公开(公告)号：US5679603A

公开(公告)日：1997-10-21

申请号：US386804

申请日：1995-02-06

申请人： Tatsuya Kimura ,  Takao Ishida ,  Takuji Sonoda

发明人： Tatsuya Kimura ,  Takao Ishida ,  Takuji Sonoda

IPC分类号： H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/917

摘要： A high resistance compound semiconductor layer included in a semiconductor device including a plurality of compound semiconductor layers having different compositions includes a compound semiconductor that is vapor phase grown employing an organic metal compound including In, an organic metal compound including Al, and a hydrogenated compound or an organic metal compound including As. The high resistance compound semiconductor layer includes p type impurities having a concentration that positions the Fermi level of the compound semiconductor approximately at the center of the band gap of the compound semiconductor. Therefore, it is possible to produce a high resistance AlInAs layer that has less impurities that are diffused into an adjacent compound semiconductor layer.

摘要翻译： 包括在具有不同组成的多个化合物半导体层的半导体器件中的高电阻化合物半导体层包括使用包含In的有机金属化合物，包含Al的有机金属化合物和氢化化合物进行气相生长的化合物半导体，或 包含As的有机金属化合物。 高电阻化合物半导体层包括具有将化合物半导体的费米能级大致位于化合物半导体的带隙的中心的浓度的p型杂质。 因此，可以生产具有较少杂质扩散到相邻化合物半导体层中的高电阻AlInAs层。

公开(公告)号：US5814534A

公开(公告)日：1998-09-29

申请号：US510695

申请日：1995-08-03

申请人： Tatsuya Kimura ,  Takao Ishida

发明人： Tatsuya Kimura ,  Takao Ishida

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/30 ,  H01S5/30 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/305 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02658 ,  H01S5/3235 ,  H01S2304/04 ,  H01S5/3054 ,  H01S5/32391

摘要： In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP).sub.2 Be is employed as a dopant source. Since (MeCP).sub.2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP).sub.2 Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized.

摘要翻译： 在掺杂铍的方法中，当外延生长III-V族化合物半导体时，使用（MeCP）2Be作为掺杂剂源。 由于（MeCP）2Be具有比二乙基苯（DEBe）低的蒸汽压，因此通常用作掺杂剂源掺杂控制。 此外，由于容易获得比DEBe高的纯度（MeCP）2Be，因此在掺杂期间不会在有源层中引入氧等杂质，能够实现高质量的p型层。

公开(公告)号：US20080048352A1

公开(公告)日：2008-02-28

申请号：US11976233

申请日：2007-10-23

申请人： Hisao Nakamura ,  Yoshihiko Kanda ,  Tatsuya Kimura

发明人： Hisao Nakamura ,  Yoshihiko Kanda ,  Tatsuya Kimura

IPC分类号： C08J9/14

CPC分类号： C08J9/143 ,  B29C48/022 ,  B29C48/07 ,  B29K2025/00 ,  B29K2105/04 ,  C08J9/141 ,  C08J2201/03 ,  C08J2325/06

摘要： A method to manufacture an extruded polystyrene resin foam includes the steps for heating and mixing a nucleating agent, a fire retardant, a polystyrene resin and a physical blowing agent except chlorofluorohydrocarbons together within an extruder to prepare a polystyrene resin melt; introducing the resin melt to a die having a cooling member therein and constructed so that a molten resin flow channel within the die is broad in a vertical direction but narrows abruptly near a die orifice ;and discharging the polystyrene resin melt from the die orifice into a guider attached to a top of the die and causing it to expand within the guider. The extruded foam has an apparent density of 0.015 to 0.06 g/cm3.

摘要翻译： 制造挤出聚苯乙烯树脂发泡体的方法包括在挤出机内将成核剂，阻燃剂，聚苯乙烯树脂和除了氟氯烃外的物理发泡剂加热混合以制备聚苯乙烯树脂熔融物的步骤; 将树脂熔体引入到其中具有冷却构件的模具中，并且构造成使得模具内的熔融树脂流动通道在垂直方向上宽，但在模孔附近突然变窄;并且将聚苯乙烯树脂熔体从模孔排出到 导杆附着在模具的顶部并使其在导向器内扩展。 挤出的泡沫体的表观密度为0.015至0.06g / cm 3。

公开(公告)号：US5912475A

公开(公告)日：1999-06-15

申请号：US767924

申请日：1996-12-17

申请人： Takushi Itagaki ,  Daisuke Suzuki ,  Tatsuya Kimura

发明人： Takushi Itagaki ,  Daisuke Suzuki ,  Tatsuya Kimura

IPC分类号： G02F1/025 ,  H01S5/00 ,  H01S5/0625 ,  H01L33/00

CPC分类号： H01S5/06258

摘要： An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.

摘要翻译： 光学半导体器件包括具有顶表面和底表面的n型InP衬底; 包括n型包覆层，多量子阱层和设置在衬底的顶表面上的p型第一上包层的条状台面结构; 半绝缘材料的第一层，载流子浓度等于或小于4×10 18 cm -3且大于1×10 18 cm -3的n型InP空穴阻挡层和设置在所述半绝缘材料上的第二层 埋葬台面结构; 设置在半绝缘材料的台面结构和第二层上的第二p型覆层和p型接触层，以及在台面结构的条带方向上彼此隔开的p侧电极，设置在 p型接触层; 以及设置在基板的底面上的n侧电极。 因此，可获得具有优异的元件隔离特性和宽调制带宽的光学半导体器件，并且能够使各个元件以最大的性能进行操作。

公开(公告)号：US5166082A

公开(公告)日：1992-11-24

申请号：US712713

申请日：1991-06-10

申请人： Takaharu Nakamura ,  Toshikazu Kuroda ,  Tatsuya Kimura

发明人： Takaharu Nakamura ,  Toshikazu Kuroda ,  Tatsuya Kimura

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

CPC分类号： H01L21/8249 ,  H01L21/761 ,  H01L21/76221 ,  H01L27/0623 ,  Y10S148/008 ,  Y10S148/009

摘要： This invention provides devices each of which has at least one bipolar transistor and at least one MOS transistor, both formed on a substrate. This invention also provides their fabrication process. Each device is constructed of epitaxial layers of a first and second conductivity types, surfaces of said epitaxial layers being partly exposed, at least one MOS transistor formed in the epitaxial layer of the first conductivity type, and at least one bipolar transistor formed in the epitaxial layer of the second conductivity type. Its fabrication process comprises the steps of forming the epitaxial layer of the second conductivity type on the semiconductor substrate, forming the epitaxial layer of the first conductivity type on a part of the epitaxial layer of the second conductivity type, forming the bipolar transistor in the epitaxial layer of the second conductivity type and then forming the MOS transistor in the epitaxial layer of the first conductivity type.

摘要翻译： 本发明提供了各自具有形成在基板上的至少一个双极晶体管和至少一个MOS晶体管的器件。 本发明还提供了它们的制造方法。 每个器件由第一和第二导电类型的外延层构成，所述外延层的表面部分暴露，形成在第一导电类型的外延层中的至少一个MOS晶体管和形成在外延层中的至少一个双极晶体管 第二导电类型的层。 其制造方法包括以下步骤：在半导体衬底上形成第二导电类型的外延层，在第二导电类型的外延层的一部分上形成第一导电类型的外延层，在外延层中形成双极晶体管 层，然后在第一导电类型的外延层中形成MOS晶体管。

公开(公告)号：US4204745A

公开(公告)日：1980-05-27

申请号：US914548

申请日：1978-06-12

申请人： Junichi Sakai ,  Tatsuya Kimura

发明人： Junichi Sakai ,  Tatsuya Kimura

IPC分类号： G02B6/00 ,  C03B37/018 ,  G02B6/028 ,  G02B5/14

CPC分类号： G02B6/0288 ,  C03B37/018 ,  C03B2203/26

摘要： In a graded index optical fiber whose refractive index distribution (n) at the radial length r is given by ##EQU1## where (n.sub.0) is the refractive index at the core axis, (a) is the core radius, .alpha. is a power exponent, n.sub.e is the refractive index of the cladding, and .DELTA.=(n.sub.0 -n.sub.e)/n.sub.0, said exponent .alpha. and the normalized frequency v (=(2.pi.an.sub.0 /.lambda.).sqroot.2.DELTA., .lambda. is the wavelength) are determined so that the group delay of the fundamental mode is equal to that of the first higher order mode. In particular, the value of .alpha. is determined in the range 3.2.ltoreq..alpha..ltoreq.6.0. Thus, the optical fiber with both a broad bandwidth and a large core diameter can be provided. A large core diameter optical fiber facilitates the connection or the splicing of two optical fibers.

摘要翻译： 在径向长度为r的折射率分布（n）由给出的渐变折射率光纤中，其中（n0）是芯轴处的折射率，（a）是芯径，α是幂指数 ，ne是包层的折射率，并且DELTA =（n0-ne）/ n0，所述指数α和归一化频率v（=（2 pi an0 /λ）2ROOT 2 DELTA，λ是波长）被确定为 基本模式的组延迟等于第一个高阶模式的组延迟。 特别地，α的值在3.2≤3.0范围内确定。 因此，可以提供宽带宽和大直径的光纤。 大的芯径光纤有助于两根光纤的连接或拼接。

公开(公告)号：US4142200A

公开(公告)日：1979-02-27

申请号：US734182

申请日：1976-10-20

申请人： Yoshihiko Mizushima ,  Kenji Kajiyama ,  Tatsuya Kimura ,  Hiroshi Kanbe

发明人： Yoshihiko Mizushima ,  Kenji Kajiyama ,  Tatsuya Kimura ,  Hiroshi Kanbe

IPC分类号： H01L31/107 ,  H01L27/14

CPC分类号： H01L31/107

摘要： The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.

摘要翻译： 改变多层结二极管的层的杂质浓度分布，使得在第二区域中与第一区域邻接的第一区域中的浓度较低，第三区域中的浓度较低，并且最后区域中的浓度分布逐渐增加 远离交界处的方向。

公开(公告)号：US08220249B2

公开(公告)日：2012-07-17

申请号：US12200265

申请日：2008-08-28

申请人： Tatsuya Kimura ,  Yoshihiro Kawamata ,  Kenichi Niu

发明人： Tatsuya Kimura ,  Yoshihiro Kawamata ,  Kenichi Niu

IPC分类号： B64G1/40

CPC分类号： F02K1/38 ,  F02K9/48 ,  F02K9/58 ,  F02K9/82 ,  F02K9/972 ,  F05D2250/713

摘要： A rocket nozzle includes a dual-bell nozzle and a gas introducing section configured to introduce gas into space surrounded by the dual-bell nozzle. Combustion gas flows in the space. The dual-bell nozzle includes a first stage nozzle bell-shaped and surrounding an upstream portion of the space, and a second stage nozzle bell-shaped and surrounding a downstream portion of the space. The dual-bell nozzle has an inflection point between the first stage nozzle and the second stage nozzle. The gas introducing section includes a gas inlet provided to an inner wall surface of the first stage nozzle. The gas is introduced into the space from the gas inlet.

摘要翻译： 火箭喷嘴包括双钟形喷嘴和构造成将气体引入由双钟形喷嘴包围的空间中的气体导入部。 燃烧气体在空间中流动。 双钟形喷嘴包括钟形状的第一级喷嘴并且围绕该空间的上游部分，以及第二级喷嘴钟形并围绕该空间的下游部分。 双钟形喷嘴在第一级喷嘴和第二级喷嘴之间具有拐点。 气体导入部包括设置在第一级喷嘴的内壁面的气体入口。 气体从气体入口引入空间。

公开(公告)号：US07072835B2

公开(公告)日：2006-07-04

申请号：US10052145

申请日：2002-01-17

申请人： Tomohiro Konuma ,  Tsuyoshi Inoue ,  Mitsuru Endo ,  Natsuki Saito ,  Akira Ishida ,  Tatsuya Kimura

发明人： Tomohiro Konuma ,  Tsuyoshi Inoue ,  Mitsuru Endo ,  Natsuki Saito ,  Akira Ishida ,  Tatsuya Kimura

IPC分类号： G10L15/04

CPC分类号： G10L15/065 ,  G10L15/08 ,  G10L15/1815 ,  G10L2015/088

摘要： A method and apparatus for speech recognition of the present application has a process to collate, with an input utterance, an acoustic model corresponding to a hypothesis to be expressed by the connection of utterance segments, such as phonemes or syllables, and developed according to a length of an input utterance by an inter-word connection rule thereby obtaining a recognition score. Within a word of the hypothesis, the similar hypotheses high in utterance score within a predetermined threshold from the maximum value of the score are all held to a word end irrespectively of the number of hypotheses. Meanwhile, at a word end of the hypotheses, the hypotheses are narrowed to a predetermined number of upper ranking in the order of higher score.

公开(公告)号：US20050282922A1

公开(公告)日：2005-12-22

申请号：US11141045

申请日：2005-06-01

申请人： Hisao Nakamura ,  Yoshihiko Kanda ,  Tatsuya Kimura

发明人： Hisao Nakamura ,  Yoshihiko Kanda ,  Tatsuya Kimura

IPC分类号： B29C47/00 ,  C08F2/00

CPC分类号： C08J9/143 ,  B29C48/022 ,  B29C48/07 ,  B29K2025/00 ,  B29K2105/04 ,  C08J9/141 ,  C08J2201/03 ,  C08J2325/06

摘要： A thick extruded polystyrene resin foam which can be obtained without using chlorofluorohydrocarbons has a center portion in which the cells are approximately spherical. The extruded polystyrene resin foam contains a residual gas selected from fluorohydrocarbons, aliphatic hydrocarbons and alicyclic hydrocarbons, and has a thickness of 45 to 150 mm and an apparent density of 0.015 to 0.06 g/cm3. The resin foam includes a center layer, excluding 10% of the foam thickness from each of the two foam surfaces, which is composed of cells with specific shape and compressive strengths in the foam thickness, transverse and machine directions.

摘要翻译： 可以在不使用氯氟烃的情况下获得的厚的挤出聚苯乙烯树脂泡沫体具有其中细胞近似球形的中心部分。 挤出的聚苯乙烯树脂泡沫体含有选自氟代烃，脂族烃和脂环族烃的残留气体，其厚度为45〜150mm，表观密度为0.015〜0.06g / cm 3。 树脂泡沫包括中心层，不包括两个泡沫表面的泡沫厚度的10％，其由在泡沫厚度，横向和机器方向上具有特定形状和压缩强度的泡孔组成。