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    Structure and method for formation of cladded interconnects for MRAMs
    2.
    发明授权
    Structure and method for formation of cladded interconnects for MRAMs 失效
    用于形成MRAM的包层互连的结构和方法

    公开(公告)号：US07442647B1

    公开(公告)日：2008-10-28

    申请号：US12043129

    申请日：2008-03-05

    申请人： Sivananda Kanakasabapathy ,  Eugene J. O'Sullivan ,  Michael Christopher Gaidis ,  Michael Francis Lofaro

    发明人： Sivananda Kanakasabapathy ,  Eugene J. O'Sullivan ,  Michael Christopher Gaidis ,  Michael Francis Lofaro

    IPC分类号： H01L21/311

    CPC分类号： H01L43/12 ,  H01L21/76844 ,  H01L21/76849 ,  H01L27/222

    摘要： A structure and method for fabricating a top strap in a magnetic random access memory, MRAM, comprising a damascene process forming a trench in a dielectric layer and resulting in a metal conductor clad on three sides by an inverted U-shape trench liner and cap made up of three layers consisting of a stack of a ferromagnetic material sandwiched between two layers of a refractory metal or an alloy of a refractory metal. First the two sidewalls of the trench are formed with the cladding layer, followed by filling the trench with the metal conductor. In preparing the structure for the capping layer, the metal conductor is recessed with an etch that is selective to the metal conductor over the sidewall stack. This preparation may be performed on selected metal filled trenches and blocked on others, such that after a final polishing step, only those metal conductors that received the recess operation will have the capping layer.

    摘要翻译： 一种用于制造磁性随机存取存储器中的顶带的结构和方法，MRAM，包括在电介质层中形成沟槽的镶嵌工艺，并且通过倒置的U形沟槽衬垫和盖制成三面包覆金属导体 三层由夹在两层难熔金属或耐火金属合金之间的铁磁材料堆叠组成。 首先，用覆层形成沟槽的两个侧壁，然后用金属导体填充沟槽。 在制备覆盖层的结构时，金属导体以对侧壁叠层上的金属导体有选择性的蚀刻凹陷。 该制备方法可以在所选择的金属填充沟槽上进行，并且在其它金属填充沟槽上进行封闭，使得在最终抛光步骤之后，只有接收到凹陷操作的那些金属导体将具有覆盖层。

    Stacked Magnetic Devices
    4.
    发明申请
    Stacked Magnetic Devices 失效
    堆叠式磁性器件

    公开(公告)号：US20090279354A1

    公开(公告)日：2009-11-12

    申请号：US12504860

    申请日：2009-07-17

    申请人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Christopher Gaidis, III

    发明人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Christopher Gaidis, III

    IPC分类号： G11C11/14

    CPC分类号： G11C11/15

    摘要： Techniques for improving magnetic device performance are provided. In one aspect, a magnetic device, e.g., a magnetic random access memory device, is provided which comprises a plurality of current carrying lines; and two or more adjacent stacked magnetic toggling devices sharing at least one of the plurality of current carrying lines in common and positioned therebetween. The magnetic device is configured such that at least one of the adjacent magnetic toggling devices toggles mutually exclusively of another of the adjacent magnetic toggling devices. In an exemplary embodiment, the magnetic device comprises a plurality of levels with each of the adjacent stacked magnetic toggling devices residing in a different level.

    摘要翻译： 提供了提高磁性器件性能的技术。 在一个方面，提供一种磁性装置，例如磁性随机存取存储装置，其包括多个载流线; 以及两个或更多个相邻的层叠磁性切换装置，其共同地共享多个载流线中的至少一个并且位于它们之间。 磁性装置被配置成使得至少一个相邻的磁性切换装置互相切换另一个相邻的磁性切换装置。 在示例性实施例中，磁性装置包括多个级别，其中每个相邻的层叠磁性切换装置处于不同的水平。

    Stacked magnetic devices
    5.
    发明授权
    Stacked magnetic devices 失效
    堆叠式磁性器件

    公开(公告)号：US08120946B2

    公开(公告)日：2012-02-21

    申请号：US12504860

    申请日：2009-07-17

    申请人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Christopher Gaidis, III

    发明人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Christopher Gaidis, III

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15

    摘要： Techniques for improving magnetic device performance are provided. In one aspect, a magnetic device, e.g., a magnetic random access memory device, is provided which comprises a plurality of current carrying lines; and two or more adjacent stacked magnetic toggling devices sharing at least one of the plurality of current carrying lines in common and positioned therebetween. The magnetic device is configured such that at least one of the adjacent magnetic toggling devices toggles mutually exclusively of another of the adjacent magnetic toggling devices. In an exemplary embodiment, the magnetic device comprises a plurality of levels with each of the adjacent stacked magnetic toggling devices residing in a different level.

    摘要翻译： 提供了提高磁性器件性能的技术。 在一个方面，提供一种磁性装置，例如磁性随机存取存储装置，其包括多个载流线; 以及两个或更多个相邻的层叠磁性切换装置，其共同地共享多个载流线中的至少一个并且位于它们之间。 磁性装置被配置成使得至少一个相邻的磁性切换装置互相切换另一个相邻的磁性切换装置。 在示例性实施例中，磁性装置包括多个级别，其中每个相邻的层叠磁性切换装置处于不同的水平。

    Device and method for improving interface adhesion in thin film structures
    6.
    发明授权
    Device and method for improving interface adhesion in thin film structures 有权
    用于改善薄膜结构中界面附着力的装置和方法

    公开(公告)号：US07488661B2

    公开(公告)日：2009-02-10

    申请号：US11369391

    申请日：2006-03-07

    申请人： Keith Raymond Milkove ,  Michael Christopher Gaidis

    发明人： Keith Raymond Milkove ,  Michael Christopher Gaidis

    IPC分类号： H01L21/336

    CPC分类号： H01L21/0332 ,  H01L21/02304 ,  H01L21/3083 ,  H01L21/31144 ,  H01L43/12

    摘要： A device and method for improving adhesion for thin film layers includes applying a diblock copolymer on a surface where adhesion to subsequent layers is needed and curing the diblock copolymer. Pores are formed in the diblock copolymer by treating the diblock copolymer with a solvent. The surface is etched through the pores of the diblock copolymer to form adhesion promoting features. The diblock copolymer is removed, and a layer is deposited on the surface wherein the adhesion promoting features are employed to promote adhesion between the layer and the surface.

    摘要翻译： 用于改善薄膜层粘合性的装置和方法包括在需要与后续层粘合的表面上施加二嵌段共聚物并固化二嵌段共聚物。 通过用溶剂处理二嵌段共聚物，在二嵌段共聚物中形成孔。 通过二嵌段共聚物的孔蚀刻该表面以形成附着促进特征。 去除二嵌段共聚物，并且在表面上沉积一层，其中采用粘附促进特征以促进层与表面之间的粘合。