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1.发明申请公开(公告)号：US20120212962A1
公开(公告)日：2012-08-23
申请号：US13504344
申请日：2010-10-22
Applicant: Atsuo Yasumori , Tetsuo Kishi , Naoko Matsui
Inventor： Atsuo Yasumori , Tetsuo Kishi , Naoko Matsui
CPC classification number: C03C3/089 , C03C4/12 , C03C14/004 , C03C2214/08
Abstract: Provided is a light-emitting glass which is applicable to, e.g., white illuminators including a light-emitting diode as a light source, and which emits light of a warm white color when irradiated with near ultraviolet light and combines long-term weatherability with high heat resistance. Also provided are a light-emitting device equipped with the light-emitting glass and a process for producing the light-emitting glass. The light-emitting glass includes, as the base glass, borosilicate or silicate glass having a separated-phase structure, whereby the base glass is efficiently doped with, for example, transition metal ion clusters which emit light of a warm white color upon irradiation with near ultraviolet light. With this glass, it is possible to attain increases in excitation wavelength and emission wavelength. The glass thus emits, based on a multiple scattering effect, high-intensity light of a warm white color upon irradiation with near ultraviolet light. Furthermore, since the light-emitting glass includes borosilicate or silicate glass, which is a common glass material, as the constituent material, it is possible to inexpensively provide a fluorescent material combining long-term weatherability with respect to ultraviolet rays, etc. with resistance to high temperatures.
Abstract translation: 提供了一种发光玻璃，其可应用于例如包括发光二极管作为光源的白色照明器，并且当用近紫外光照射时发出暖白色的光，并将长期耐候性与高 耐热性。 还提供了配备有发光玻璃的发光装置和发光玻璃的制造方法。 作为基底玻璃，发光玻璃具有分离相结构的硼硅酸盐玻璃或硅酸玻璃，由此基底玻璃有效地掺杂有例如在照射时发出暖白色光的过渡金属离子簇 近紫外线。 利用该玻璃，可以获得激发波长和发射波长的增加。 因此，基于多次散射效应，玻璃在近紫外光照射时发出暖白色高强度光。 此外，由于发光玻璃包含作为普通玻璃材料的硼硅酸盐玻璃或硅酸盐玻璃作为构成材料，所以可以廉价地提供结合长期耐候性的紫外线等具有电阻的荧光材料 到高温。
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公开(公告)号：US20100103680A1
公开(公告)日：2010-04-29
申请号：US12606211
申请日：2009-10-27
Applicant: Tsuyoshi OYAIZU , Seiko Kawashima , Haruki Takei , Naoko Matsui
Inventor： Tsuyoshi OYAIZU , Seiko Kawashima , Haruki Takei , Naoko Matsui
CPC classification number: F21V29/70 , F21K9/00 , F21Y2105/10 , F21Y2115/10 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H05K1/0203 , H05K1/0274 , H05K1/053 , H05K2201/0195 , H05K2201/10106 , H05K2201/2054 , H05K2203/1476 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting module includes a substrate, a wiring pattern, and a light-emitting device that generates heat. The substrate includes a metal base and an insulating base that is stacked on the metal base and has a mount surface on the opposite side of the metal base. The insulating base has a plurality of insulating layers stacked on one another. The wiring pattern is provided on the mount surface of the substrate. The light-emitting device is mounted on the mount surface of the substrate and is electrically connected to the wiring pattern.
Abstract translation: 发光模块包括基板，布线图案和产生热量的发光装置。 衬底包括金属基底和绝缘基底，该绝缘基底层堆叠在金属基底上并且在金属基底的相对侧具有安装表面。 绝缘基底具有彼此堆叠的多个绝缘层。 布线图案设置在基板的安装表面上。 发光装置安装在基板的安装表面上并与布线图形电连接。
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3.发明授权公开(公告)号：US08403536B2
公开(公告)日：2013-03-26
申请号：US12606211
申请日：2009-10-27
Applicant: Tsuyoshi Oyaizu , Seiko Kawashima , Haruki Takei , Naoko Matsui
Inventor： Tsuyoshi Oyaizu , Seiko Kawashima , Haruki Takei , Naoko Matsui
CPC classification number: F21V29/70 , F21K9/00 , F21Y2105/10 , F21Y2115/10 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H05K1/0203 , H05K1/0274 , H05K1/053 , H05K2201/0195 , H05K2201/10106 , H05K2201/2054 , H05K2203/1476 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting module includes a substrate, a wiring pattern, and a light-emitting device that generates heat. The substrate includes a metal base and an insulating base that is stacked on the metal base and has a mount surface on the opposite side of the metal base. The insulating base has a plurality of insulating layers stacked on one another. The wiring pattern is provided on the mount surface of the substrate. The light-emitting device is mounted on the mount surface of the substrate and is electrically connected to the wiring pattern.
Abstract translation: 发光模块包括基板，布线图案和产生热量的发光装置。 衬底包括金属基底和绝缘基底，该绝缘基底层堆叠在金属基底上并且在金属基底的相对侧具有安装表面。 绝缘基底具有彼此堆叠的多个绝缘层。 布线图案设置在基板的安装表面上。 发光装置安装在基板的安装表面上并与布线图形电连接。
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公开(公告)号：US20120145671A1
公开(公告)日：2012-06-14
申请号：US13392126
申请日：2010-08-25
Applicant: Ryo Matsuhashi , Hiroshi Akasaka , Yoshimitsu Kodaira , Atsushi Sekiguchi , Naoko Matsui
Inventor： Ryo Matsuhashi , Hiroshi Akasaka , Yoshimitsu Kodaira , Atsushi Sekiguchi , Naoko Matsui
CPC classification number: H01J37/3266 , H01J37/321
Abstract: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthen the replacement cycle of the discharge vessel.A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at is closed end portion a protrusion 15 projecting toward the processing chamber 2.
Abstract translation: 本发明提供一种等离子体处理装置，其减少了在放电容器中产生的等离子体的损伤，并延长了放电容器的更换周期。 等离子体处理装置1设置有分隔处理空间的处理室2，一端朝向处理室2内侧开口而另一端封闭的放电室3，设置在放电容器3周围的天线4和 产生感应电场，在减压下在放电容器3内产生等离子体;以及电磁体9，其布置在放电容器3的周围，并在放电容器3内形成发散磁场。放电容器3具有闭合端 将朝向处理室2突出的突起部分15分开。
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公开(公告)号：US20110256642A1
公开(公告)日：2011-10-20
申请号：US13087054
申请日：2011-04-14
Applicant: Naoko Matsui , Eiji Ozaki , Hiroshi Akasaka
Inventor： Naoko Matsui , Eiji Ozaki , Hiroshi Akasaka
IPC: H01L21/20
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/093
Abstract: The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on a multilayered structure by a plasma CVD apparatus in which a plasma source and a film deposition chamber are separated from each other by a partition wall plate. According to the present method, it is possible to deposit the protective layer without inviting the degradation of a magnetic characteristic and also to perform low temperature film deposition even at a temperature lower than 150° C. Hence, it is possible to deposit the protective layer while leaving resist and also to reduce the number of steps in the manufacturing of the magneto-resistance effect element having a multilayered structure.
Abstract translation: 本发明提供了一种磁阻效应元件的制造方法，其中可以扩大所形成的膜的台阶覆盖率，并且还可以在低温范围内沉积膜。 在本发明的一个实施例中，通过等离子体CVD装置在多层结构上形成绝缘保护层，其中等离子体源和成膜室通过分隔壁彼此分开。 根据本方法，可以在不引起磁特性劣化的情况下沉积保护层，并且即使在低于150℃的温度下也可进行低温膜沉积。因此，可以将保护层 同时留下抗蚀剂，并且还减少制造具有多层结构的磁阻效应元件的步骤数。
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Patent Agency Ranking
公开(公告)号：US20080277377A1
公开(公告)日：2008-11-13
申请号：US12219117
申请日：2008-07-16
Applicant: Isao Nakatani , Kimiko Mashimo , Naoko Matsui
Inventor： Isao Nakatani , Kimiko Mashimo , Naoko Matsui
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , C23F4/00 , G11B5/3116 , G11B5/3163 , G11B5/3909 , H01F41/308 , H01L21/0332 , H01L21/32136 , H01L21/32139 , H01L43/12 , Y10T29/49021 , Y10T29/49052
Abstract: The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.
Abstract translation: 本发明的目的是提供一种用于干蚀刻的掩模材料，其适用于细小的几nm的薄膜的细微处理，例如构成TMR膜的NiFe或CoFe，并且能够简化制造方法 TMR元素，降低与设备和材料相关的生产成本。 该目的通过使用一氧化碳和含氮化合物的混合气体作为蚀刻气体的用于干法蚀刻磁性材料的掩模材料来解决，该蚀刻气体包括具有熔点或沸点的金属（钽，钨，锆或铪） 在将其转化成氮化物或碳化物时增加。
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公开(公告)号：US20070119811A1
公开(公告)日：2007-05-31
申请号：US11601737
申请日：2006-11-20
Applicant: Isao Nakatani , Kimiko Mashimo , Naoko Matsui
Inventor： Isao Nakatani , Kimiko Mashimo , Naoko Matsui
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , C23F4/00 , G11B5/3116 , G11B5/3163 , G11B5/3909 , H01F41/308 , H01L21/0332 , H01L21/32136 , H01L21/32139 , H01L43/12 , Y10T29/49021 , Y10T29/49052
Abstract: The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.
Abstract translation: 本发明的目的是提供一种用于干蚀刻的掩模材料，其适用于细小的几nm的薄膜的细微处理，例如构成TMR膜的NiFe或CoFe，并且能够简化制造方法 TMR元素，降低与设备和材料相关的生产成本。 该目的通过使用一氧化碳和含氮化合物的混合气体作为蚀刻气体的用于干法蚀刻磁性材料的掩模材料来解决，该蚀刻气体包括具有熔点或沸点的金属（钽，钨，锆或铪） 在将其转化成氮化物或碳化物时增加。
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8.发明授权公开(公告)号：US09018115B2
公开(公告)日：2015-04-28
申请号：US13504344
申请日：2010-10-22
Applicant: Atsuo Yasumori , Tetsuo Kishi , Naoko Matsui
Inventor： Atsuo Yasumori , Tetsuo Kishi , Naoko Matsui
CPC classification number: C03C3/089 , C03C4/12 , C03C14/004 , C03C2214/08
Abstract: Provided is a light-emitting glass which is applicable to, e.g., white illuminators including a light-emitting diode as a light source, and which emits light of a warm white color when irradiated with near ultraviolet light and combines long-term weatherability with high heat resistance; a light-emitting device containing same and a process for producing same. The light-emitting glass includes, as the base glass, borosilicate or silicate glass having a separated-phase structure, whereby the base glass is efficiently doped with, for example, transition metal ion clusters which emit light of a warm white color upon irradiation with near ultraviolet light. With this glass, it is possible to attain increases in excitation wavelength and emission wavelength. The glass thus emits, based on a multiple scattering effect, high-intensity light of a warm white color upon irradiation with near ultraviolet light.
Abstract translation: 提供了一种发光玻璃，其可应用于例如包括发光二极管作为光源的白色照明器，并且当用近紫外光照射时发出暖白色的光，并将长期耐候性与高 耐热性; 含有该发光装置的发光装置及其制造方法。 作为基底玻璃，发光玻璃具有分离相结构的硼硅酸盐玻璃或硅酸玻璃，由此基底玻璃有效地掺杂有例如在照射时发出暖白色光的过渡金属离子簇 近紫外线。 利用该玻璃，可以获得激发波长和发射波长的增加。 因此，基于多次散射效应，玻璃在近紫外光照射时发出暖白色高强度光。
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公开(公告)号：US08524094B2
公开(公告)日：2013-09-03
申请号：US12219117
申请日：2008-07-16
Applicant: Isao Nakatani , Kimiko Mashimo , Naoko Matsui
Inventor： Isao Nakatani , Kimiko Mashimo , Naoko Matsui
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , C23F4/00 , G11B5/3116 , G11B5/3163 , G11B5/3909 , H01F41/308 , H01L21/0332 , H01L21/32136 , H01L21/32139 , H01L43/12 , Y10T29/49021 , Y10T29/49052
Abstract: The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.
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10.发明申请DRY ETCHING METHOD, MAGNETO-RESISTIVE ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME 审中-公开干蚀刻方法，磁阻元件及其制造方法和装置公开(公告)号：US20100310902A1
公开(公告)日：2010-12-09
申请号：US12819691
申请日：2010-06-21
Applicant: Tomoaki Osada , Naoko Matsui , Yoshimitsu Kodaira , Koji Tsunekawa
Inventor： Tomoaki Osada , Naoko Matsui , Yoshimitsu Kodaira , Koji Tsunekawa
CPC classification number: H01L21/67069 , C23F4/00 , G11B5/3163 , G11B5/3906 , H01F41/34 , H01J37/321 , H01J37/3266 , H01J37/3408 , H01J37/3414 , H01J37/3429 , H01J37/3447 , H01L21/32136 , H01L43/12
Abstract: In a method of manufacturing a magneto-resistance element having a multi-layer film including magnetic layers, TaOx generated on the surface of the Ta mask is prevented from peeling off when etching is performed on the multi-layer film using an etching gas containing oxygen atoms.When a Ta mask which is used at the time of dry etching performed on the multi-layer film including magnetic layers with an etching gas containing oxygen atoms is formed by sputtering, the Ar gas pressure is set to be 0.1 Pa to 0.4 Pa.
Abstract translation: 在制造具有包含磁性层的多层膜的磁阻元件的方法中，使用含有氧的蚀刻气体对多层膜进行蚀刻时，防止在Ta掩模的表面上产生的TaO x剥离 原子 当通过溅射形成在包含含有氧原子的蚀刻气体的磁性层的多层膜上进行干法蚀刻时使用的Ta掩模，将Ar气体压力设定为0.1Pa〜0.4Pa。
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