- 专利标题： Semiconductor devices having a spacer on an isolation region
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申请号： US14974018申请日： 2015-12-18
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公开(公告)号： US09728643B2公开(公告)日： 2017-08-08
- 发明人: Byungjae Park , Heonjong Shin , Hagju Cho , Kyounghwan Yeo
- 申请人： Byungjae Park , Heonjong Shin , Hagju Cho , Kyounghwan Yeo
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2015-0046420 20150401
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/417 ; H01L29/66
摘要：
A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.
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