公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070018161A1

公开(公告)日：2007-01-25

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07605395B2

公开(公告)日：2009-10-20

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07599013B2

公开(公告)日：2009-10-06

申请号：US11724889

申请日：2007-03-15

申请人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

发明人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2201/50

摘要： A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

摘要翻译： 一种显示装置，其能够使施加到存储线的电压的泄漏最小化，包括绝缘基板; 形成在绝缘基板上的第一金属布线层; 存储线，与所述第一金属布线层隔离并且沿着所述第一金属布线层形成; 覆盖第一金属布线层和存储线的第一绝缘膜; 第二金属布线层，其形成在所述第一绝缘膜上并且包括与所述存储线相对应的存储容量形成层; 第二绝缘膜，其覆盖所述第二金属布线层并且包括暴露所述存储电容形成层的一部分的像素接触孔; 以及形成在第二绝缘膜上并经由像素接触孔连接到存储电容形成层的像素电极。

公开(公告)号：US20070216823A1

公开(公告)日：2007-09-20

申请号：US11724889

申请日：2007-03-15

申请人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

发明人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

IPC分类号： G02F1/136

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2201/50

摘要： A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

摘要翻译： 一种显示装置，其能够使施加到存储线的电压的泄漏最小化，包括绝缘基板; 形成在绝缘基板上的第一金属布线层; 存储线，与所述第一金属布线层隔离并且沿着所述第一金属布线层形成; 覆盖第一金属布线层和存储线的第一绝缘膜; 第二金属布线层，其形成在所述第一绝缘膜上并且包括与所述存储线相对应的存储容量形成层; 第二绝缘膜，其覆盖所述第二金属布线层并且包括暴露所述存储电容形成层的一部分的像素接触孔; 以及形成在第二绝缘膜上并经由像素接触孔连接到存储电容形成层的像素电极。

公开(公告)号：US20100127252A1

公开(公告)日：2010-05-27

申请号：US12692560

申请日：2010-01-22

申请人： Keun-kyu SONG ,  Young-min Kim ,  Tae-young Choi

发明人： Keun-kyu SONG ,  Young-min Kim ,  Tae-young Choi

IPC分类号： H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area.Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 本发明的实施例提供一种薄膜晶体管衬底，包括：绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层，形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔相对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极，形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。 因此，本发明提供了TFT的特性提高的有机TFT基板。

公开(公告)号：US07947986B2

公开(公告)日：2011-05-24

申请号：US12692560

申请日：2010-01-22

申请人： Keun-kyu Song ,  Young-min Kim ,  Tae-young Choi

发明人： Keun-kyu Song ,  Young-min Kim ,  Tae-young Choi

IPC分类号： H01L27/12

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area.Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 本发明的实施例提供一种薄膜晶体管衬底，包括：绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层，形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极，形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。 因此，本发明提供了TFT的特性提高的有机TFT基板。

公开(公告)号：US07675067B2

公开(公告)日：2010-03-09

申请号：US11491013

申请日：2006-07-21

申请人： Keun-kyu Song ,  Young-min Kim ,  Tae-young Choi

发明人： Keun-kyu Song ,  Young-min Kim ,  Tae-young Choi

IPC分类号： H01L27/12

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area.Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 本发明的实施例提供一种薄膜晶体管衬底，包括：绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层，形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔相对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极，形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。 因此，本发明提供了TFT的特性提高的有机TFT基板。

公开(公告)号：US20070018162A1

公开(公告)日：2007-01-25

申请号：US11491013

申请日：2006-07-21

申请人： Keun-kyu Song ,  Young-min Kim ,  Tae-young Choi

发明人： Keun-kyu Song ,  Young-min Kim ,  Tae-young Choi

IPC分类号： H01L29/04

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area. Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 本发明的实施例提供一种薄膜晶体管衬底，包括：绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层，形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极，形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。 因此，本发明提供了TFT的特性提高的有机TFT基板。

公开(公告)号：US09141075B2

公开(公告)日：2015-09-22

申请号：US13470974

申请日：2012-05-14

申请人： Dong-ha Choi ,  Kiel-jae Hur ,  Young-min Kim

发明人： Dong-ha Choi ,  Kiel-jae Hur ,  Young-min Kim

IPC分类号： G03G21/00 ,  G03G21/16

CPC分类号： G03G21/1609 ,  G03G21/1628 ,  G03G2215/00016

摘要： An image forming apparatus including: a first body including a developing unit to perform an image forming operation on a print medium, and a second body provided above the first body to pivot between a closed position and an open position in relation to the first body, the second body including a light emitting unit, wherein the light emitting unit is directly above the developing unit when the second body is in the closed position, and the developing unit is exposed to an outside of the image forming apparatus when the second body is in the closed position. A user can place the image forming apparatus on a desktop, which increases convenience in using the apparatus. Additionally, a specialized image forming apparatus can be provided to a user who mainly wants to print and copy in small quantities.

摘要翻译： 一种图像形成装置，包括：第一主体，包括用于在打印介质上执行图像形成操作的显影单元，以及设置在第一主体上方的第二主体，用于相对于第一主体在关闭位置和打开位置之间枢转， 所述第二主体包括发光单元，其中当所述第二主体处于关闭位置时，所述发光单元直接位于所述显影单元的上方，并且当所述第二主体处于所述第二主体时，所述显影单元暴露于所述图像形成装置的外部 关闭位置。 用户可以将图像形成装置放置在桌面上，这增加了使用该装置的便利性。 此外，可以向主要想要少量打印和复制的用户提供专门的图像形成装置。