公开(公告)号：US09253593B2

公开(公告)日：2016-02-02

申请号：US14356466

申请日：2012-06-07

申请人： Kai Ma ,  Jingqun Sun ,  Tianbo Du ,  Zhen Zhang

发明人： Kai Ma ,  Jingqun Sun ,  Tianbo Du ,  Zhen Zhang

IPC分类号： H04B7/00 ,  H04W4/00 ,  H04W76/02 ,  H04W88/04 ,  H04W88/06 ,  H04W28/06

CPC分类号： H04W4/80 ,  H04W28/065 ,  H04W76/15 ,  H04W88/04 ,  H04W88/06

摘要： A method, device and system for transmitting wireless data are disclosed. In the present disclosure, a local mobile terminal not only may exchange information with a base station, but also may exchange information with other mobile terminals by using a short distance transmission system of the mobile terminals, and transmit, by combining Local Area Network (LAN) communication and Wide Area Network (WAN) communication are combined, data simultaneously via an LAN and a WAN. A target mobile terminal may also receive and send data via the LAN and the WAN. The present disclosure can implement multi-channel transmission of wireless data, thus relieving network load greatly and improving the efficiency of data transmission.

摘要翻译： 公开了一种用于发送无线数据的方法，设备和系统。 在本公开中，本地移动终端不仅可以与基站交换信息，而且还可以通过使用移动终端的短距离传输系统与其他移动终端交换信息，并且通过组合局域网（LAN） ）通信和广域网（WAN）通信通过LAN和WAN同时组合在一起。 目标移动终端还可以经由LAN和WAN接收和发送数据。 本公开可以实现无线数据的多信道传输，从而大大减轻网络负载并提高数据传输的效率。

公开(公告)号：US20100267247A1

公开(公告)日：2010-10-21

申请号：US12762425

申请日：2010-04-19

申请人： Kai Ma ,  Yoshitaka Yokota ,  Christopher S. Olsen

发明人： Kai Ma ,  Yoshitaka Yokota ,  Christopher S. Olsen

IPC分类号： H01L21/02

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31662 ,  H01L21/321 ,  H01L21/32105

摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.

摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 二等离子体源用于在等离子体反应器中形成等离子体。 在各种实施例中，不同数量的功率被提供给以第一频率操作的电源和随时间以第二频率操作的电源。

公开(公告)号：US07429532B2

公开(公告)日：2008-09-30

申请号：US11199592

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US07335611B2

公开(公告)日：2008-02-26

申请号：US11199572

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

摘要翻译： 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

公开(公告)号：US07312162B2

公开(公告)日：2007-12-25

申请号：US11131941

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/31

CPC分类号： C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  H01L21/268 ,  H01L21/3146

摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

摘要翻译： 在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过 将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

公开(公告)号：US20140302793A1

公开(公告)日：2014-10-09

申请号：US14356466

申请日：2012-06-07

申请人： Kai Ma ,  Jingqun Sun ,  Tianbo Du ,  Zhen Zhang

发明人： Kai Ma ,  Jingqun Sun ,  Tianbo Du ,  Zhen Zhang

IPC分类号： H04W4/00

CPC分类号： H04W4/80 ,  H04W28/065 ,  H04W76/15 ,  H04W88/04 ,  H04W88/06

摘要： A method, device and system for transmitting wireless data are disclosed. In the present disclosure, a local mobile terminal not only may exchange information with a base station, but also may exchange information with other mobile terminals by using a short distance transmission system of the mobile terminals, and transmit, by combining Local Area Network (LAN) communication and Wide Area Network (WAN) communication are combined, data simultaneously via an LAN and a WAN. A target mobile terminal may also receive and send data via the LAN and the WAN. The present disclosure can implement multi-channel transmission of wireless data, thus relieving network load greatly and improving the efficiency of data transmission.

摘要翻译： 公开了一种用于发送无线数据的方法，设备和系统。 在本公开中，本地移动终端不仅可以与基站交换信息，而且还可以通过使用移动终端的短距离传输系统与其他移动终端交换信息，并且通过组合局域网（LAN） ）通信和广域网（WAN）通信通过LAN和WAN同时组合在一起。 目标移动终端还可以经由LAN和WAN接收和发送数据。 本公开可以实现无线数据的多信道传输，从而大大减轻网络负载并提高数据传输的效率。

公开(公告)号：US08309475B2

公开(公告)日：2012-11-13

申请号：US13343523

申请日：2012-01-04

申请人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

发明人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

IPC分类号： H01L21/26

CPC分类号： H01L21/67248 ,  C23C16/4586 ,  H01L21/68742

摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

摘要翻译： 本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。 本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。 本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。 可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

公开(公告)号：US08097543B2

公开(公告)日：2012-01-17

申请号：US12839282

申请日：2010-07-19

申请人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

发明人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

IPC分类号： H01L21/26

CPC分类号： H01L21/67248 ,  C23C16/4586 ,  H01L21/68742

摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

公开(公告)号：US20090261078A1

公开(公告)日：2009-10-22

申请号：US12240035

申请日：2008-09-29

申请人： KAI MA ,  Abhilash J. Mayur ,  Vijay Parihar

发明人： KAI MA ,  Abhilash J. Mayur ,  Vijay Parihar

IPC分类号： B23K26/08

CPC分类号： H01L21/268 ,  B23K26/0006 ,  B23K26/0876 ,  B23K2103/56

摘要： The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.

摘要翻译： 工件边缘的相邻区域的照射之间的时间通过交织辐射束扫描图案而延长长时间的冷却周期或延迟。 在冷却期间，光束连续地扫描（沿着快轴）两行，间隔大约一半的晶片直径，并且沿着两行之间的距离向后（和沿着慢轴）行进，而辐射 光束源连续生成光束。

公开(公告)号：US20090181553A1

公开(公告)日：2009-07-16

申请号：US12013355

申请日：2008-01-11

申请人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

发明人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

IPC分类号： H01L21/268

CPC分类号： H01L21/67248 ,  C23C16/4586 ,  H01L21/68742

摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

摘要翻译： 本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。 本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。 本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。 可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。