公开(公告)号：US11362577B2

公开(公告)日：2022-06-14

申请号：US16828747

申请日：2020-03-24

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Santosh Sharma ,  Daniel Marvin Kinzer

IPC分类号： H02M1/08 ,  H02M3/158 ,  H03K17/081

摘要： A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

公开(公告)号：US10461161B1

公开(公告)日：2019-10-29

申请号：US15878309

申请日：2018-01-23

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer

IPC分类号： H01L29/40 ,  H01L29/778 ,  H01L29/20

摘要： A lateral transistor includes a source a gate and a drain connection to a transition layer within a semiconductor substrate. One or more capacitively coupled floating field plates are connected to the source connection such that the source voltage is uniformly distributed across the field plates.

公开(公告)号：US20190158086A1

公开(公告)日：2019-05-23

申请号：US15961781

申请日：2018-04-24

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H03K17/687 ,  H03K19/0175 ,  H02M1/36 ,  H02M1/38 ,  H02M3/158

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.

公开(公告)号：US10044350B1

公开(公告)日：2018-08-07

申请号：US15700039

申请日：2017-09-08

申请人： Navitas Semiconductor, Inc.

发明人： Thomas Ribarich ,  Ju Zhang

IPC分类号： H02M7/217 ,  H03K17/082 ,  H03K17/691 ,  H03K17/06 ,  H03K9/08 ,  H03K17/62

摘要： A power drive circuit is disclosed. The power circuit includes: a pulse detector, configured to generate first and second control signals in response to first and second pulse signals, respectively. The power drive circuit also includes a state storage device, configured to generate first and second driver input signals in response to the first and second control signals, respectively. The power drive circuit also includes a driver configured to generate first and second gate drive signals in response to the first and second driver input signals, respectively. The power drive circuit also includes a power switch, configured to receive the first and second gate drive signals, where the first and second gate drive signals control the power switch to selectively conduct or not conduct current between first and second terminals.

公开(公告)号：US09859732B2

公开(公告)日：2018-01-02

申请号：US14667319

申请日：2015-03-24

申请人： NAVITAS SEMICONDUCTOR INC.

发明人： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC分类号： H02J7/00 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H02M1/00

CPC分类号： H02J7/0052 ,  H01L23/528 ,  H01L25/072 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L2924/00 ,  H01L2924/0002 ,  H02M1/088 ,  H02M3/155 ,  H02M3/157 ,  H02M3/1584 ,  H02M3/1588 ,  H02M2001/0048 ,  H03K3/012 ,  H03K3/356017 ,  H03K17/102 ,  H03K19/018507 ,  Y02B70/1466 ,  Y02B70/1483

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

公开(公告)号：US20170163258A1

公开(公告)日：2017-06-08

申请号：US15431641

申请日：2017-02-13

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H03K17/687 ,  H02M3/158 ,  H02M1/38 ,  H03K19/0175 ,  H02M1/36

CPC分类号： H03K17/687 ,  H02M1/08 ,  H02M1/36 ,  H02M1/38 ,  H02M3/1588 ,  H03K19/017509 ,  H03K2217/0063 ,  H03K2217/0072 ,  Y02B70/1466 ,  Y02B70/1483

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.

公开(公告)号：US20170155391A1

公开(公告)日：2017-06-01

申请号：US15431632

申请日：2017-02-13

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H03K19/0185 ,  H01L23/528 ,  H01L29/40 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20 ,  H01L27/088

CPC分类号： H02J7/0052 ,  H01L23/528 ,  H01L25/072 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L2924/00 ,  H01L2924/0002 ,  H02M1/088 ,  H02M3/155 ,  H02M3/157 ,  H02M3/1584 ,  H02M3/1588 ,  H02M2001/0048 ,  H03K3/012 ,  H03K3/356017 ,  H03K17/102 ,  H03K19/018507 ,  Y02B70/1466 ,  Y02B70/1483

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

公开(公告)号：US09640471B2

公开(公告)日：2017-05-02

申请号：US15050338

申请日：2016-02-22

申请人： NAVITAS SEMICONDUCTOR INC.

发明人： Daniel M. Kinzer

IPC分类号： H01L29/15 ,  H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L25/07 ,  H01L25/16

CPC分类号： H01L23/49575 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49589 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05014 ,  H01L2224/05554 ,  H01L2224/0612 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48479 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1425 ,  H01L2924/1426 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H02M3/158 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2924/00

摘要： Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ “L” shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.

公开(公告)号：US09577530B1

公开(公告)日：2017-02-21

申请号：US15356425

申请日：2016-11-18

申请人： NAVITAS SEMICONDUCTOR, INC.

发明人： Tom Ribarich ,  Jason Zhang

IPC分类号： H02M3/158 ,  H02M1/42 ,  H02M1/44

CPC分类号： H02M3/158 ,  H02M3/1588 ,  H02M2001/0058 ,  Y02B70/1466 ,  Y02B70/1491

摘要： A power converter circuit is disclosed. The circuit includes a capacitor connected across first and second output terminals, an inductor configured to receive current from a power source, and a main switch configured to selectively conduct current from the inductor to a ground. The circuit also includes a diode configured to conduct current from the inductor to the capacitor, and a second switch connected in parallel with the diode, where the second switch is configured to selectively conduct current from the capacitor to the inductor.

摘要翻译： 公开了一种功率转换器电路。 电路包括连接在第一和第二输出端子之间的电容器，被配置为从电源接收电流的电感器和被配置为选择性地将电流从电感器导通到地的主开关。 电路还包括被配置为将电流从电感器传导到电容器的二极管，以及与二极管并联连接的第二开关，其中第二开关被配置为选择性地将电流从电容器传导到电感器。

公开(公告)号：US09570927B2

公开(公告)日：2017-02-14

申请号：US14728874

申请日：2015-06-02

申请人： Navitas Semiconductor, Inc.

发明人： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC分类号： H03L5/00 ,  H02J7/00 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H02M1/00

CPC分类号： H02J7/0052 ,  H01L23/528 ,  H01L25/072 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L2924/00 ,  H01L2924/0002 ,  H02M1/088 ,  H02M3/155 ,  H02M3/157 ,  H02M3/1584 ,  H02M3/1588 ,  H02M2001/0048 ,  H03K3/012 ,  H03K3/356017 ,  H03K17/102 ,  H03K19/018507 ,  Y02B70/1466 ,  Y02B70/1483

摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

摘要翻译： 基于GaN的半桥功率转换电路采用单片集成在与功率晶体管相同的器件上的控制，支持和逻辑功能。 在一些实施例中，低边GaN器件通过一个或多个电平移位电路与高侧GaN器件通信。 高侧和低侧设备都可以具有一个或多个集成的控制，支持和逻辑功能。 一些器件采用在基于GaN的器件中形成的静电放电电路和特征，以提高半桥功率转换电路的可靠性和性能。