公开(公告)号：US07700465B2

公开(公告)日：2010-04-20

申请号：US10646533

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: H01L21/26

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32412

Abstract: A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.

Abstract translation: 用于将物种离子注入到室中的工件的表面层中的方法包括将工件放置在由室侧壁和面向所述工件的室顶部以及室的一对端口之间限定的室的处理区域中 靠近处理区域大致相对的两侧，并通过腔室外部的导管连接在一起。 该方法还包括向腔室内引入包括待注入物种的工艺气体，并且还从工艺气体中产生等离子体电流并使等离子体电流在包括导管和处理区域的循环折返路径中振荡。

公开(公告)号：US07666464B2

公开(公告)日：2010-02-23

申请号：US10971772

申请日：2004-10-23

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC: C23C14/48 ,  C23C14/54 ,  C23C16/52 ,  C23C16/505

CPC classification number: H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

Abstract translation: 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， ，然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US07428915B2

公开(公告)日：2008-09-30

申请号：US11115956

申请日：2005-04-26

Applicant: Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

IPC: F16K11/052

CPC classification number: F16K1/526 ,  F16K1/22 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/87531

Abstract: A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.

Abstract translation: 具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口 所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一 和第二阀间隙。 第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。

公开(公告)号：US07422775B2

公开(公告)日：2008-09-09

申请号：US11131899

申请日：2005-05-17

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H05H1/24

CPC classification number: H05H1/46

Abstract: A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

Abstract translation: 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：US07323401B2

公开(公告)日：2008-01-29

申请号：US11199593

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/22 ,  H01L21/38

CPC classification number: H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

Abstract translation: 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US07303982B2

公开(公告)日：2007-12-04

申请号：US10646467

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: H01L21/42 ,  H01L21/425

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.

Abstract translation: 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域， 以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。 该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

公开(公告)号：US20070032004A1

公开(公告)日：2007-02-08

申请号：US11199570

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/8234

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

Abstract: A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

公开(公告)号：US20060264060A1

公开(公告)日：2006-11-23

申请号：US11131941

申请日：2005-05-17

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/31

CPC classification number: C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  H01L21/268 ,  H01L21/3146

Abstract: A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

Abstract translation: 在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过 将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

公开(公告)号：US20060260545A1

公开(公告)日：2006-11-23

申请号：US11131900

申请日：2005-05-17

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: C23C16/507 ,  C23C16/26 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/3146 ,  H01L21/67115 ,  H01L21/67207

Abstract: An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.

Abstract translation: 一种用于处理半导体晶片的集成系统包括用于沉积吸热层的环形源等离子体反应器，所述反应器包括晶片支架，反应室，与其大致相对的侧面上的所述室耦合的外部折入环形导管，RF源 用于将功率耦合到所述外部折返导管的一部分的电源施加器和包含吸热材料前体气体的处理气体源。 集成系统还包括光学退火室。

公开(公告)号：US20060238953A1

公开(公告)日：2006-10-26

申请号：US11115951

申请日：2005-04-26

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

IPC: H01T23/00

CPC classification number: H01L21/68742 ,  H01L21/6831

Abstract: A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

Abstract translation: 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小力检测器感测由提升销施加的力足够大以指示夹紧晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内 晶圆。