公开(公告)号：US20160111524A1

公开(公告)日：2016-04-21

申请号：US14820860

申请日：2015-08-07

申请人： Seungseok HA ,  Keunhee BAI ,  Kyounghwan YEO ,  Eunsil PARK ,  Heonjong SHIN

发明人： Seungseok HA ,  Keunhee BAI ,  Kyounghwan YEO ,  Eunsil PARK ,  Heonjong SHIN

IPC分类号： H01L29/66 ,  H01L21/762

CPC分类号： H01L29/66795 ,  H01L21/76229 ,  H01L29/66545

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

摘要翻译： 提供半导体器件及其制造方法。 所述方法可以包括形成限定翅片有源区域的隔离区域，在隔离区域上形成牺牲场栅极图案，并在翅片有源区域上形成牺牲鳍栅极图案。 该方法还可以包括形成场栅切割区，其包括露出隔离区的表面的第一凹部和鳍片主动切割区，其包括暴露翅片有源区的表面的第二凹部，在第二凹部中形成翅片活动凹部 的翅片活动切割区域，并且通过在场浇口切割区域的第一凹部和翅片活动凹部中分别形成绝缘材料，分别形成场门芯和翅片活动芯。

公开(公告)号：US09673300B2

公开(公告)日：2017-06-06

申请号：US14820860

申请日：2015-08-07

申请人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

发明人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

IPC分类号： H01L21/762 ,  H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/76229 ,  H01L29/66545

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

公开(公告)号：US09978746B2

公开(公告)日：2018-05-22

申请号：US15059423

申请日：2016-03-03

申请人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

发明人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L27/11 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/7848

摘要： Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.

公开(公告)号：US20160307890A1

公开(公告)日：2016-10-20

申请号：US15059423

申请日：2016-03-03

申请人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

发明人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L27/105

CPC分类号： H01L27/088 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/7848

摘要： Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.

摘要翻译： 提供了具有场效应晶体管的半导体器件。 半导体器件可以包括包括有源图案的衬底，与有源图案交叉的分离结构，并将活性图案分成第一和第二区域。 分离结构可以包括填充第一和第二区域之间的凹部区域的第一绝缘图案。 第一绝缘图案可以具有凹的顶表面。