摘要:
A detecting apparatus that detects an abnormality of imbalance of air-fuel ratios among cylinders of a multi-cylinder internal combustion engine, which is equipped with a variable working angle mechanism of an intake valve, the detecting apparatus includes an abnormality detection portion that detects a parameter regarding rotational fluctuations of each of the cylinders and detects whether or not there is an abnormality of imbalance of air-fuel ratios among the cylinders. The abnormality detection portion refrains from determining that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined large working angle range, and determines that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined small working angle range that is on a small working angle side with respect to the large working angle range.
摘要:
A detecting apparatus that detects an abnormality of imbalance of air-fuel ratios among cylinders of a multi-cylinder internal combustion engine, which is equipped with a variable working angle mechanism of an intake valve, the detecting apparatus includes an abnormality detection portion that detects a parameter regarding rotational fluctuations of each of the cylinders and detects whether or not there is an abnormality of imbalance of air-fuel ratios among the cylinders. The abnormality detection portion refrains from determining that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined large working angle range, and determines that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined small working angle range that is on a small working angle side with respect to the large working angle range.
摘要:
A pad (15) is provided on a surface connecting a first substrate (11) of a lower layer module with an upper layer module, the pad is partially covered by an insulating film (20) to form an opening section (3) exposing the pad (15), a first connection terminal (2) is formed on the lower surface of the first substrate (11) of the lower layer module, the planar shape of the opening section (3) is different from the planar shape of the first connection terminal (2), the outer shape of the opening section (3) is larger than the first connection terminal (2), and in a transmissive inspection from above, the shape of the lower end of a second connection terminal (30) spreading in the opening section (3) is not concealed by the other terminal. This configuration enables easy and reliable determination of whether bonding sections are satisfactory by a non-destructive inspection.
摘要:
An upper surface of a semiconductor substrate includes a first portion where a dielectric film is provided, and a second portion where the dielectric film is not provided, wherein the second portion is located in the periphery of the first portion. The upper surface of the semiconductor substrate is covered with a sealing resin.
摘要:
A stacked chip semiconductor device including: a substrate having electrode pads; a first semiconductor chip that is flip-chip-packaged on the substrate via a first adhesive layer; a second semiconductor chip that is mounted on an upper part of the first semiconductor chip and that has electrode pads; wires for electrically connecting the electrode pads of the second semiconductor chip and the electrode pads of the substrate; and a molded resin for encapsulating the first semiconductor chip, the second semiconductor chip and the wires, the first adhesive layer forming a fillet at the periphery of the first semiconductor chip. The first semiconductor chip is disposed with its central axis being offset from a central axis of the substrate, the offset being provided so that the first semiconductor chip is shifted toward a side opposite to a side where the fillet has a maximum length from the periphery of the first semiconductor chip. Thereby, influences of the fillet made of the adhesive are suppressed, allowing miniaturization of the device and improvement in the mass-productivity.
摘要:
A semiconductor device includes: a wiring board; a first semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which is electrically connected to the wiring board via a raised electrode, the circuitry side of the first chip facing the principal surface of the wiring board; and a second semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which includes an external electrode on the circuitry side thereof. The non-circuitry sides of the first and second semiconductor chips are secured to each other. The external electrode of the second semiconductor chip is connected to the wiring board via a metal fine wire. The external and raised electrodes are so disposed as not to overlap each other as viewed vertically downward from over the principal surface of the wiring board.
摘要:
A semiconductor device and a manufacturing method for the same are provided wherein the reliability of connections of fine metal wires connecting a second semiconductor chip to a wiring board can be improved in the case wherein the second semiconductor chip, which is located above the lower, first semiconductor chip, is significantly larger than the first semiconductor chip in a configuration wherein two semiconductor chips are stacked and mounted on a wiring board. In this semiconductor device the rear surface of the first semiconductor chip and the rear surface of the second semiconductor chip are adhered to each other by means of adhesive and the side of the adhesive is inclined from the edge portions of the first semiconductor chip toward the portions of the second semiconductor chip extending from the side of the first semiconductor chip. Therefore, it becomes possible to prevent the occurrence of microcracks in the second semiconductor chip and to prevent the occurrence of defective fine metal wire connections caused by the impact at the time of electrical connection of the second semiconductor chip to the wiring board.
摘要:
A semiconductor device includes: a wiring board; a first semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which is electrically connected to the wiring board via a raised electrode, the circuitry side of the first chip facing the principal surface of the wiring board; and a second semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which includes an external electrode on the circuitry side thereof. The non-circuitry sides of the first and second semiconductor chips are secured to each other. The external electrode of the second semiconductor chip is connected to the wiring board via a metal fine wire. The external and raised electrodes are so disposed as not to overlap each other as viewed vertically downward from over the principal surface of the wiring board.
摘要:
A semiconductor device includes: a wiring board; a first semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which is electrically connected to the wiring board via a raised electrode, the circuitry side of the first chip facing the principal surface of the wiring board; and a second semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which includes an external electrode on the circuitry side thereof. The non-circuitry sides of the first and second semiconductor chips are secured to each other. The external electrode of the second semiconductor chip is connected to the wiring board via a metal fine wire. The external and raised electrodes are so disposed as not to overlap each other as viewed vertically downward from over the principal surface of the wiring board.
摘要:
A modified layer 5 and an altered layer 8 are formed outside a dicing point of a dicing area 3. Thus without forming another interface between different physical properties on the dicing point, it is possible to prevent chipping from progressing along a crystal orientation from an interface between a semiconductor element 2 and a semiconductor substrate 1 and from a surface of the semiconductor element during dicing, thereby suppressing the development of chipping to the semiconductor element.