR results.

    摘要翻译： “文本整流器”提供了通过将这些图像作为低阶纹理矩阵来处理包含文本或字符的图像的所选区域的各种技术，并且使用恢复和去除图像变形的秩最小化技术（例如，仿射和投影变换为 以及非线性变换的一般类），同时整理图像区域中的文本或字符。 一旦失真被消除并且文本或者字符被纠正，所得到的文本可用于各种用途或进一步的处理，例如光学字符识别（OCR）。 在各种实施例中，在秩最小化处理期间将二值化和/或反转技术应用于所选择的图像区域，以改善文本校正，并以提高OCR结果的准确性的形式向OCR引擎呈现文本的所得图像 。

    Methods for fabricating memory cells having fin structures with smooth sidewalls and rounded top corners and edges
    7.
    发明授权
    Methods for fabricating memory cells having fin structures with smooth sidewalls and rounded top corners and edges 有权
    用于制造具有平滑侧壁和圆形顶角和边缘的翅片结构的存储单元的方法

    公开(公告)号：US08563441B2

    公开(公告)日：2013-10-22

    申请号：US12111122

    申请日：2008-04-28

    申请人： Yi Ma ,  Robert Bertram Ogle

    发明人： Yi Ma ,  Robert Bertram Ogle

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/311

    CPC分类号： H01L21/324 ,  H01L21/3247 ,  H01L27/11568 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/7854 ,  H01L29/792

    摘要： Methods for fabricating a semiconductor FIN structure with smooth sidewalls and rounded top corners and edges is disclosed. A method includes forming a plurality of semiconductor FIN structures. A sacrificial oxide layer is formed on the top surface and the sidewall surfaces of the plurality of semiconductor FIN structures for rounding the corners and edges between the top surfaces and the sidewall surfaces of the plurality of semiconductor FIN structures. The sacrificial oxide layer is removed with a high selectivity oxide etchant. The plurality of semiconductor FIN structures are annealed in a hydrogen environment. A tunnel oxide is formed over the plurality of semiconductor FIN structures.

    摘要翻译： 公开了制造具有平滑侧壁和圆角顶角和边缘的半导体FIN结构的方法。 一种方法包括形成多个半导体FIN结构。 在多个半导体FIN结构的顶表面和侧壁表面上形成牺牲氧化物层，用于使多个半导体FIN结构的顶表面和侧壁表面之间的角和边缘倒圆。 用高选择性氧化物蚀刻剂除去牺牲氧化物层。 多个半导体FIN结构在氢环境中退火。 在多个半导体FIN结构上形成隧道氧化物。

    RECTIFICATION OF CHARACTERS AND TEXT AS TRANSFORM INVARIANT LOW-RANK TEXTURES
    8.
    发明申请
    RECTIFICATION OF CHARACTERS AND TEXT AS TRANSFORM INVARIANT LOW-RANK TEXTURES 有权
    字符和文本的修正作为变换不变的低排序纹理

    公开(公告)号：US20120134588A1

    公开(公告)日：2012-05-31

    申请号：US13310730

    申请日：2011-12-03

    申请人： Xin Zhang ,  Zhengdong Zhang ,  Xiao Liang ,  Zhouchen Lin ,  Yi Ma

    发明人： Xin Zhang ,  Zhengdong Zhang ,  Xiao Liang ,  Zhouchen Lin ,  Yi Ma

    IPC分类号： G06K9/34

    CPC分类号： G06K9/3275 ,  G06K9/6249 ,  G06K2209/01

    摘要： A “Text Rectifier” provides various techniques for processing selected regions of an image containing text or characters by treating those images as matrices of low-rank textures and using a rank minimization technique that recovers and removes image deformations (e.g., affine and projective transforms as well as general classes of nonlinear transforms) while rectifying the text or characters in the image region. Once distortions have been removed and the text or characters rectified, the resulting text is made available for a variety of uses or further processing such as optical character recognition (OCR). In various embodiments, binarization and/or inversion techniques are applied to the selected image regions during the rank minimization process to both improve text rectification and to present the resulting images of text to an OCR engine in a form that enhances the accuracy of the OCR results.

    摘要翻译： “文本整流器”提供了通过将这些图像作为低阶纹理矩阵来处理包含文本或字符的图像的选定区域的各种技术，并且使用恢复和去除图像变形的秩最小化技术（例如，仿射和投影变换为 以及非线性变换的一般类），同时整理图像区域中的文本或字符。 一旦失真被消除并且文本或者字符被纠正，则所得到的文本可用于各种用途或进一步的处理，例如光学字符识别（OCR）。 在各种实施例中，在秩最小化处理期间将二值化和/或反转技术应用于所选择的图像区域，以改善文本校正，并以提高OCR结果的准确性的形式向OCR引擎呈现文本的所得图像 。

    3D INTEGRATED CIRCUIT SYSTEM AND METHOD
    9.
    发明申请
    3D INTEGRATED CIRCUIT SYSTEM AND METHOD 审中-公开
    3D集成电路系统和方法

    公开(公告)号：US20110272775A1

    公开(公告)日：2011-11-10

    申请号：US13183373

    申请日：2011-07-14

    申请人： Eunha KIM ,  Jeremy WAHL ,  Shenqing FANG ,  YouSeok SUH ,  Kuo-Tung CHANG ,  Yi MA ,  Rinji SUGINO ,  Jean YANG

    发明人： Eunha KIM ,  Jeremy WAHL ,  Shenqing FANG ,  YouSeok SUH ,  Kuo-Tung CHANG ,  Yi MA ,  Rinji SUGINO ,  Jean YANG

    IPC分类号： H01L29/02

    CPC分类号： H01L21/02675 ,  H01L21/02592 ,  H01L21/02691

    摘要： A semiconductor fabrication system and method are presented. A three dimensional multilayer integrated circuit fabrication method can include forming a first device layer and forming a second device layer on top of the first device layer with minimal detrimental heat transfer to the first layer by utilizing a controlled laser layer formation annealing process. A controlled laser crystallization process can be utilized and the controlled laser can include creating an amorphous layer; defining a crystallization area in the amorphous layer, where in the crystallization area is defined to promote single crystal growth (i.e. prevent multi-crystalline growth); and applying laser to the crystallization area, wherein the laser is applied in a manner that prevents undesired heat transfer to another layer.

    摘要翻译： 提出了半导体制造系统和方法。 三维多层集成电路制造方法可以包括通过利用受控激光层形成退火工艺形成第一器件层并在第一器件层顶部形成第二器件层，并以最小的有害热传递到第一层。 可以利用受控激光结晶过程，并且受控激光器可以包括产生非晶层; 限定非晶层中的结晶区域，其中结晶区域被限定为促进单晶生长（即防止多晶生长）; 以及将激光施加到结晶区域，其中以防止不希望的热传递到另一层的方式施加激光。

    Atomic layer deposition processes for non-volatile memory devices
    10.
    发明授权
    Atomic layer deposition processes for non-volatile memory devices 失效
    用于非易失性存储器件的原子层沉积工艺

    公开(公告)号：US08043907B2

    公开(公告)日：2011-10-25

    申请号：US12687732

    申请日：2010-01-14

    申请人： Yi Ma ,  Shreyas S. Kher ,  Khaled Ahmed ,  Tejal Goyani ,  Maitreyee Mahajani ,  Jallepally Ravi ,  Yi-Chiau Huang

    发明人： Yi Ma ,  Shreyas S. Kher ,  Khaled Ahmed ,  Tejal Goyani ,  Maitreyee Mahajani ,  Jallepally Ravi ,  Yi-Chiau Huang

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/7881

    摘要： Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer on the first polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a silicon nitride layer on the first silicon oxynitride layer, depositing a second silicon oxynitride layer on the silicon nitride layer, and depositing a second polysilicon layer on the second silicon oxynitride layer. In some examples, the first polysilicon layer is a floating gate and the second polysilicon layer is a control gate.

    摘要翻译： 本发明的实施例提供了用于形成这种存储器件的存储器件和方法。 在一个实施例中，提供了一种用于在衬底上制造非易失性存储器件的方法，其包括在衬底表面上沉积第一多晶硅层，在第一多晶硅层上沉积氧化硅层，在第一多晶硅层上沉积第一氧氮化硅层 氧化硅层，在第一氧氮化硅层上沉积氮化硅层，在氮化硅层上沉积第二氮氧化硅层，以及在第二氮氧化硅层上沉积第二多晶硅层。 在一些示例中，第一多晶硅层是浮置栅极，第二多晶硅层是控制栅极。