公开(公告)号：US12087856B2

公开(公告)日：2024-09-10

申请号：US18166062

申请日：2023-02-08

申请人： TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Kohei Sasaki

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/24 ,  H01L29/417 ,  H01L29/808

CPC分类号： H01L29/7813 ,  H01L29/1095 ,  H01L29/24 ,  H01L29/41741 ,  H01L29/8083

摘要： A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.

公开(公告)号：US20230162978A1

公开(公告)日：2023-05-25

申请号：US17917721

申请日：2021-04-07

申请人： TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Quang Tu THIEU ,  Kohei SASAKI

IPC分类号： H01L21/02 ,  H01L29/872 ,  H01L29/24 ,  C30B25/14 ,  C30B25/20 ,  C30B29/16

CPC分类号： H01L21/0262 ,  H01L21/02414 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02634 ,  H01L21/02598 ,  H01L29/872 ,  H01L29/24 ,  C30B25/14 ,  C30B25/20 ,  C30B29/16

摘要： A method for manufacturing a semiconductor film includes placing a semiconductor substrate including a β-Ga2O3-based single crystal in a reaction chamber of an HVPE apparatus. When the semiconductor substrate is placed so that the growth base surface faces upward, an inlet for a dopant-including gas into the space is positioned higher than an inlet for an oxygen-including gas into the space and an inlet for a Ga chloride gas into the space is positioned higher than the inlet for the dopant-including gas into the space. When the semiconductor substrate is placed so that the growth base surface faces downward, the inlet for the dopant-including gas into the space is positioned higher than the inlet for the Ga chloride gas into the space and the inlet for the oxygen-including gas into the space is positioned higher than the inlet for the dopant-including gas into the space.

公开(公告)号：US20230130166A1

公开(公告)日：2023-04-27

申请号：US18049309

申请日：2022-10-25

申请人： Novel Crystal Technology, Inc.

发明人： Takuya IGARASHI ,  Yuki UEDA ,  Kimiyoshi KOSHI

IPC分类号： C30B11/00 ,  C30B35/00 ,  C30B29/16

摘要： A single crystal growth apparatus to grow a single crystal of a gallium oxide-based semiconductor. The apparatus includes a crucible that includes a seed crystal section to accommodate a seed crystal, and a growing crystal section which is located on the upper side of the seed crystal section and in which the single crystal is grown by crystallizing a raw material melt accommodated therein, a tubular susceptor surrounding the seed crystal section and also supporting the crucible from below, and a molybdenum disilicide heating element to melt a raw material in the growing crystal section to obtain the raw material melt. The susceptor includes a thick portion at a portion in a height direction that is thicker and has a shorter horizontal distance from the seed crystal section than other portions. The thick portion surrounds at least a portion of the seed crystal section in the height direction.

公开(公告)号：US20210167225A1

公开(公告)日：2021-06-03

申请号：US16758790

申请日：2018-09-26

申请人： TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Jun ARIMA ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Kohei SASAKI

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/24

摘要： A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

公开(公告)号：US11929402B2

公开(公告)日：2024-03-12

申请号：US17186746

申请日：2021-02-26

申请人： Novel Crystal Technology, Inc.

发明人： Tadashi Kase ,  Kazuo Aoki ,  Shigenobu Yamakoshi ,  Yuki Uchida

IPC分类号： H01L29/24 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/24 ,  H01L29/1033 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/42364 ,  H01L29/66674 ,  H01L29/7801

摘要： A field-effect transistor includes a Ga2O3-based semiconductor layer, a source region and a drain region that are formed inside the Ga2O3-based semiconductor layer, a gate electrode that is formed, via a gate insulating film, on a channel region as the Ga2O3-based semiconductor layer between the source region and the drain region, a source electrode connected to the source region, and a drain electrode connected to the drain region. An interface charge including a negative charge is formed between the gate electrode and the channel region, and a gate threshold voltage is not less than 4.5V.

公开(公告)号：US11626522B2

公开(公告)日：2023-04-11

申请号：US16758790

申请日：2018-09-26

申请人： TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Jun Arima ,  Jun Hirabayashi ,  Minoru Fujita ,  Kohei Sasaki

IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/24

摘要： A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

公开(公告)号：US11469334B2

公开(公告)日：2022-10-11

申请号：US17041127

申请日：2019-03-11

申请人： TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi ,  Kohei Sasaki

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/41 ,  H01L29/47 ,  H01L29/24 ,  H01L29/66

摘要： An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

公开(公告)号：US11355594B2

公开(公告)日：2022-06-07

申请号：US16635319

申请日：2018-07-23

申请人： TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Kohei Sasaki

IPC分类号： H01L29/66 ,  H01L29/24 ,  H01L29/45 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L21/02 ,  H01L21/443 ,  H01L21/465

摘要： A diode includes an n-type semiconductor layer including an n-type Ga2O3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.

公开(公告)号：US20210343880A1

公开(公告)日：2021-11-04

申请号：US17282629

申请日：2019-10-09

申请人： TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

发明人： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC分类号： H01L29/872 ,  H01L29/47 ,  H01L29/41 ,  H01L29/24

摘要： An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

公开(公告)号：US20210313434A1

公开(公告)日：2021-10-07

申请号：US17217408

申请日：2021-03-30

申请人： NOVEL CRYSTAL TECHNOLOGY, INC.

发明人： Shinya WATANABE ,  Masanori YOKOO

IPC分类号： H01L29/24 ,  H01L29/04 ,  H01L23/15 ,  H01L21/02

摘要： A semiconductor substrate includes a gallium oxide-based semiconductor single crystal and a chamfered portion at an outer periphery portion. The chamfered portion includes a first inclined surface located on the outer side of a first principal surface of the semiconductor substrate and being linear at an edge in a vertical cross section of the semiconductor substrate, a second inclined surface located on the outer side of a second principal surface on the opposite side to the first principal surface and being linear at an edge in the vertical cross section, and an end face located between the first inclined surface and the second inclined surface at a leading end of the chamfered portion. A width of the end face in a thickness direction of the semiconductor substrate is within the range of not less than 50% and not more than 97% of a thickness of the semiconductor substrate.