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10 条记录 (耗时 0.016 秒)

    Electrostatic capacity-type pressure sensor
    1.
    发明授权
    Electrostatic capacity-type pressure sensor 失效
    静电容量型压力传感器

    公开(公告)号：US5675086A

    公开(公告)日：1997-10-07

    申请号：US680173

    申请日：1996-07-15

    申请人： Takashi Kihara ,  Yoshiyuki Ishikura ,  Shigeo Kimura ,  Yasuhiro Goshoo

    发明人： Takashi Kihara ,  Yoshiyuki Ishikura ,  Shigeo Kimura ,  Yasuhiro Goshoo

    IPC分类号： G01L9/12 ,  G01L9/00 ,  G01L19/06

    CPC分类号： G01L9/0073 ,  G01L13/026

    摘要： An electrostatic capacity-type pressure sensor includes a diaphragm support body, first and second lids, a fixed electrode, a coupling member, an electrode support member, and a movable electrode. The diaphragm support body is formed into a tube shape. The first and second lids have thin diaphragm portions and thick fixing portions formed integrally with peripheral edge portions of the diaphragm portions and are arranged to face each other by bringing the fixing portions in tight contact with the two end portions of the diaphragm support body. The first and second lids separate the interior of the diaphragm support body from the outside by closing the two end portions of the diaphragm support body. The fixed electrode is formed on the inner surface of the fixing portion of at least one of the first and second lids. The coupling member has two ends respectively connected to the first and second lids to couple the diaphragm portions facing each other. The electrode support member is supported by the coupling member and arranged between the first and second lids at a predetermined interval. The movable electrode is formed on the electrode support member so as to face the fixed electrode. The movable electrode and the fixed electrodes are arranged parallel to each other at a predetermined interval to constitute a capacitor.

    摘要翻译： 静电电容型压力传感器包括隔膜支撑体，第一和第二盖，固定电极，联接构件，电极支撑构件和可动电极。 隔膜支撑体形成为管状。 第一和第二盖具有薄膜部分和与隔膜部分的周缘部分整体形成的厚的固定部分，并且通过使固定部分与隔膜支撑体的两个端部紧密接触而彼此相对地设置。 第一和第二盖通过关闭隔膜支撑体的两个端部将隔膜支撑体的内部从外部分开。 固定电极形成在第一和第二盖子中的至少一个的固定部分的内表面上。 联接构件具有分别连接到第一和第二盖的两个端部，以将彼此面对的隔膜部分联接。 电极支撑构件由联接构件支撑并且以预定间隔布置在第一和第二盖之间。 可动电极形成在电极支撑部件上，以面向固定电极。 可动电极和固定电极以预定间隔彼此平行地布置以构成电容器。

    Microchip device for chemotaxis observation
    3.
    发明授权
    Microchip device for chemotaxis observation 失效
    用于趋化性观察的Microchip器件

    公开(公告)号：US06808920B2

    公开(公告)日：2004-10-26

    申请号：US10352122

    申请日：2003-01-28

    申请人： Yasuhiro Goshoo ,  Takaaki Kuroiwa

    发明人： Yasuhiro Goshoo ,  Takaaki Kuroiwa

    IPC分类号： C12M134

    CPC分类号： C12Q1/6837

    摘要： A microchip device for chemotaxis observation according to the present invention is provided with the first well in which chemotactic factors are to be filled, and the second well in which chemotactic cells are to be filled. There is provided a channel between the first well and the second well. The channel has a plurality of paths. A sidewall surfaces of the path is substantially perpendicular to a bottom surface, as formed by anisotropic dry etching.

    摘要翻译： 根据本发明的用于趋化性观察的微芯片装置具有其中要填充趋化因子的第一个孔和其中要填充趋化细胞的第二个孔。 在第一井和第二井之间提供了一个通道。 信道具有多个路径。 路径的侧壁表面基本上垂直于通过各向异性干蚀刻形成的底表面。

    Semiconductor pressure sensor and its manufacturing method
    5.
    发明授权
    Semiconductor pressure sensor and its manufacturing method 有权
    半导体压力传感器及其制造方法

    公开(公告)号：US06619133B1

    公开(公告)日：2003-09-16

    申请号：US09622271

    申请日：2000-10-01

    申请人： Yasuhiro Goshoo ,  Hirofumi Toujou ,  Masayuki Yoneda ,  Takeshi Fukiura

    发明人： Yasuhiro Goshoo ,  Hirofumi Toujou ,  Masayuki Yoneda ,  Takeshi Fukiura

    IPC分类号： G01L904

    CPC分类号： G01L9/0042 ,  G01L9/0055

    摘要： That portion of an n-type single-crystal Si layer 1 which corresponds to a pressure-sensitive region is etched to an SiO2 layer 2 by using the SiO2 layer 2 as an etching stopper layer. The SiO2 layer 2 exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer 3 is etched by a predetermined amount to form a diaphragm 4. Thus, the SiO2 layer 2 is removed from the diaphragm 4 and a diaphragm edge portion 6.

    摘要翻译： 通过使用SiO 2层2作为蚀刻停止层，将对应于压敏区域的n型单晶Si层1的该部分蚀刻到SiO 2层2。 去除通过该蚀刻暴露的SiO 2层2。 n型单晶Si层3的压敏区域被蚀刻预定量以形成隔膜4.因此，SiO 2层2从膜片4和膜片边缘部分6中去除。