公开(公告)号：US20090235639A1

公开(公告)日：2009-09-24

申请号：US12200265

申请日：2008-08-28

申请人： Tatsuya KIMURA ,  Yoshihiro KAWAMATA ,  Kenichi NIU

发明人： Tatsuya KIMURA ,  Yoshihiro KAWAMATA ,  Kenichi NIU

IPC分类号： F02K9/08

CPC分类号： F02K1/38 ,  F02K9/48 ,  F02K9/58 ,  F02K9/82 ,  F02K9/972 ,  F05D2250/713

摘要： A rocket nozzle includes a dual-bell nozzle and a gas introducing section configured to introduce gas into space surrounded by the dual-bell nozzle. Combustion gas flows in the space. The dual-bell nozzle includes a first stage nozzle bell-shaped and surrounding an upstream portion of the space, and a second stage nozzle bell-shaped and surrounding a downstream portion of the space. The dual-bell nozzle has an inflection point between the first stage nozzle and the second stage nozzle. The gas introducing section includes a gas inlet provided to an inner wall surface of the first stage nozzle. The gas is introduced into the space from the gas inlet.

摘要翻译： 火箭喷嘴包括双钟形喷嘴和构造成将气体引入由双钟形喷嘴包围的空间中的气体导入部。 燃烧气体在空间中流动。 双钟形喷嘴包括钟形状的第一级喷嘴并且围绕该空间的上游部分，以及第二级喷嘴钟形并围绕该空间的下游部分。 双钟形喷嘴在第一级喷嘴和第二级喷嘴之间具有拐点。 气体导入部包括设置在第一级喷嘴的内壁面的气体入口。 气体从气体入口引入空间。

公开(公告)号：US20080048352A1

公开(公告)日：2008-02-28

申请号：US11976233

申请日：2007-10-23

申请人： Hisao Nakamura ,  Yoshihiko Kanda ,  Tatsuya Kimura

发明人： Hisao Nakamura ,  Yoshihiko Kanda ,  Tatsuya Kimura

IPC分类号： C08J9/14

CPC分类号： C08J9/143 ,  B29C48/022 ,  B29C48/07 ,  B29K2025/00 ,  B29K2105/04 ,  C08J9/141 ,  C08J2201/03 ,  C08J2325/06

摘要： A method to manufacture an extruded polystyrene resin foam includes the steps for heating and mixing a nucleating agent, a fire retardant, a polystyrene resin and a physical blowing agent except chlorofluorohydrocarbons together within an extruder to prepare a polystyrene resin melt; introducing the resin melt to a die having a cooling member therein and constructed so that a molten resin flow channel within the die is broad in a vertical direction but narrows abruptly near a die orifice ;and discharging the polystyrene resin melt from the die orifice into a guider attached to a top of the die and causing it to expand within the guider. The extruded foam has an apparent density of 0.015 to 0.06 g/cm3.

摘要翻译： 制造挤出聚苯乙烯树脂发泡体的方法包括在挤出机内将成核剂，阻燃剂，聚苯乙烯树脂和除了氟氯烃外的物理发泡剂加热混合以制备聚苯乙烯树脂熔融物的步骤; 将树脂熔体引入到其中具有冷却构件的模具中，并且构造成使得模具内的熔融树脂流动通道在垂直方向上宽，但在模孔附近突然变窄;并且将聚苯乙烯树脂熔体从模孔排出到 导杆附着在模具的顶部并使其在导向器内扩展。 挤出的泡沫体的表观密度为0.015至0.06g / cm 3。

公开(公告)号：US5912475A

公开(公告)日：1999-06-15

申请号：US767924

申请日：1996-12-17

申请人： Takushi Itagaki ,  Daisuke Suzuki ,  Tatsuya Kimura

发明人： Takushi Itagaki ,  Daisuke Suzuki ,  Tatsuya Kimura

IPC分类号： G02F1/025 ,  H01S5/00 ,  H01S5/0625 ,  H01L33/00

CPC分类号： H01S5/06258

摘要： An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.

摘要翻译： 光学半导体器件包括具有顶表面和底表面的n型InP衬底; 包括n型包覆层，多量子阱层和设置在衬底的顶表面上的p型第一上包层的条状台面结构; 半绝缘材料的第一层，载流子浓度等于或小于4×10 18 cm -3且大于1×10 18 cm -3的n型InP空穴阻挡层和设置在所述半绝缘材料上的第二层 埋葬台面结构; 设置在半绝缘材料的台面结构和第二层上的第二p型覆层和p型接触层，以及在台面结构的条带方向上彼此隔开的p侧电极，设置在 p型接触层; 以及设置在基板的底面上的n侧电极。 因此，可获得具有优异的元件隔离特性和宽调制带宽的光学半导体器件，并且能够使各个元件以最大的性能进行操作。

公开(公告)号：US5166082A

公开(公告)日：1992-11-24

申请号：US712713

申请日：1991-06-10

申请人： Takaharu Nakamura ,  Toshikazu Kuroda ,  Tatsuya Kimura

发明人： Takaharu Nakamura ,  Toshikazu Kuroda ,  Tatsuya Kimura

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

CPC分类号： H01L21/8249 ,  H01L21/761 ,  H01L21/76221 ,  H01L27/0623 ,  Y10S148/008 ,  Y10S148/009

摘要： This invention provides devices each of which has at least one bipolar transistor and at least one MOS transistor, both formed on a substrate. This invention also provides their fabrication process. Each device is constructed of epitaxial layers of a first and second conductivity types, surfaces of said epitaxial layers being partly exposed, at least one MOS transistor formed in the epitaxial layer of the first conductivity type, and at least one bipolar transistor formed in the epitaxial layer of the second conductivity type. Its fabrication process comprises the steps of forming the epitaxial layer of the second conductivity type on the semiconductor substrate, forming the epitaxial layer of the first conductivity type on a part of the epitaxial layer of the second conductivity type, forming the bipolar transistor in the epitaxial layer of the second conductivity type and then forming the MOS transistor in the epitaxial layer of the first conductivity type.

摘要翻译： 本发明提供了各自具有形成在基板上的至少一个双极晶体管和至少一个MOS晶体管的器件。 本发明还提供了它们的制造方法。 每个器件由第一和第二导电类型的外延层构成，所述外延层的表面部分暴露，形成在第一导电类型的外延层中的至少一个MOS晶体管和形成在外延层中的至少一个双极晶体管 第二导电类型的层。 其制造方法包括以下步骤：在半导体衬底上形成第二导电类型的外延层，在第二导电类型的外延层的一部分上形成第一导电类型的外延层，在外延层中形成双极晶体管 层，然后在第一导电类型的外延层中形成MOS晶体管。

公开(公告)号：US4204745A

公开(公告)日：1980-05-27

申请号：US914548

申请日：1978-06-12

申请人： Junichi Sakai ,  Tatsuya Kimura

发明人： Junichi Sakai ,  Tatsuya Kimura

IPC分类号： G02B6/00 ,  C03B37/018 ,  G02B6/028 ,  G02B5/14

CPC分类号： G02B6/0288 ,  C03B37/018 ,  C03B2203/26

摘要： In a graded index optical fiber whose refractive index distribution (n) at the radial length r is given by ##EQU1## where (n.sub.0) is the refractive index at the core axis, (a) is the core radius, .alpha. is a power exponent, n.sub.e is the refractive index of the cladding, and .DELTA.=(n.sub.0 -n.sub.e)/n.sub.0, said exponent .alpha. and the normalized frequency v (=(2.pi.an.sub.0 /.lambda.).sqroot.2.DELTA., .lambda. is the wavelength) are determined so that the group delay of the fundamental mode is equal to that of the first higher order mode. In particular, the value of .alpha. is determined in the range 3.2.ltoreq..alpha..ltoreq.6.0. Thus, the optical fiber with both a broad bandwidth and a large core diameter can be provided. A large core diameter optical fiber facilitates the connection or the splicing of two optical fibers.

摘要翻译： 在径向长度为r的折射率分布（n）由给出的渐变折射率光纤中，其中（n0）是芯轴处的折射率，（a）是芯径，α是幂指数 ，ne是包层的折射率，并且DELTA =（n0-ne）/ n0，所述指数α和归一化频率v（=（2 pi an0 /λ）2ROOT 2 DELTA，λ是波长）被确定为 基本模式的组延迟等于第一个高阶模式的组延迟。 特别地，α的值在3.2≤3.0范围内确定。 因此，可以提供宽带宽和大直径的光纤。 大的芯径光纤有助于两根光纤的连接或拼接。

公开(公告)号：US4142200A

公开(公告)日：1979-02-27

申请号：US734182

申请日：1976-10-20

申请人： Yoshihiko Mizushima ,  Kenji Kajiyama ,  Tatsuya Kimura ,  Hiroshi Kanbe

发明人： Yoshihiko Mizushima ,  Kenji Kajiyama ,  Tatsuya Kimura ,  Hiroshi Kanbe

IPC分类号： H01L31/107 ,  H01L27/14

CPC分类号： H01L31/107

摘要： The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.

摘要翻译： 改变多层结二极管的层的杂质浓度分布，使得在第二区域中与第一区域邻接的第一区域中的浓度较低，第三区域中的浓度较低，并且最后区域中的浓度分布逐渐增加 远离交界处的方向。

公开(公告)号：US20060083279A1

公开(公告)日：2006-04-20

申请号：US11142438

申请日：2005-06-02

申请人： Tatsuya Kimura ,  Kenichi Ono

发明人： Tatsuya Kimura ,  Kenichi Ono

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/34326

摘要： A semiconductor laser in which six layers are grown on one another, over an Si—GaAs substrate, in the following order: an Si—GaAs buffer layer, an Si—AlGaInP cladding layer, an active layer, an Mg—AlGaInP cladding layer, an Mg—AlGaInP band discontinuity reduction layer, and a Zn—GaAs contact layer. In this configuration, the carrier concentration of the Si—GaAs substrate may be from 1×1017 cm−3 to 7×1017 cm−3 to reduce the number of atoms diffusing from the Si—GaAs substrate into the active layer and so the active layer of the semiconductor laser has good light emission characteristics.

摘要翻译： 在Si-GaAs衬底上依次生长六层的半导体激光器：Si-GaAs缓冲层，Si-AlGaInP包覆层，有源层，Mg-AlGaInP包覆层， Mg-AlGaInP带不连续还原层和Zn-GaAs接触层。 在这种配置中，Si-GaAs衬底的载流子浓度可以为1×10 -3 -3至7×10 17 cm -3， 3以减少从Si-GaAs衬底扩散到有源层中的原子数，因此半导体激光器的有源层具有良好的发光特性。

公开(公告)号：US06802223B2

公开(公告)日：2004-10-12

申请号：US10669565

申请日：2003-09-25

申请人： Hiroshi Nakatani ,  Tatsuya Kimura ,  Yoshito Sameda ,  Takuya Iijima ,  Takashi Higuchi ,  Makoto Futoo ,  Hiroaki Nojiri ,  Kiyonori Nishikawa ,  Toshihiko Okamoto

发明人： Hiroshi Nakatani ,  Tatsuya Kimura ,  Yoshito Sameda ,  Takuya Iijima ,  Takashi Higuchi ,  Makoto Futoo ,  Hiroaki Nojiri ,  Kiyonori Nishikawa ,  Toshihiko Okamoto

IPC分类号： G01F158

CPC分类号： G01F1/584 ,  G01F1/586

摘要： The invention consists in a capacitative electromagnetic flow meter in which excitation is performed at a frequency above the commercially available frequency and having a characteristic correction filter that corrects the gain frequency characteristic of the exciting current such that the exciting flux waveform has a flat section. In the detection unit, the value of the electrostatic capacitance between the face electrodes 4A, 4B and guard electrodes 5A, 5B is made smaller than the value of the electrostatic capacitance between the detecting face electrodes 4A, 4B and the fluid to be measured. The exciting coils are fixed to a cylindrical yoke, being electrostatically screened by coil fixing plates. Fixing by an earth ring is performed with this cylindrical yoke and the two ends of the measurement tube being symmetrical with respect to the tube axis and electrode axes. In addition, fixing is effected by filling the entire interior of the detection unit with epoxy resin.

摘要翻译： 本发明是一种电容式电磁流量计，其中以高于市售频率的频率进行激励，并且具有校正激励电流的增益频率特性的特征校正滤波器，使得激励磁通波形具有平坦部分。 在检测单元中，使面电极4A，4B与保护电极5A，5B之间的静电电容值小于检测面电极4A，4B与待测流体之间的静电电容值。 励磁线圈固定到圆柱形轭，由线圈固定板静电屏蔽。 用该圆柱形磁轭进行固定，测量管的两端相对于管轴和电极轴对称。 此外，通过用环氧树脂填充检测单元的整个内部来实现固定。

公开(公告)号：US06787236B2

公开(公告)日：2004-09-07

申请号：US10192707

申请日：2002-07-11

申请人： Tatsuya Kimura ,  Yutaka Onozawa ,  Tomoo Ohrui ,  Toshio Sugizaki

发明人： Tatsuya Kimura ,  Yutaka Onozawa ,  Tomoo Ohrui ,  Toshio Sugizaki

IPC分类号： B32B2736

CPC分类号： C09D183/04 ,  C08J7/04 ,  C08J7/047 ,  C08J2369/00 ,  C08J2469/00 ,  C09J7/29 ,  C09J2469/006 ,  Y10T428/24355 ,  Y10T428/24372 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/259 ,  Y10T428/31507

摘要： Provided is a hard coat film which has an inorganic hard coat layer having excellent scratch resistance and weatherability and inhibited from generation of curling and which is particularly suited for sticking on outside faces of window glasses in lofty buildings. The hard coat film is prepared by laminating in order a primer layer and a hard coat layer comprising metal oxide particles and a cured matter of a silane compound on one face of a base material and further providing, if necessary, a coating layer having various functions on the above hard coat layer.

摘要翻译： 提供一种硬涂膜，其具有耐刮擦性和耐候性优异的无机硬涂层，并且抑制了卷曲的产生，并且特别适用于粘在高层建筑物中的窗玻璃的外表面上。 硬涂膜通过在基材的一个面上层叠底漆层和包含金属氧化物颗粒的硬涂层和硅烷化合物的固化物而制备，并且如果需要，还需要具有各种功能的涂层 在上述硬涂层上。

公开(公告)号：US5814534A

公开(公告)日：1998-09-29

申请号：US510695

申请日：1995-08-03

申请人： Tatsuya Kimura ,  Takao Ishida

发明人： Tatsuya Kimura ,  Takao Ishida

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/30 ,  H01S5/30 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/305 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02658 ,  H01S5/3235 ,  H01S2304/04 ,  H01S5/3054 ,  H01S5/32391

摘要： In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP).sub.2 Be is employed as a dopant source. Since (MeCP).sub.2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP).sub.2 Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized.

摘要翻译： 在掺杂铍的方法中，当外延生长III-V族化合物半导体时，使用（MeCP）2Be作为掺杂剂源。 由于（MeCP）2Be具有比二乙基苯（DEBe）低的蒸汽压，因此通常用作掺杂剂源掺杂控制。 此外，由于容易获得比DEBe高的纯度（MeCP）2Be，因此在掺杂期间不会在有源层中引入氧等杂质，能够实现高质量的p型层。