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    Polysilicon thin film transistor array panel and manufacturing method thereof
    1.
    发明授权
    Polysilicon thin film transistor array panel and manufacturing method thereof 有权
    多晶硅薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US09005697B2

    公开(公告)日：2015-04-14

    申请号：US11866617

    申请日：2007-10-03

    Applicant: Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

    Inventor： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

    IPC: B05D7/00 ,  H01L27/12 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20

    CPC classification number: H01L21/02678 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T428/24273

    Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

    Abstract translation: 提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

    Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
    5.
    发明授权
    Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
    具有三部分栅电极的薄膜晶体管和使用其的液晶显示器

    公开(公告)号：US07791076B2

    公开(公告)日：2010-09-07

    申请号：US12469256

    申请日：2009-05-20

    Applicant: Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

    Inventor： Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

    IPC: H01L21/00

    CPC classification number: H01L29/42384 ,  G02F1/13454 ,  G02F2202/104 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

    Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.

    Abstract translation: 一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸 电路。 根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。 半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。 栅极绝缘层覆盖半导体图案。 在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。 在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸 并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。

    Array substrate, method of manufacturing the same and method of crystallizing silicon
    6.
    发明授权
    Array substrate, method of manufacturing the same and method of crystallizing silicon 有权
    阵列基板，其制造方法和硅结晶方法

    公开(公告)号：US07405464B2

    公开(公告)日：2008-07-29

    申请号：US11386630

    申请日：2006-03-22

    Applicant: Soong-Yong Joo ,  Myung-Koo Kang

    Inventor： Soong-Yong Joo ,  Myung-Koo Kang

    IPC: H01L29/00

    CPC classification number: H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

    Abstract: An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.

    Abstract translation: 阵列基板包括基底基板，开关元件和像素电极。 开关元件在基底基板上。 开关元件包括具有至少一个块的多晶硅图案。 在沿多个方向延伸的至少一个块中的每一个中形成谷粒。 像素电极电连接到开关元件。 因此，提高了开关元件的电流移动性和设计余量。

    MASK FOR FORMING POLYSILICON AND A METHOD FOR FABRICATING THIN FILM TRANSISTOR USING THE SAME
    7.
    发明申请
    MASK FOR FORMING POLYSILICON AND A METHOD FOR FABRICATING THIN FILM TRANSISTOR USING THE SAME 有权
    用于形成多晶硅的掩模和使用其制造薄膜晶体管的方法

    公开(公告)号：US20080166892A1

    公开(公告)日：2008-07-10

    申请号：US12016430

    申请日：2008-01-18

    Applicant: Myung-Koo Kang ,  Sook-Young Kang ,  Hyun-Jae Kim

    Inventor： Myung-Koo Kang ,  Sook-Young Kang ,  Hyun-Jae Kim

    IPC: H01L21/428

    CPC classification number: H01L21/0268 ,  H01L21/2026 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask

    Abstract translation: 提供了一种用于将非晶硅结晶成多晶硅的掩模。 掩模包括用于限定要被照射的区域的多个狭缝图案。 沿着纵向第一方向形成多个狭缝图案，并且掩模沿纵向第二方向移动。 第一纵向方向基本上垂直于第二纵向方向。 每个分割图案与另一个分开的图案偏离大致相同的距离。 因此，使用掩模的多晶硅

    Device for irradiating a laser beam
    8.
    发明申请
    Device for irradiating a laser beam 有权
    用于照射激光束的装置

    公开(公告)号：US20080070386A1

    公开(公告)日：2008-03-20

    申请号：US11983103

    申请日：2007-11-06

    Applicant: Hyun-Jae Kim ,  Myung-Koo Kang

    Inventor： Hyun-Jae Kim ,  Myung-Koo Kang

    IPC: H01L21/20

    CPC classification number: H01L27/1285 ,  B23K26/02 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

    Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

    Abstract translation: 用于将激光束照射到形成在基板上的非晶硅薄膜上的装置。 该装置包括：安装基板的台架; 用于产生激光束的激光振荡器; 用于将激光束聚焦并引导到薄膜上的投影透镜; 用于反射引导到薄膜上的激光束的反射器; 用于控制所述反射器的位置的控制器; 以及用于吸收由反射器反射的激光束的吸收体。

    Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other
    9.
    发明授权
    Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other 有权
    使用该掩模制造薄膜晶体管的方法，用于形成包括彼此偏离的狭缝图案的多晶硅

    公开(公告)号：US07335541B2

    公开(公告)日：2008-02-26

    申请号：US10854664

    申请日：2004-05-26

    Applicant: Myung-Koo Kang ,  Sook-Young Kang ,  Hyun-Jae Kim

    Inventor： Myung-Koo Kang ,  Sook-Young Kang ,  Hyun-Jae Kim

    IPC: H01L21/00

    CPC classification number: H01L21/0268 ,  H01L21/2026 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask are grown to be isotropic with respect to the horizontal and vertical directions.

    Abstract translation: 提供了一种用于将非晶硅结晶成多晶硅的掩模。 掩模包括用于限定要被照明的区域的多个狭缝图案。 沿着纵向第一方向形成多个狭缝图案，并且掩模沿纵向第二方向移动。 第一纵向方向基本上垂直于第二纵向方向。 每个分割图案与另一个分开的图案偏离大致相同的距离。 因此，使用掩模的多晶硅生长成相对于水平和垂直方向各向同性。

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