公开(公告)号：US09673300B2

公开(公告)日：2017-06-06

申请号：US14820860

申请日：2015-08-07

申请人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

发明人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

IPC分类号： H01L21/762 ,  H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/76229 ,  H01L29/66545

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

公开(公告)号：US09728643B2

公开(公告)日：2017-08-08

申请号：US14974018

申请日：2015-12-18

申请人： Byungjae Park ,  Heonjong Shin ,  Hagju Cho ,  Kyounghwan Yeo

发明人： Byungjae Park ,  Heonjong Shin ,  Hagju Cho ,  Kyounghwan Yeo

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545

摘要： A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

公开(公告)号：US20160293749A1

公开(公告)日：2016-10-06

申请号：US14974018

申请日：2015-12-18

申请人： Byungjae PARK ,  Heonjong SHIN ,  Hagju CHO ,  Kyounghwan YEO

发明人： Byungjae PARK ,  Heonjong SHIN ,  Hagju CHO ,  Kyounghwan YEO

IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545

摘要： A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

摘要翻译： 一种半导体器件，包括从衬底突出的翅片有源区和限定鳍有源区的隔离区，与鳍有源区和隔离区相交的栅极图案，以及形成在栅极图案的侧表面上并延伸到 提供了隔离区域的表面。

公开(公告)号：US20160111524A1

公开(公告)日：2016-04-21

申请号：US14820860

申请日：2015-08-07

申请人： Seungseok HA ,  Keunhee BAI ,  Kyounghwan YEO ,  Eunsil PARK ,  Heonjong SHIN

发明人： Seungseok HA ,  Keunhee BAI ,  Kyounghwan YEO ,  Eunsil PARK ,  Heonjong SHIN

IPC分类号： H01L29/66 ,  H01L21/762

CPC分类号： H01L29/66795 ,  H01L21/76229 ,  H01L29/66545

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

摘要翻译： 提供半导体器件及其制造方法。 所述方法可以包括形成限定翅片有源区域的隔离区域，在隔离区域上形成牺牲场栅极图案，并在翅片有源区域上形成牺牲鳍栅极图案。 该方法还可以包括形成场栅切割区，其包括露出隔离区的表面的第一凹部和鳍片主动切割区，其包括暴露翅片有源区的表面的第二凹部，在第二凹部中形成翅片活动凹部 的翅片活动切割区域，并且通过在场浇口切割区域的第一凹部和翅片活动凹部中分别形成绝缘材料，分别形成场门芯和翅片活动芯。