公开(公告)号：USRE41927E1

公开(公告)日：2010-11-16

申请号：US11433903

申请日：2006-05-11

Applicant: Woo-Suk Chung ,  Chang-Won Hwang

Inventor： Woo-Suk Chung ,  Chang-Won Hwang

IPC: G02F1/136

CPC classification number: G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2203/02 ,  H01L27/124 ,  H01L29/458

Abstract: In a TFT LCD device comprising a substrate, at least one thin film transistor formed on the substrate, having a source electrode and a drain electrode, an insulating layer formed over the whole surface of the substrate on which the thin film transistor is formed, having at least one contact hole exposing a portion of the drain electrode, and reflective layer pixel electrode corresponding to the thin film transistor, formed on the insulating layer to be connected with the drain electrode through the contact hole, the pixel electrode is formed of a multi-layered conductive layer. The drain electrode is composed of multiple layers, and the most upper layer of the multiple layers is one selected from a Cr layer and a MoW layer. Preferably, the multi-layered conductive layer is composed of two-layered conductive layer having a lower layer of the same material as that of the most upper layer and an upper layer of Al-containing metal.

Abstract translation: 在包括衬底的TFT LCD器件中，形成在衬底上的至少一个薄膜晶体管，具有源电极和漏极，在形成有薄膜晶体管的衬底的整个表面上形成的绝缘层，具有 至少一个露出漏电极的一部分的接触孔和与薄膜晶体管相对应的反射层像素电极，形成在绝缘层上，以通过接触孔与漏电极连接，像素电极由多 层导电层。 漏电极由多层组成，多层最上层是选自Cr层和MoW层。 优选地，多层导电层由具有与最上层相同材料的下层和含Al金属的上层的两层导电层组成。

公开(公告)号：US07791076B2

公开(公告)日：2010-09-07

申请号：US12469256

申请日：2009-05-20

Applicant: Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

Inventor： Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

IPC: H01L21/00

CPC classification number: H01L29/42384 ,  G02F1/13454 ,  G02F2202/104 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.

Abstract translation: 一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸 电路。 根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。 半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。 栅极绝缘层覆盖半导体图案。 在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。 在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸 并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。

公开(公告)号：US07596353B2

公开(公告)日：2009-09-29

申请号：US11085918

申请日：2005-03-21

Applicant: Woo-Suk Chung ,  Sung-Bong Kang ,  Jeon-Taek Im ,  Joong-Kyu Choi

Inventor： Woo-Suk Chung ,  Sung-Bong Kang ,  Jeon-Taek Im ,  Joong-Kyu Choi

IPC: H04B7/00

CPC classification number: H04W84/18

Abstract: The present invention provides a system with a plurality of Bluetooth dongles connected to a single host. Each dongle is connected to a different port on the host and each dongle can accommodate a piconet of up to seven Bluetooth devices. The host communicates with the Bluetooth devices via Bluetooth channels. The host includes an application layer, a Host Control Interface (HCI) layer and an interface device driver layer. An Interface Map Table (IMT) is stored in the host. The IMT associates each port on the host with the BD address of a particular Bluetooth dongle and with the channels associated with the particular dongle. The HCI layer and the Interface handler layer consult the IMT to direct commands and data to the correct port on the host.

Abstract translation: 本发明提供一种具有连接到单个主机的多个蓝牙加密狗的系统。 每个加密狗连接到主机上的不同端口，每个加密狗可以容纳多达七个蓝牙设备的微微网。 主机通过蓝牙通道与蓝牙设备进行通信。 主机包括应用层，主机控制接口（HCI）层和接口设备驱动层。 接口映射表（IMT）存储在主机中。 IMT将主机上的每个端口与特定蓝牙适配器的BD地址以及与特定加密狗相关联的通道关联。 HCI层和Interface处理器层参考IMT将命令和数据引导到主机上的正确端口。

公开(公告)号：US20070108447A1

公开(公告)日：2007-05-17

申请号：US11621277

申请日：2007-01-09

Applicant: Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

Inventor： Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

IPC: H01L29/76 ,  H01L29/10 ,  H01L31/036 ,  H01L31/112

CPC classification number: H01L29/42384 ,  G02F1/13454 ,  G02F2202/104 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.

Abstract translation: 本发明涉及薄膜晶体管和液晶显示器。 栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。 根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。 半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。 栅极绝缘层覆盖半导体图案。 在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。 在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以 方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

公开(公告)号：US07218371B2

公开(公告)日：2007-05-15

申请号：US11166010

申请日：2005-06-24

Applicant: Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

Inventor： Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

IPC: G02F1/1345 ,  G02F1/1343

CPC classification number: G02F1/133512 ,  G02F1/134336 ,  G02F1/1345 ,  G02F2001/133337 ,  G02F2001/133388 ,  G02F2001/133397 ,  G09G3/3648 ,  G09G2330/08 ,  G09G2330/10

Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.

Abstract translation: 在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线 和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向 位于周边区域中的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分处停止，并且筛选由杂质离子引起的图像缺陷区域 与黑色矩阵。

公开(公告)号：US06993917B2

公开(公告)日：2006-02-07

申请号：US10627714

申请日：2003-07-28

Applicant: Reuven Unger ,  Dong Gon Hwang ,  Woo Suk Chung

Inventor： Reuven Unger ,  Dong Gon Hwang ,  Woo Suk Chung

IPC: F25B9/14

CPC classification number: B23K1/0008 ,  B23K2101/04 ,  F25B9/14 ,  F25B2309/001

Abstract: A heat transfer member having an external heat transfer member including an insertion hole having an adaptor ring inserted thereinto, and at least one of a base blocking protrusion and a grove blocking protrusion formed on a predetermined portion of the surface of the base confronting the inserted adaptor ring inside the insertion groove, for increasing the coupling strength of the external radiating member and the adaptor ring and the transition member.

Abstract translation: 一种传热构件，具有外部传热构件，该外部传热构件包括插入有适配环的插入孔，以及形成在与插入的适配器相对的基座的表面的预定部分上的基部阻挡突起和凹槽阻挡突起中的至少一个 环形，用于增加外部散热构件和适配器环和过渡构件的联接强度。

公开(公告)号：US06822703B2

公开(公告)日：2004-11-23

申请号：US10128330

申请日：2002-04-24

Applicant: Chang-Won Hwang ,  Woo-Suk Chung ,  Tae-Hyeong Park ,  Hyun-Jae Kim ,  Gyu-Sun Moon ,  Sook-Young Kang

Inventor： Chang-Won Hwang ,  Woo-Suk Chung ,  Tae-Hyeong Park ,  Hyun-Jae Kim ,  Gyu-Sun Moon ,  Sook-Young Kang

IPC: G02F1136

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136236 ,  H01L27/1214

Abstract: A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. The TFT comprises an active pattern formed on a substrate, a gate insulating layer formed on the substrate including the active pattern, a gate line formed on the gate insulating layer to be crossed with the active pattern and including a gate electrode for defining the first impurity region, a second impurity region and a channel region, an insulating interlayer formed on the gate insulating layer including the gate line, a data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole which is formed through the gate insulating layer and the insulating interlayer on the second impurity region and a pixel electrode formed on the same insulating interlayer as the data line and connected with the first impurity region through a second contact hole which is formed through the gate insulating layer and the insulating interlayer on the first impurity region. The number of mask can be reduced to 5 or 6 sheets, thereby simplifying a manufacturing process.

Abstract translation: 公开了一种用于LCD的多晶硅TFT及其制造方法。 TFT包括形成在基板上的有源图案，形成在包括有源图案的基板上的栅极绝缘层，形成在栅极绝缘层上以与有源图案交叉的栅极线，并且包括用于限定第一杂质的栅电极 区域，第二杂质区域和沟道区域，在包括栅极线的栅极绝缘层上形成的绝缘夹层，形成在绝缘层间并通过第一接触孔连接到第二杂质区域的数据线，该第一接触孔通过 栅绝缘层和第二杂质区上的绝缘中间层，以及形成在与数据线相同的绝缘夹层上的像素电极，并通过第二接触孔与第一杂质区连接，第二接触孔通过栅极绝缘层和绝缘中间层 在第一杂质区域。 掩模的数量可以减少到5张或6张，从而简化制造过程。

公开(公告)号：US20050237466A1

公开(公告)日：2005-10-27

申请号：US11166010

申请日：2005-06-24

Applicant: Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

Inventor： Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362

CPC classification number: G02F1/133512 ,  G02F1/134336 ,  G02F1/1345 ,  G02F2001/133337 ,  G02F2001/133388 ,  G02F2001/133397 ,  G09G3/3648 ,  G09G2330/08 ,  G09G2330/10

Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.

公开(公告)号：US06927830B2

公开(公告)日：2005-08-09

申请号：US10178016

申请日：2002-06-20

Applicant: Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

Inventor： Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  G09G3/30 ,  G09G3/36

CPC classification number: G02F1/133512 ,  G02F1/134336 ,  G02F1/1345 ,  G02F2001/133337 ,  G02F2001/133388 ,  G02F2001/133397 ,  G09G3/3648 ,  G09G2330/08 ,  G09G2330/10

Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.

Abstract translation: 在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线 和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向 位于周边区域中的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分处停止，并且筛选由杂质离子引起的图像缺陷区域 与黑色矩阵。

公开(公告)号：US20050083445A1

公开(公告)日：2005-04-21

申请号：US10500514

申请日：2003-01-03

Applicant: Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

Inventor： Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

IPC: G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L29/15

CPC classification number: H01L29/42384 ,  G02F1/13454 ,  G02F2202/104 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.

Abstract translation: 本发明涉及薄膜晶体管和液晶显示器。 栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。 根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。 半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。 栅极绝缘层覆盖半导体图案。 在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。 在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以 方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。