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公开(公告)号：US08410577B2
公开(公告)日：2013-04-02
申请号：US12103857
申请日：2008-04-16
Applicant: Katsu Horikoshi , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
Inventor： Katsu Horikoshi , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
IPC: H01L29/92
CPC classification number: H01L23/642 , H01L23/3114 , H01L23/481 , H01L23/5223 , H01L24/11 , H01L24/12 , H01L24/25 , H01L24/29 , H01L24/32 , H01L27/14618 , H01L27/14683 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/1132 , H01L2224/131 , H01L2224/18 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/3512 , H01L2224/13099 , H01L2924/00
Abstract: The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.
Abstract translation: 本发明提供了一种半导体器件，其中具有电容器元件以实现器件的尺寸减小，电容器元件具有比常规更大的电容。 半导体集成电路和焊盘电极形成在半导体衬底的前表面上。 在半导体衬底的侧表面和后表面上形成第二绝缘膜，并且在半导体衬底的背面与第二绝缘膜之间形成电容电极，与半导体衬底的后表面接触。 第二绝缘膜由与焊盘电极电连接的布线层覆盖，并且布线层和电容器电极与第二绝缘膜重叠。 因此，电容器电极，第二绝缘膜和布线层形成电容器。
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公开(公告)号：US08102039B2
公开(公告)日：2012-01-24
申请号：US12376917
申请日：2007-08-02
Applicant: Takashi Noma , Yuichi Morita , Hiroshi Yamada , Kazuo Okada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
Inventor： Takashi Noma , Yuichi Morita , Hiroshi Yamada , Kazuo Okada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC: H01L23/02
CPC classification number: H01L25/105 , B81B7/007 , B81C1/00238 , H01L23/13 , H01L23/481 , H01L24/97 , H01L25/0657 , H01L2224/16145 , H01L2225/0652 , H01L2225/06555 , H01L2225/1035 , H01L2225/1058 , H01L2225/1088 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/1461 , H01L2924/15788 , H01L2924/3511 , H01L2924/00
Abstract: This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.
Abstract translation: 本发明旨在提供一种能够实现较小尺寸的器件及其制造方法的封装型半导体器件以及小型堆叠层型半导体器件及其制造方法。 在半导体基板2上形成与器件部件1电连接的器件部件1和焊盘电极4.支撑部件7通过粘接层6与半导体基板2的表面接合。 支撑构件7中的孔15从其顶表面穿透到后表面。 通过通孔15可实现与另一装置的电连接。凹部12形成在支撑构件7的上表面的部分区域中。因此，可以设置其他装置或部件的全部或一部分 利用凹陷部分12中的空间。当形成层叠型半导体器件时，通过将上层的半导体器件50的一部分安装到凹陷部分12的内部来进行堆叠。
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公开(公告)号：US20100164086A1
公开(公告)日：2010-07-01
申请号：US12376917
申请日：2007-08-02
Applicant: Takashi Noma , Yuichi Morita , Hiroshi Yamada , Kazuo Okada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
Inventor： Takashi Noma , Yuichi Morita , Hiroshi Yamada , Kazuo Okada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC: H01L25/065 , H01L23/488 , H01L21/60 , H01L21/77 , H01L23/52
CPC classification number: H01L25/105 , B81B7/007 , B81C1/00238 , H01L23/13 , H01L23/481 , H01L24/97 , H01L25/0657 , H01L2224/16145 , H01L2225/0652 , H01L2225/06555 , H01L2225/1035 , H01L2225/1058 , H01L2225/1088 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/1461 , H01L2924/15788 , H01L2924/3511 , H01L2924/00
Abstract: This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.
Abstract translation: 本发明旨在提供一种能够实现较小尺寸的器件及其制造方法的封装型半导体器件以及小型堆叠层型半导体器件及其制造方法。 在半导体基板2上形成与器件部件1电连接的器件部件1和焊盘电极4.支撑部件7通过粘接层6与半导体基板2的表面接合。 支撑构件7中的孔15从其顶表面穿透到后表面。 通过通孔15可实现与另一装置的电连接。凹部12形成在支撑构件7的上表面的部分区域中。因此，可以设置其他装置或部件的全部或一部分 利用凹陷部分12中的空间。当形成层叠型半导体器件时，通过将上层的半导体器件50的一部分安装到凹陷部分12的内部来进行堆叠。
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公开(公告)号：US07589388B2
公开(公告)日：2009-09-15
申请号：US11875438
申请日：2007-10-19
Applicant: Yuichi Morita , Takashi Noma , Hiroyuki Shinogi , Shinzo Ishibe , Katsuhiko Kitagawa , Noboru Okubo , Kazuo Okada , Hiroshi Yamada
Inventor： Yuichi Morita , Takashi Noma , Hiroyuki Shinogi , Shinzo Ishibe , Katsuhiko Kitagawa , Noboru Okubo , Kazuo Okada , Hiroshi Yamada
CPC classification number: H01L23/3114 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/30 , H01L27/14618 , H01L27/14683 , H01L2224/0401 , H01L2224/05599 , H01L2224/13099 , H01L2224/29101 , H01L2224/2919 , H01L2924/0001 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10156 , H01L2924/15151 , H01L2924/15311 , H01L2924/00 , H01L2924/3512
Abstract: The invention is directed to providing a package type semiconductor device with high reliability and smaller size and a method of manufacturing the same. A semiconductor substrate formed with a device element and a pad electrode on its front surface is prepared. The semiconductor substrate is then selectively etched from its back surface to form an opening. A second insulation film is then formed covering the side and back surfaces of the semiconductor substrate. First and second insulation films on the bottom of the opening are then selectively removed to expose a portion of the pad electrode. A wiring layer is then formed along the side surface of the semiconductor substrate, being electrically connected with the exposed pad electrode. An electrode connect layer is then formed covering the wiring layer. A protection layer is then formed covering the back surface of the semiconductor substrate and having an opening in a region for formation of a sidewall electrode. Then, the sidewall electrode is formed in a region exposed by the opening of the protection layer.
Abstract translation: 本发明旨在提供一种具有高可靠性和较小尺寸的封装型半导体器件及其制造方法。 制备在其表面上形成有器件元件和焊盘电极的半导体衬底。 然后从其背面选择性地蚀刻半导体衬底以形成开口。 然后形成覆盖半导体衬底的侧表面和后表面的第二绝缘膜。 然后选择性地去除开口底部的第一和第二绝缘膜以露出焊盘电极的一部分。 然后沿着半导体衬底的侧表面形成布线层，与暴露的焊盘电极电连接。 然后形成覆盖布线层的电极连接层。 然后形成覆盖半导体衬底的后表面并且在用于形成侧壁电极的区域中具有开口的保护层。 然后，侧壁电极形成在由保护层的开口露出的区域中。
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公开(公告)号：US20090206349A1
公开(公告)日：2009-08-20
申请号：US12438869
申请日：2007-08-22
Applicant: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
Inventor： Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
CPC classification number: H01L27/14618 , B81C1/00269 , B81C2203/0118 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/13025 , H01L2924/00014
Abstract: An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.
Abstract translation: 本发明的目的是提供一种较小的半导体器件，其制造工艺简化并且制造成本降低，并且制造该半导体器件的方法。 此外，本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上，其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上，其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2，第一支撑体5和第二支撑体7包围的空腔9中。
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Patent Agency Ranking
公开(公告)号：US20080135967A1
公开(公告)日：2008-06-12
申请号：US11942506
申请日：2007-11-19
Applicant: Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
Inventor： Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
IPC: H01L31/0203 , H01L31/18
CPC classification number: H01L31/0203 , H01L31/0224 , H01L31/18 , H01L2224/48091 , H01L2224/48227 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layer 6 due to a blue-violet laser.
Abstract translation: 本发明旨在提供一种接收蓝紫色激光的半导体器件，其可靠性和产量得到提高。 在半导体衬底的前表面上形成将蓝紫色激光转换为电信号的器件元件。 光学透明基板以其间插入粘合剂层的方式附着于半导体基板的前表面。 粘合层含有透明硅胶。 由于器件元件的前表面被光学透明基板覆盖，因此防止异物粘附到器件元件的前表面。 此外，粘合剂层被光学透明基板覆盖。 这防止粘合剂层暴露于外部空气，从而防止由于蓝紫色激光而导致的粘合剂层6的劣化。
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公开(公告)号：US20070210437A1
公开(公告)日：2007-09-13
申请号：US11714906
申请日：2007-03-07
Applicant: Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
Inventor： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC: H01L23/48
CPC classification number: H01L23/3128 , H01L21/6835 , H01L21/6836 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L25/105 , H01L2221/68327 , H01L2221/68354 , H01L2224/13 , H01L2224/13099 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/3511 , H01L2924/00
Abstract: A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
Abstract translation: 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。
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公开(公告)号：US20070075425A1
公开(公告)日：2007-04-05
申请号：US11529553
申请日：2006-09-29
Applicant: Yuichi Morita , Shinzo Ishibe , Takashi Noma , Hisao Otsuka , Yukihiro Takao , Hiroshi Kanamori
Inventor： Yuichi Morita , Shinzo Ishibe , Takashi Noma , Hisao Otsuka , Yukihiro Takao , Hiroshi Kanamori
CPC classification number: H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/562 , H01L23/564 , H01L2221/6834 , H01L2224/0392 , H01L2224/0401 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05124 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/13022 , H01L2224/13024 , H01L2224/16237 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/00014
Abstract: The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.
Abstract translation: 本发明防止半导体器件的外部连接的焊盘电极被损坏。 连接到电子电路的电子电路，第一焊盘电极和连接到第一焊盘电极的第二焊盘电极形成在半导体衬底上。 形成第一保护膜，覆盖第一焊盘电极并且仅在第二焊盘电极上具有开口。 进一步形成布线层，其通过穿透半导体衬底的通孔连接到第一焊盘电极的背面并从通孔延伸到半导体衬底的背面。
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公开(公告)号：US20070001302A1
公开(公告)日：2007-01-04
申请号：US11451633
申请日：2006-06-13
Applicant: Yuichi Morita , Shinzo Ishibe , Takashi Noma , Hisao Otsuka , Yukihiro Takao , Hiroshi Kanamori
Inventor： Yuichi Morita , Shinzo Ishibe , Takashi Noma , Hisao Otsuka , Yukihiro Takao , Hiroshi Kanamori
CPC classification number: H01L23/3192 , H01L23/3114 , H01L23/3171 , H01L24/11 , H01L24/12 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05567 , H01L2224/05644 , H01L2224/1132 , H01L2224/1147 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
Abstract: The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.
Abstract translation: 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括形成在半导体衬底上的焊盘电极，覆盖焊盘电极的端部并且在焊盘电极上具有第一开口的第一钝化膜，形成在第一开口中的焊盘电极上的镀层，第二钝化膜 钝化膜，覆盖第一钝化膜的端部与镀覆层之间的焊盘电极的露出部分，覆盖镀层的端部，并且在镀层上具有第二开口;以及导电端子， 第二开口中的镀层。
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公开(公告)号：US08766408B2
公开(公告)日：2014-07-01
申请号：US11714906
申请日：2007-03-07
Applicant: Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
Inventor： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC: H01L21/00
CPC classification number: H01L23/3128 , H01L21/6835 , H01L21/6836 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L25/105 , H01L2221/68327 , H01L2221/68354 , H01L2224/13 , H01L2224/13099 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/3511 , H01L2924/00
Abstract: A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
Abstract translation: 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。
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