公开(公告)号：US20250022730A1

公开(公告)日：2025-01-16

申请号：US18767916

申请日：2024-07-09

Applicant: TES CO., LTD

Inventor： Jin-Hyung KIM

IPC: H01L21/67 ,  H01L21/673

Abstract: The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for detecting tilting or offset of a tray supporting a substrate when a processing process such as a drying process for a substrate using supercritical fluid.

公开(公告)号：US20240186159A1

公开(公告)日：2024-06-06

申请号：US18525785

申请日：2023-11-30

Applicant: TES CO., LTD

Inventor： Jong-Seok LEE ,  Seung-Min OH ,  In-Il JUNG

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67207 ,  H01L21/6704 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68785

Abstract: Provided is a substrate processing apparatus including a chamber providing a processing space in which a process is performed on a substrate coated with an organic solvent using a fluid in a supercritical state, a tray unit supporting the substrate and provided to be inserted into the chamber and withdraw from the chamber through an opening of the chamber, and a detector configured to measure a resistance of the substrate.

公开(公告)号：US20240175135A1

公开(公告)日：2024-05-30

申请号：US18283810

申请日：2022-03-27

Applicant: TES CO., LTD

Inventor： Sung-Chul CHOI ,  Kwang-Il CHO

IPC: C23C16/458 ,  C23C16/18 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/18 ,  C23C16/463

Abstract: The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus in which a coil connector through which a coil extension of a heating coil passes is provided in a chamber to improve assemblability and ease of maintenance by disposing, outside the chamber, a connector connecting a feedthrough and the heating coil for heating a substrate.

公开(公告)号：US20240167159A1

公开(公告)日：2024-05-23

申请号：US18283811

申请日：2022-03-27

Applicant: TES CO., LTD

Inventor： Sung-Chul CHOI ,  Kwang-Il CHO

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45591 ,  C23C16/4408 ,  C23C16/4583

Abstract: The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus including a gas supply, which uniformly supplies a process gas and is easily installed and maintained.

公开(公告)号：US20240042462A1

公开(公告)日：2024-02-08

申请号：US18227277

申请日：2023-07-27

Applicant: TES CO., LTD

Inventor： Kyung-Ho JANG ,  Byeong-Ho YUN ,  Min-Wook KANG

IPC: B05B1/00 ,  B05C5/02 ,  C23C16/455

CPC classification number: B05B1/005 ,  B05C5/0275 ,  B05C5/0225 ,  C23C16/45565 ,  C23C16/4557

Abstract: The present disclosure relates to a showerhead assembly and a substrate processing apparatus, and more particularly to a showerhead assembly and a substrate processing apparatus including a ceramic heater that heats a substrate and by which hole processing is freely performed in a relatively high temperature process.

公开(公告)号：US20220208720A1

公开(公告)日：2022-06-30

申请号：US17556906

申请日：2021-12-20

Applicant: TES CO., LTD

Inventor： Joo-Il HA ,  Yeong-Been KIM ,  Jae-Hwan KIM ,  Dong-Min NOH ,  Woo-Pil SHIM

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/66

Abstract: The present invention relates to a substrate bonding apparatus including: a chamber; a first chuck disposed inside the chamber to adhere a first substrate; a second chuck disposed facingly inside the chamber toward the first chuck to adhere a second substrate; and a camera located above or under the first chuck and the second chuck to recognize first alignment key disposed on the first substrate and second alignment key disposed on the second substrate.

公开(公告)号：US11118266B2

公开(公告)日：2021-09-14

申请号：US16189660

申请日：2018-11-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: C23C16/44 ,  C23C16/455 ,  H01L51/56 ,  C23C16/505 ,  H01L33/44 ,  H01L33/00 ,  H01L33/02 ,  H01L51/52 ,  C23C16/34 ,  C23C16/40

Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

公开(公告)号：US20190081283A1

公开(公告)日：2019-03-14

申请号：US16189452

申请日：2018-11-13

Applicant: TES CO., LTD

Inventor： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC: H01L51/56 ,  H01L51/52

CPC classification number: H01L51/56 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5256

Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

公开(公告)号：US20250051919A1

公开(公告)日：2025-02-13

申请号：US18796269

申请日：2024-08-06

Applicant: TES CO., LTD

Inventor： Shin-Myoung KIM ,  Hyun-Suk SONG ,  Hee-Won KIM

IPC: C23C16/458 ,  C23C16/52

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method for accurately accommodating a substrate at a central portion of a susceptor even when a tilt angle or a tilt direction of the susceptor on which the substrate is accommodated changes for each substrate or for each substrate process.

公开(公告)号：US20240309504A1

公开(公告)日：2024-09-19

申请号：US18600750

申请日：2024-03-10

Applicant: TES CO., LTD

Inventor： Yeong-Been KIM ,  Hyun-Shik AHN

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/45561 ,  C23C16/52

Abstract: Provided is a gas supply method of a substrate processing apparatus, more particularly, a gas supply method for controlling a supplied amount of gas more precisely when a gas such as a raw material is supplied to a substrate.