Semiconductor package
    1.
    发明授权

    公开(公告)号:US11276632B2

    公开(公告)日:2022-03-15

    申请号:US16724889

    申请日:2019-12-23

    申请人: NEPES CO., LTD.

    摘要: A semiconductor package includes a semiconductor chip including a chip pad on a first surface thereof, an external pad electrically connected to the chip pad of the semiconductor chip, an external connection terminal covering the external pad, and an intermediate layer between the external pad and the external connection terminal, the intermediate layer including a third metal material that is different from a first metal material included in the external pad and a second metal material included in the external connection terminal.

    SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210193602A1

    公开(公告)日:2021-06-24

    申请号:US17121804

    申请日:2020-12-15

    申请人: Nepes CO., LTD.

    IPC分类号: H01L23/00

    摘要: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a lower structure including a semiconductor chip having a chip terminal; an external connection terminal connecting the semiconductor chip to an external device, and an intermediate connection structure including an upper surface and a lower surface opposite to the upper surface, and positioned between the lower structure and the external connection terminal.

    Semiconductor package and method of manufacturing same

    公开(公告)号:US10964656B2

    公开(公告)日:2021-03-30

    申请号:US16427033

    申请日:2019-05-30

    申请人: Nepes CO., LTD.

    IPC分类号: H01L23/00

    摘要: The present invention relates to a semiconductor package and a method of manufacturing the same. In a semiconductor package which electrically connects a semiconductor chip and a printed circuit board using a solder ball, the semiconductor package further includes a thermal buffer layer which is positioned on a semiconductor chip, absorbs and disperse heat generated by the semiconductor chip, increases a distance between the semiconductor chip and a printed circuit board to decrease a deviation of a heat conduction process, and has a thickness ranging from 7.5 to 50% of a diameter of a solder ball.

    SEMICONDUCTOR PACKAGE
    4.
    发明申请

    公开(公告)号:US20190229101A1

    公开(公告)日:2019-07-25

    申请号:US16242572

    申请日:2019-01-08

    申请人: NEPES CO., LTD.

    发明人: Jun Kyu Lee

    摘要: A semiconductor package includes a first package including a first semiconductor chip, a first encapsulation layer that covers the first semiconductor chip, and a first redistribution pattern connected to pads of the first semiconductor chip and a second package on the first package, the second package including a second semiconductor chip, a second encapsulation layer that covers the second semiconductor chip, and a second redistribution pattern connected to pads of the second semiconductor chip. The first redistribution pattern is connected to the second redistribution pattern through the first encapsulation layer.

    SEMICONDUCTOR COMPRISING REDISTRIBUTION STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20230128862A1

    公开(公告)日:2023-04-27

    申请号:US17938672

    申请日:2022-10-06

    申请人: NEPES CO., LTD.

    摘要: Provided is a semiconductor package including a redistribution structure including at least one redistribution insulating layer and at least one redistribution pattern, at least one semiconductor chip located on the redistribution structure, and a molding layer located on the redistribution structure and covering the at least one semiconductor chip. The redistribution pattern includes a redistribution via passing through the redistribution insulating layer and extending in a first direction perpendicular to a top surface of the redistribution structure, and a redistribution line extending in a second direction parallel to the top surface of the redistribution structure. Inner side walls of the redistribution via have a certain inclination, and a difference between a thickness of a central portion of the redistribution line and a thickness of an edge of the redistribution line ranges from 1% to 10% of the thickness of the central portion of the redistribution line.