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公开(公告)号：US09951412B2
公开(公告)日：2018-04-24
申请号：US13809189
申请日：2011-07-27
申请人： Kenichi Nagata , Nobuhito Makino
发明人： Kenichi Nagata , Nobuhito Makino
IPC分类号： C23C14/00 , C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22F1/00 , C22F1/18 , C22C27/02 , H01J37/34
CPC分类号： C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22C27/02 , C22F1/00 , C22F1/18 , C22F1/183 , C23C14/3414 , C23C14/3471 , H01J37/3426 , H01J37/3464 , H01J37/3491 , H01J37/3497 , Y10T29/49865
摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.
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公开(公告)号：US20140158532A1
公开(公告)日：2014-06-12
申请号：US14235865
申请日：2012-09-05
IPC分类号： C23C14/14
CPC分类号： C23C14/14 , C22C9/05 , C23C14/3414 , H01J37/3426
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided.
摘要翻译： 提供了一种高纯度铜 - 锰合金溅射靶，其包含0.05-20重量％ Mn为2重量ppm以下，余量为Cu和不可避免的杂质，其中，在通过溅射靶材在晶片上形成膜时，由C组成的微粒数，选自Mn中的至少一种元素 ，Si和Mg，或由C和至少一种选自Mn，Si和Mg的元素组成的化合物，直径为0.20μm以上的化合物的平均值为30以下。 通过向铜中添加适量的Mn元素并控制碳的量，能够有效地抑制溅射时的粒子产生。 特别地，提供了可用于形成具有自扩散抑制功能的半导体铜合金线的高纯度铜 - 锰合金溅射靶。
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公开(公告)号：US20140097084A1
公开(公告)日：2014-04-10
申请号：US14118591
申请日：2012-09-06
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C9/05 , C22F1/00 , C22F1/08
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.
摘要翻译： 提供了包含0.05〜20重量％的Mn，余量为Cu和不可避免的杂质的高纯度铜 - 锰合金溅射靶。 高纯度铜锰合金溅射靶的特征在于靶的Mn浓度的面内变化（CV值）为3％以下。 因此，通过向铜中添加适量的Mn元素并降低溅射靶的面内变化，可以形成具有优异均匀性的薄膜。 特别是提供了一种高纯度的铜 - 锰合金溅射靶，其可用于提高在细化和集成度方面取得进步的半导体产品的产率和可靠性。
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公开(公告)号：US20120135160A1
公开(公告)日：2012-05-31
申请号：US13355603
申请日：2012-01-23
申请人： Nobuhito Makino
发明人： Nobuhito Makino
CPC分类号： H05K3/388 , H05K1/0346 , H05K3/381 , H05K2201/0154 , H05K2203/095 , Y10T428/12472
摘要： A non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer fanned on the tie-coat layer is provided. A ratio (T/Rz) of a tie-coat layer thickness (T) to a 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is made to be 2 or more. This improves initial adhesion, which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), and also increases adhesion of the laminate after heat aging (i.e., after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). A method of manufacturing the laminate is also provided.
摘要翻译： 提供一种非粘合型柔性层压体，其包括具有至少一个表面的聚酰亚胺膜进行等离子体处理，形成在等离子体处理表面上的接合层和在接合层上扇形的金属导体层 。 将等离子体处理的聚酰亚胺膜表面的粘结层厚度（T）与10点平均粗糙度（Rz）的比率（T / Rz）设定为2以上。 这提高了初始粘合性，其是非粘合型柔性层压材料（特别是两层柔性层压材料）的粘合强度的指示剂，并且还增加了热老化后的层压体的粘附性（即，在允许之后） 在大气中在150℃下放置168小时168小时）。 还提供了制造层压板的方法。
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公开(公告)号：US20100323215A1
公开(公告)日：2010-12-23
申请号：US12525871
申请日：2008-02-01
申请人： Nobuhito Makino
发明人： Nobuhito Makino
IPC分类号： B32B15/088 , C09J5/02
CPC分类号： H05K3/388 , H05K1/0346 , H05K3/381 , H05K2201/0154 , H05K2203/095 , Y10T428/12472
摘要： The present invention relates to a non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer formed on the tie-coat layer, wherein a proportion (T/Rz) of the tie-coat layer thickness (T) to 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is 2 or more. An object of the invention is not only to improve initial adhesion which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), but also to increase adhesion of the laminate after heat aging (after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere).
摘要翻译： 本发明涉及一种非粘合型柔性层压体，其包括具有等离子体处理的至少一个表面的聚酰亚胺膜，形成在等离子体处理表面上的粘结层以及形成在该领带上的金属导体层 涂层厚度（T）与等离子体处理的聚酰亚胺膜表面的10点平均粗糙度（Rz）的比例（T / Rz）为2以上。 本发明的目的不仅是提高作为非粘合型柔性层压体（特别是两层柔性层压体）的粘合强度的指标的初始粘合性，而且还增加层压体之后的粘合力 热老化（在大气中在150℃下放置168小时168小时）。
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公开(公告)号：US20070163504A1
公开(公告)日：2007-07-19
申请号：US10589348
申请日：2005-02-15
申请人： Eiichi Shimizu , Nobuhito Makino , Manabu Kawabe
发明人： Eiichi Shimizu , Nobuhito Makino , Manabu Kawabe
IPC分类号： C23C16/00
CPC分类号： C30B25/10 , C23C16/4583
摘要： It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.
摘要翻译： 本发明提供一种气相生长装置，其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器，安装在反应器内的晶片容纳构件（晶片保持器），并且在其表面上具有用于保持晶片的晶片安装部分（凹穴），气体供给构件 用于向晶片供应原料气体的加热构件（加热器），用于保持晶片容纳构件的热均匀化构件（基座），并且来自加热构件的均匀化热量，其中提供原料气体 在高温环境下进入反应器，同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片，以形成在晶片的表面上生长的膜，并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。
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公开(公告)号：US09704695B2
公开(公告)日：2017-07-11
申请号：US14348174
申请日：2012-09-12
CPC分类号： H01J37/3435 , B21D53/00 , C22C9/05 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3426
摘要： A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.
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8.发明授权Metal covered polyimide composite, process for producing the composite, and process for producing electronic circuit board 有权金属覆盖的聚酰亚胺复合材料，复合材料的制造工艺和电子电路板的制造工艺公开(公告)号：US08568899B2
公开(公告)日：2013-10-29
申请号：US12738098
申请日：2008-09-16
IPC分类号： B32B15/04 , B32B15/08 , B32B15/20 , B05D1/18 , C23C14/18 , C23C14/20 , C23C28/02 , C25D5/10 , C25D5/56 , C25D5/48
CPC分类号： C25D5/10 , C23C18/1653 , C23C28/021 , C23C28/023 , C23C28/028 , C25D5/56 , C25D7/06 , H05K1/0393 , H05K1/09 , H05K3/388 , H05K2201/0154 , H05K2201/0338 , H05K2203/0723 , Y10T428/12569 , Y10T428/12847 , Y10T428/12903 , Y10T428/1291 , Y10T428/265 , Y10T428/31681 , Y10T428/31721
摘要： Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer comprises three layers to one layer of the copper layer or copper alloy layer, and there is a concentrated portion of impurities at the boundary of the copper layer or copper alloy layer when the copper layer or copper alloy layer is three layers to two layers, and there is no concentrated portion of impurities when the copper layer or copper alloy layer is a single layer. Additionally provided are a method of producing the composite and a method of producing an electronic circuit board.
摘要翻译： 本发明提供一种金属覆盖聚酰亚胺复合体，其通过无电镀或干燥法形成在聚酰亚胺膜的表面上的接合层和金属种子层，以及通过电镀形成在其上的铜层或铜合金层，其中， 铜镀层或铜合金镀层包括三层至一层的铜层或铜合金层，并且当铜层或铜合金层的铜层或铜合金层的边界处存在杂质的集中部分 铜层或铜合金层为单层时，为3层〜2层，不存在杂质浓缩部。 另外提供了制造复合材料的方法和制造电子电路板的方法。
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9.发明申请公开(公告)号：US20120132531A1
公开(公告)日：2012-05-31
申请号：US13365429
申请日：2012-02-03
CPC分类号： C23C28/023 , C23C18/1601 , C23C18/1653 , C23C28/021 , C23C28/028 , C25D5/10 , C25D7/0635 , H05K1/0346 , H05K3/022 , H05K3/241 , H05K3/388 , H05K2201/0154 , H05K2203/1476 , H05K2203/1545 , Y10T428/12847 , Y10T428/12903 , Y10T428/1291
摘要： A metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method is provided. A copper layer or a copper alloy layer is formed thereon by electroplating. The copper plated layer or copper alloy plated layer includes three layers to one layer of the copper layer or copper alloy layer. The metal covered polyimide composite effectively prevents peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), and more particularly, effectively inhibits peeling from the interface of a copper layer and tin plating. A method of producing the composite and apparatus for producing the composite are also provided.
摘要翻译： 提供了一种金属覆盖的聚酰亚胺复合材料，其包括通过无电镀或干燥方法形成在聚酰亚胺膜的表面上的接合层和金属种子层。 通过电镀在其上形成铜层或铜合金层。 铜镀层或铜合金镀层包括三层到一层铜层或铜合金层。 金属覆盖的聚酰亚胺复合物有效地防止了非粘合性柔性层压体（特别是双层柔性层压体）中的剥离，更具体地，有效地抑制了从铜层和锡镀层的界面的剥离。 还提供了一种生产该复合材料的方法和该复合材料的制造装置。
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公开(公告)号：US07670434B2
公开(公告)日：2010-03-02
申请号：US10589348
申请日：2005-02-15
申请人： Eiichi Shimizu , Nobuhito Makino , Manabu Kawabe
发明人： Eiichi Shimizu , Nobuhito Makino , Manabu Kawabe
CPC分类号： C30B25/10 , C23C16/4583
摘要： It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.
摘要翻译： 本发明提供一种气相生长装置，其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器，安装在反应器内的晶片容纳构件（晶片保持器），并且在其表面上具有用于保持晶片的晶片安装部分（凹穴），气体供给构件 用于向晶片供应原料气体的加热构件（加热器），用于保持晶片容纳构件的热均匀化构件（基座），并且来自加热构件的均匀化热量，其中提供原料气体 在高温环境下进入反应器，同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片，以形成在晶片的表面上生长的膜，并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。
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