公开(公告)号：US20100178879A1

公开(公告)日：2010-07-15

申请号：US12730310

申请日：2010-03-24

申请人： Yusuke Sato ,  Nobuyoshi Maejima ,  Tomoaki Kudaishi ,  Shinji Moriyama ,  Naoki Kuroda ,  Ryota Sato ,  Masashi Okano

发明人： Yusuke Sato ,  Nobuyoshi Maejima ,  Tomoaki Kudaishi ,  Shinji Moriyama ,  Naoki Kuroda ,  Ryota Sato ,  Masashi Okano

IPC分类号： H04B1/04

CPC分类号： H03F3/195 ,  H01L2224/05554 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/451 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。

公开(公告)号：US20060261494A1

公开(公告)日：2006-11-23

申请号：US11492165

申请日：2006-07-25

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

IPC分类号： H01L23/48

CPC分类号： H01L24/50 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49572 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/50 ,  H01L2224/85951 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor device includes a semiconductor chip formed with connection terminals, an elastic structure interposed between a main surface of the chip and a wiring substrate formed with wirings connected at first ends thereof to the connection terminals, and bump electrodes connected to the other ends of the wirings. The connection terminals may be at a center part or in peripheral part(s) of the chip main surface and both the elastic structure and wiring substrate are not provided at locations of connection terminals. A resin body seals at least the connection terminals and the exposed first ends of wirings (leads). In a scheme in which the connection terminals are located in a peripheral part of the chip main surface, the wiring substrate protrudes beyond the chip boundary where the connection terminals are arranged, and the resin body shape is restricted by the protruding part of the wiring substrate.

摘要翻译： 半导体器件包括形成有连接端子的半导体芯片，插入在芯片的主表面之间的弹性结构和形成有连接到连接端子的布线的布线基板，以及连接到连接端子的另一端的凸起电极 布线。 连接端子可以在芯片主表面的中心部分或周边部分，并且弹性结构和布线基板都不设置在连接端子的位置处。 树脂体至少密封连接端子和暴露的布线的第一端（引线）。 在连接端子位于芯片主表面的周边部分的方案中，布线基板突出超过布置有连接端子的芯片边界，并且树脂体形状被布线基板的突出部分限制 。

公开(公告)号：US06670215B2

公开(公告)日：2003-12-30

申请号：US10058319

申请日：2002-01-30

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

IPC分类号： H01L2144

CPC分类号： H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/50 ,  H01L2224/73215 ,  H01L2224/85951 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T29/4913 ,  Y10T29/49169 ,  H01L2924/20753 ,  H01L2224/05599

摘要： A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

公开(公告)号：US06639323B2

公开(公告)日：2003-10-28

申请号：US09983286

申请日：2001-10-23

申请人： Yukiharu Akiyama ,  Tomoaki Kudaishi ,  Takehiro Ohnishi ,  Noriou Shimada ,  Shuji Eguchi ,  Asao Nishimura ,  Ichiro Anjo ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Hiroshi Koyama ,  Masanori Shibamoto ,  Akira Nagai ,  Masahiko Ogino

发明人： Yukiharu Akiyama ,  Tomoaki Kudaishi ,  Takehiro Ohnishi ,  Noriou Shimada ,  Shuji Eguchi ,  Asao Nishimura ,  Ichiro Anjo ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Hiroshi Koyama ,  Masanori Shibamoto ,  Akira Nagai ,  Masahiko Ogino

IPC分类号： H01L2348

CPC分类号： H01L24/50 ,  H01L23/3114 ,  H01L23/49572 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/1433 ,  H01L2924/3025

摘要： A semiconductor device including a semiconductor chip having connection terminals in a peripheral part of a main surface thereof; an elastic body disposed on the main surface leaving the connection terminals exposed; an insulating tape formed on the elastic body and having openings in areas where the connection terminals are situated; plural leads formed on the top surface of the insulating tape, one end of each lead being connected to one of the connection terminals and the other end being disposed on the elastic body; plural bump electrodes formed on the other ends of the plural leads; and a resin body for sealing the connection terminals and one end of each of the leads, wherein the insulating tape protrudes beyond the chip where the plural connection terminals are arranged, and wherein the shape of the resin body is restricted by the protruding part of the insulating tape.

公开(公告)号：US07223636B2

公开(公告)日：2007-05-29

申请号：US10961041

申请日：2004-10-12

申请人： Yoshihiko Kobayashi ,  Susumu Sato ,  Koki Tanimoto ,  Tomio Yamada ,  Hirokazu Nakajima ,  Tomoaki Kudaishi ,  Yoshinori Shiokawa ,  Toshiharu Niitsu ,  Tsutomu Ida

发明人： Yoshihiko Kobayashi ,  Susumu Sato ,  Koki Tanimoto ,  Tomio Yamada ,  Hirokazu Nakajima ,  Tomoaki Kudaishi ,  Yoshinori Shiokawa ,  Toshiharu Niitsu ,  Tsutomu Ida

IPC分类号： H01L21/44

CPC分类号： H05K3/0052 ,  H01L21/481 ,  H01L2224/48227 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/284 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/302 ,  H01L2924/00012

摘要： In a dividing method according to the present invention, a wiring board formed of ceramic is forced up (upper swing) by a lower clamp claw of a clamper, and some of a protruded wiring board portion protruding from a conveying chute is pressed against a support body to perform a first division under bending stress. Thereafter, the upward-located clamper is rotatably swung (lower swing) downward to allow an upper clamp claw to press down the protruded wiring board portion, thereby performing a reverse division at the first division section again as a second division. Since the second division allows a tensile force to act on a remaining and thin non-divided resin portion, the non-divided resin portion is torn off. Thus, the perfect division is enabled. Fractionalizing is done by a one-row division and an individual division so that each semiconductor device is formed.

公开(公告)号：US06472727B2

公开(公告)日：2002-10-29

申请号：US09771648

申请日：2001-01-30

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

IPC分类号： H01L23495

CPC分类号： H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/50 ,  H01L2224/73215 ,  H01L2224/85951 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T29/4913 ,  Y10T29/49169 ,  H01L2924/20753 ,  H01L2224/05599

摘要： A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

公开(公告)号：US06353255B2

公开(公告)日：2002-03-05

申请号：US09764378

申请日：2001-01-19

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

IPC分类号： H01L23435

CPC分类号： H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/50 ,  H01L2224/73215 ,  H01L2224/85951 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T29/4913 ,  Y10T29/49169 ,  H01L2924/20753 ,  H01L2224/05599

摘要： A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

公开(公告)号：US06342726B2

公开(公告)日：2002-01-29

申请号：US09449834

申请日：1999-11-26

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

IPC分类号： H01L23495

CPC分类号： H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/50 ,  H01L2224/73215 ,  H01L2224/85951 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T29/4913 ,  Y10T29/49169 ,  H01L2924/20753 ,  H01L2224/05599

摘要： A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

公开(公告)号：US07706756B2

公开(公告)日：2010-04-27

申请号：US11626485

申请日：2007-01-24

申请人： Yusuke Sato ,  Nobuyoshi Maejima ,  Tomoaki Kudaishi ,  Shinji Moriyama ,  Naoki Kuroda ,  Ryota Sato ,  Masashi Okano

发明人： Yusuke Sato ,  Nobuyoshi Maejima ,  Tomoaki Kudaishi ,  Shinji Moriyama ,  Naoki Kuroda ,  Ryota Sato ,  Masashi Okano

IPC分类号： H04B1/44 ,  H04Q7/20

CPC分类号： H03F3/195 ,  H01L2224/05554 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/451 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。

公开(公告)号：US20070210866A1

公开(公告)日：2007-09-13

申请号：US11626485

申请日：2007-01-24

申请人： Yusuke Sato ,  Nobuyoshi Maejima ,  Tomoaki Kudaishi ,  Shinji Moriyama ,  Naoki Kuroda ,  Ryota Sato ,  Masashi Okano

发明人： Yusuke Sato ,  Nobuyoshi Maejima ,  Tomoaki Kudaishi ,  Shinji Moriyama ,  Naoki Kuroda ,  Ryota Sato ,  Masashi Okano

IPC分类号： H03F3/68

CPC分类号： H03F3/195 ,  H01L2224/05554 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/451 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。