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    DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME AND MASK FOR MANUFACTURING THE SAME
    2.
    发明申请
    DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME AND MASK FOR MANUFACTURING THE SAME 有权
    显示装置，制造它们的方法和用于制造它们的掩模

    公开(公告)号：US20120009842A1

    公开(公告)日：2012-01-12

    申请号：US13239759

    申请日：2011-09-22

    申请人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

    发明人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

    IPC分类号： H01J9/00 ,  G03F1/00

    CPC分类号： G02F1/136213 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

    摘要翻译： 提供面罩。 面罩包括面罩主体，第一曝光部和第二曝光部。 第一曝光部分在面罩主体上。 第一曝光部分包括第一透光部分和第二透光部分。 第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。 第二透光部分使邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。 第二曝光部位在面罩主体上。 第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

    Display apparatus
    4.
    发明授权
    Display apparatus 有权
    显示装置

    公开(公告)号：US07982727B2

    公开(公告)日：2011-07-19

    申请号：US11102175

    申请日：2005-04-08

    申请人： Dong-Hwan Lee ,  Dong-Ho Lee ,  Soo-Jin Kim

    发明人： Dong-Hwan Lee ,  Dong-Ho Lee ,  Soo-Jin Kim

    IPC分类号： G09G5/00

    CPC分类号： G02F1/13452 ,  G02F2001/13456

    摘要： In a display apparatus, a printed circuit board has a base substrate, a flip chip, and an adhesive member. The flip chip is mounted onto a first face of the base substrate by the adhesive member between the flip chip and the first face of the base substrate. The first display panel is disposed on a second face opposite to the first face of the base substrate, and a second display panel is mounted on the first face of the base substrate with the flip chip. Thus, a chip mounted on the printed circuit board is made smaller and the freed up space can be used to mount the second display panel.

    摘要翻译： 在显示装置中，印刷电路板具有基底基板，倒装芯片和粘合部件。 倒装芯片通过位于倒装芯片和基底基板的第一面之间的粘合部件安装在基底基板的第一面上。 第一显示面板设置在与基底基板的第一面相反的第二面上，第二显示面板通过倒装芯片安装在基底基板的第一面上。 因此，安装在印刷电路板上的芯片更小，并且可以使用释放的空间来安装第二显示面板。

    Thin film transistor substrate and method for fabricating the same
    5.
    发明授权
    Thin film transistor substrate and method for fabricating the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US07863086B2

    公开(公告)日：2011-01-04

    申请号：US12553780

    申请日：2009-09-03

    申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

    发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0533 ,  H01L51/107

    摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

    摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

    Method of manufacturing a semiconductor device
    6.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07704851B2

    公开(公告)日：2010-04-27

    申请号：US11616018

    申请日：2006-12-26

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/76

    CPC分类号： H01L21/823475 ,  H01L21/7682 ,  H01L27/115 ,  H01L27/11521

    摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate with gate structures. A sacrificial insulating layer is formed between the gate structures at a height lower than that of the gate structures such that a portion of each gate structure is exposed above the sacrificial insulating layer. Spacers are formed on sidewalls of the exposed portions of the gate structures. A portion of the sacrificial insulating layer between the spacers is exposed. The sacrificial insulating layer is removed, thereby forming spaces below the spacers. An insulating layer is formed to fill the spaces between the spacers such that air pockets are formed between the gate structures and below the spacers.

    摘要翻译： 制造半导体器件的方法包括：提供具有栅极结构的半导体衬底。 在栅极结构之间形成牺牲绝缘层，其高度低于栅极结构的高度，使得每个栅极结构的一部分暴露在牺牲绝缘层的上方。 隔板形成在栅极结构的暴露部分的侧壁上。 间隔物之间​​的牺牲绝缘层的一部分被暴露。 去除牺牲绝缘层，从而在间隔物之下形成空间。 形成绝缘层以填充间隔件之间的空间，使得在栅极结构之间和间隔物下方形成气穴。

    Method of forming a gate of a semiconductor device
    7.
    发明授权
    Method of forming a gate of a semiconductor device 有权
    形成半导体器件的栅极的方法

    公开(公告)号：US07700472B2

    公开(公告)日：2010-04-20

    申请号：US11761281

    申请日：2007-06-11

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/28247 ,  H01L21/28273 ,  H01L27/11521

    摘要： A method of forming a gate of a semiconductor device includes providing a semiconductor substrate over which a first conductive layer, a dielectric layer and a second conductive layer are formed. The second conductive layer is patterned to expose a part of the dielectric layer. A first protection layer is formed on sidewalls of the second conductive layer. A first etch process is performed to remove the exposed dielectric layer and to expose a part of the first conductive layer. A second protection layer is formed on sidewalls of the second conductive layer. A second etch process is performed to remove the exposed first conductive layer.

    摘要翻译： 形成半导体器件的栅极的方法包括提供半导体衬底，在其上形成第一导电层，电介质层和第二导电层。 图案化第二导电层以暴露电介质层的一部分。 第一保护层形成在第二导电层的侧壁上。 执行第一蚀刻工艺以去除暴露的介电层并暴露第一导电层的一部分。 第二保护层形成在第二导电层的侧壁上。 执行第二蚀刻工艺以去除暴露的第一导电层。

    THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US20090317942A1

    公开(公告)日：2009-12-24

    申请号：US12553780

    申请日：2009-09-03

    申请人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

    发明人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

    IPC分类号： H01L51/40 ,  H01L21/336

    CPC分类号： H01L51/0533 ,  H01L51/107

    摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

    摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

    METHOD AND SYSTEM FOR TRANSMITTING MULTIMEDIA CONTENTS IN COMMUNICATION NETWORK
    10.
    发明申请
    METHOD AND SYSTEM FOR TRANSMITTING MULTIMEDIA CONTENTS IN COMMUNICATION NETWORK 审中-公开
    在通信网络中传输多媒体内容的方法和系统

    公开(公告)号：US20090264138A1

    公开(公告)日：2009-10-22

    申请号：US12096064

    申请日：2007-01-26

    申请人： Bong Ju Kang ,  Min Geun Yoon ,  Yun Duk Jeong ,  Soo Jin Kim ,  Ki Mun Kim ,  Jin Hong Kim

    发明人： Bong Ju Kang ,  Min Geun Yoon ,  Yun Duk Jeong ,  Soo Jin Kim ,  Ki Mun Kim ,  Jin Hong Kim

    IPC分类号： H04W4/12

    CPC分类号： H04L67/06 ,  H04L67/325

    摘要： Disclosed is a method and system for transmitting multimedia contents in a communication network, wherein multimedia data stored in a subscriber's terminal can be automatically uploaded. The method comprises the steps of (a) transmitting a multimedia data transmission command from a terminal multimedia storage server to a terminal through a communication network; and (b) when the terminal receives the multimedia data transmission command, uploading the multimedia data stored in the terminal to the terminal multimedia storage server in response to the multimedia data transmission command.

    摘要翻译： 公开了一种用于在通信网络中传输多媒体内容的方法和系统，其中存储在订户终端中的多媒体数据可以被自动上传。 该方法包括以下步骤：（a）通过通信网络将多媒体数据传输命令从终端多媒体存储服务器发送到终端; 以及（b）当所述终端接收到所述多媒体数据发送命令时，响应于所述多媒体数据发送命令，将存储在所述终端中的所述多媒体数据上传到所述终端多媒体存储服务器。