知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.014 seconds)

    Interface for communication between voltage domains
    1.
    发明授权
    Interface for communication between voltage domains 有权
    电压域之间的通信接口

    公开(公告)号：US08818265B2

    公开(公告)日：2014-08-26

    申请号：US13454815

    申请日：2012-04-24

    Applicant: Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    Inventor： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    IPC: H04B5/00 ,  H01L21/70 ,  H01L29/00 ,  H01L21/02 ,  H03K17/00 ,  H04B1/44

    CPC classification number: H04B1/44 ,  H03K17/00

    Abstract: One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

    Abstract translation: 一个或多个实施例提供用于使用电容耦合在不同电压域中工作的电路之间的信号的隔离和通信的电路。 与先前的平行板实现相比，这些实施例利用具有增加的击穿电压的电容结构。 电容隔离由平行板电容结构提供，每个电容结构被实现为具有不同水平尺寸的平行板。 由于水平尺寸的差异，电场最强的平行板的边缘与平行板重叠的区域横向偏移。 结果，平行板之间的击穿电压增加。

    GALVANIC ISOLATION DEVICE AND METHOD
    3.
    发明申请
    GALVANIC ISOLATION DEVICE AND METHOD 有权
    GALVANIC隔离装置和方法

    公开(公告)号：US20120326699A1

    公开(公告)日：2012-12-27

    申请号：US13165868

    申请日：2011-06-22

    Applicant: Maarten Jacobus SWANENBERG ,  Dusan GOLUBOVIC

    Inventor： Maarten Jacobus SWANENBERG ,  Dusan GOLUBOVIC

    IPC: G01R19/00 ,  H01L21/22 ,  H01L29/02

    CPC classification number: H01L27/0266

    Abstract: Various exemplary embodiments relate to an isolation device including a semiconductor layer and an insulation layer. The insulation layer insulates a central portion of the semiconductor layer. A high voltage terminal connects to the insulation layer, a first low voltage terminal connects to a first non-insulated portion of the semiconductor layer, and a second low voltage terminal connects to a second non-insulated portion of the semiconductor layer. The first and second low voltage terminals are electrically connected via the semiconductor layer. A voltage applied to the high voltage terminal influences the conductance of the semiconductor layer. The high voltage terminal is galvanically isolated from the first and second low voltage terminals.

    Abstract translation: 各种示例性实施例涉及包括半导体层和绝缘层的隔离装置。 绝缘层绝缘半导体层的中心部分。 高压端子连接到绝缘层，第一低电压端子连接到半导体层的第一非绝缘部分，第二低电压端子连接到半导体层的第二非绝缘部分。 第一和第二低压端子经由半导体层电连接。 施加到高电压端子的电压影响半导体层的电导。 高压端子与第一和第二低压端子电隔离。

    INTERFACE FOR COMMUNICATION BETWEEN VOLTAGE DOMAINS
    5.
    发明申请
    INTERFACE FOR COMMUNICATION BETWEEN VOLTAGE DOMAINS 有权
    电压域之间的通信接口

    公开(公告)号：US20130281033A1

    公开(公告)日：2013-10-24

    申请号：US13454815

    申请日：2012-04-24

    Applicant: Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    Inventor： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    IPC: H04B1/44

    CPC classification number: H04B1/44 ,  H03K17/00

    Abstract: One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

    Abstract translation: 一个或多个实施例提供用于使用电容耦合在不同电压域中工作的电路之间的信号的隔离和通信的电路。 与先前的平行板实现相比，这些实施例利用具有增加的击穿电压的电容结构。 电容隔离由平行板电容结构提供，每个电容结构被实现为具有不同水平尺寸的平行板。 由于水平尺寸的差异，电场最强的平行板的边缘与平行板重叠的区域横向偏移。 结果，平行板之间的击穿电压增加。

    Galvanic isolation device and method
    6.
    发明授权
    Galvanic isolation device and method 有权
    电隔离装置及方法

    公开(公告)号：US08749223B2

    公开(公告)日：2014-06-10

    申请号：US13165868

    申请日：2011-06-22

    Applicant: Maarten Jacobus Swanenberg ,  Dusan Golubovic

    Inventor： Maarten Jacobus Swanenberg ,  Dusan Golubovic

    IPC: G01R19/00 ,  H01L21/331 ,  H01L21/70

    CPC classification number: H01L27/0266

    Abstract: Various exemplary embodiments relate to an isolation device including a semiconductor layer and an insulation layer. The insulation layer insulates a central portion of the semiconductor layer. A high voltage terminal connects to the insulation layer, a first low voltage terminal connects to a first non-insulated portion of the semiconductor layer, and a second low voltage terminal connects to a second non-insulated portion of the semiconductor layer. The first and second low voltage terminals are electrically connected via the semiconductor layer. A voltage applied to the high voltage terminal influences the conductance of the semiconductor layer. The high voltage terminal is galvanically isolated from the first and second low voltage terminals.

    Abstract translation: 各种示例性实施例涉及包括半导体层和绝缘层的隔离装置。 绝缘层绝缘半导体层的中心部分。 高压端子连接到绝缘层，第一低电压端子连接到半导体层的第一非绝缘部分，第二低电压端子连接到半导体层的第二非绝缘部分。 第一和第二低压端子经由半导体层电连接。 施加到高电压端子的电压影响半导体层的电导。 高压端子与第一和第二低压端子电隔离。

Patent Agency Ranking