公开(公告)号：US20080258258A1

公开(公告)日：2008-10-23

申请号：US12103857

申请日：2008-04-16

Applicant: Katsu HORIKOSHI ,  Hisayoshi Uchiyama ,  Takashi Noma ,  Yoshinori Seki ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Hiroyuki Shinogi

Inventor： Katsu HORIKOSHI ,  Hisayoshi Uchiyama ,  Takashi Noma ,  Yoshinori Seki ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC: H01L29/92

CPC classification number: H01L23/642 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/5223 ,  H01L24/11 ,  H01L24/12 ,  H01L24/25 ,  H01L24/29 ,  H01L24/32 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/18 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2224/13099 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.

Abstract translation: 本发明提供了一种半导体器件，其中具有电容器元件以实现器件的尺寸减小，电容器元件具有比常规更大的电容。 半导体集成电路和焊盘电极形成在半导体衬底的前表面上。 在半导体衬底的侧表面和后表面上形成第二绝缘膜，并且在半导体衬底的背面与第二绝缘膜之间形成电容电极，与半导体衬底的后表面接触。 第二绝缘膜由与焊盘电极电连接的布线层覆盖，并且布线层和电容器电极与第二绝缘膜重叠。 因此，电容器电极，第二绝缘膜和布线层形成电容器。

公开(公告)号：US08410577B2

公开(公告)日：2013-04-02

申请号：US12103857

申请日：2008-04-16

Applicant: Katsu Horikoshi ,  Hisayoshi Uchiyama ,  Takashi Noma ,  Yoshinori Seki ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Hiroyuki Shinogi

Inventor： Katsu Horikoshi ,  Hisayoshi Uchiyama ,  Takashi Noma ,  Yoshinori Seki ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC: H01L29/92

CPC classification number: H01L23/642 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/5223 ,  H01L24/11 ,  H01L24/12 ,  H01L24/25 ,  H01L24/29 ,  H01L24/32 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/18 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2224/13099 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.

Abstract translation: 本发明提供了一种半导体器件，其中具有电容器元件以实现器件的尺寸减小，电容器元件具有比常规更大的电容。 半导体集成电路和焊盘电极形成在半导体衬底的前表面上。 在半导体衬底的侧表面和后表面上形成第二绝缘膜，并且在半导体衬底的背面与第二绝缘膜之间形成电容电极，与半导体衬底的后表面接触。 第二绝缘膜由与焊盘电极电连接的布线层覆盖，并且布线层和电容器电极与第二绝缘膜重叠。 因此，电容器电极，第二绝缘膜和布线层形成电容器。

公开(公告)号：US4982435A

公开(公告)日：1991-01-01

申请号：US180483

申请日：1988-04-12

Applicant: Masami Kato ,  Katsu Horikoshi

Inventor： Masami Kato ,  Katsu Horikoshi

IPC: H03G5/16 ,  H03G9/02

CPC classification number: H03G9/025 ,  H03G5/165

Abstract: An automatic loudness control circuit for automatically controlling the magnitude of boosting of the low-frequency component of an audio signal in accordance with the output signal level of a power amplifier for driving a loud-speaker. The low-frequency component of the output signal from an audio signal source is boosted by a low frequency boosting circuit to prepare a low-frequency boost signal, which is then added to the output signal of the source, and the resulting signal is fed to the power amplifier. The magnitude of boosting by the boosting circuit is controlled according to the output level of the power amplifier and is therefore increased as the output level lowers. Consequently, the circuit assures optimum loudness control at all times, permitting the loudspeaker to produce dynamic sounds.

公开(公告)号：US06636550B1

公开(公告)日：2003-10-21

申请号：US09218673

申请日：1998-12-22

Applicant: Katsu Horikoshi ,  Hisayoshi Uchiyama

Inventor： Katsu Horikoshi ,  Hisayoshi Uchiyama

IPC: H04B169

CPC classification number: H04B1/7075 ,  H04B1/76

Abstract: To ensure establishment of synchronization and data demodulation among a number of transmitter/receivers using a spread spectrum method. Specifically, in a normal communication state, a second transmitter/receiver sends transmission data including a pilot carrier and a communication carrier. Receiving the transmission data, a first transmitter/receiver establishes synchronization between a spread code contained in the received spread spectrum signal and its own generated spread code, based on dummy data received during a pilot carrier period, and maintains the established synchronization. Thereafter, the first transmitter/receiver digitally demodulates data in the communication carrier. The resultant data is subjected to decoding and analog conversion to be converted into an audio signal. A control data is derived from the digitally demodulated data, and used to control the operation of the first transmitter/receiver. With this arrangement, synchronization is established between a received spread spectrum code and generated spread spectrum code, and then a communication carrier period starts. This makes it possible to ensure establishment of synchronization and data demodulation despite a longer time necessary for a receiver/transmitter employing a spread spectrum method to establish synchronization for spread spectrum codes.

Abstract translation: 确保使用扩频方法在多个发射机/接收机之间建立同步和数据解调。 具体地说，在正常通信状态下，第二发送接收器发送包括导频载波和通信载波的发送数据。 接收传输数据，第一发射机/接收机基于在导频载波周期期间接收到的伪数据，建立在接收的扩展频谱信号中包含的扩展码与其自己产生的扩展码之间的同步，并保持建立的同步。 此后，第一发射机/接收机对通信载波中的数据进行数字解调。 对所得数据进行解码和模拟转换以转换成音频信号。 从数字解调数据导出控制数据，并用于控制第一发射机/接收机的操作。 利用这种布置，在接收的扩展频谱码和生成的扩频码之间建立同步，然后开始通信载波周期。 这使得可以确保建立同步和数据解调，尽管采用扩频方法的接收机/发射机需要更长的时间来建立扩频码的同步。