Invention Application
US20080265319A1 METHOD OF PROVIDING ENHANCED BREAKDOWN BY DILUTED DOPING PROFILES IN HIGH-VOLTAGE TRANSISTORS
有权
通过高压晶体管中的稀释型配置提供增强型断路的方法
- Patent Title: METHOD OF PROVIDING ENHANCED BREAKDOWN BY DILUTED DOPING PROFILES IN HIGH-VOLTAGE TRANSISTORS
- Patent Title (中): 通过高压晶体管中的稀释型配置提供增强型断路的方法
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Application No.: US11742404Application Date: 2007-04-30
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Publication No.: US20080265319A1Publication Date: 2008-10-30
- Inventor: Paulus J.T. Eggenkamp , Priscilla W.M. Boos , Maarten Jacobus Swanenberg , Rob Van Dalen , Anco Heringa , Adrianus Willem Ludikhuize
- Applicant: Paulus J.T. Eggenkamp , Priscilla W.M. Boos , Maarten Jacobus Swanenberg , Rob Van Dalen , Anco Heringa , Adrianus Willem Ludikhuize
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; G03F7/00
Abstract:
A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described.
Public/Granted literature
- US07790589B2 Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors Public/Granted day:2010-09-07
Information query
IPC分类:
