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    Composition for Wet Etching of Silicon Dioxide
    1.
    发明申请
    Composition for Wet Etching of Silicon Dioxide 有权
    二氧化氯湿法蚀刻成分

    公开(公告)号：US20120070998A1

    公开(公告)日：2012-03-22

    申请号：US12887026

    申请日：2010-09-21

    申请人： Jung Hun Lim ,  Dae Hyun Kim ,  Chang Jin Yoo ,  Seong Hwan Park

    发明人： Jung Hun Lim ,  Dae Hyun Kim ,  Chang Jin Yoo ,  Seong Hwan Park

    IPC分类号： H01L21/306 ,  C09K13/00

    CPC分类号： H01L21/31111 ,  C09K13/08

    摘要： Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

    摘要翻译： 本发明提供一种用于以高蚀刻速率电除去二氧化硅的蚀刻组合物，更具体地，涉及含有1〜40重量％氟化氢（HF）的二氧化硅湿蚀刻用组合物。 5〜40重量％的氟化氢铵（NH4HF2）; 和水，并且还包括表面活性剂以提高二氧化硅和氮化硅膜的选择性。 由于用于二氧化硅的湿法蚀刻的组合物具有二氧化硅对氮化硅膜的高蚀刻选择性，因此有选择地除去二氧化硅。

    Photoresist stripper composition for semiconductor manufacturing
    2.
    发明授权
    Photoresist stripper composition for semiconductor manufacturing 有权
    用于半导体制造的光刻胶剥离剂组合物

    公开(公告)号：US07951765B2

    公开(公告)日：2011-05-31

    申请号：US12063745

    申请日：2006-08-05

    申请人： Hyun Tak Kim ,  Seong Hwan Park ,  Jung Hun Lim ,  Sung Bae Kim ,  Chan Jin Jeong ,  Kui Jong Baek

    发明人： Hyun Tak Kim ,  Seong Hwan Park ,  Jung Hun Lim ,  Sung Bae Kim ,  Chan Jin Jeong ,  Kui Jong Baek

    IPC分类号： C11D7/50

    CPC分类号： G03F7/425 ,  G03F7/426

    摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

    摘要翻译： 本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。 更具体地，光致抗蚀剂剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40重量％的极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。 用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性， 在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

    Photoresist Stripper Composition for Semiconductor Manufacturing
    3.
    发明申请
    Photoresist Stripper Composition for Semiconductor Manufacturing 有权
    半导体制造用光阻剥离剂组合物

    公开(公告)号：US20090312216A1

    公开(公告)日：2009-12-17

    申请号：US12063745

    申请日：2006-08-05

    申请人： Hyun Tak Kim ,  Seong Hwan Park ,  Jung Hun Lim ,  Sung Bae Kim ,  Chan Jin Jeong ,  Kui Jong Baek ,  Woong Hahn ,  Sang Won Lee ,  Gun-Woong Lee

    发明人： Hyun Tak Kim ,  Seong Hwan Park ,  Jung Hun Lim ,  Sung Bae Kim ,  Chan Jin Jeong ,  Kui Jong Baek ,  Woong Hahn ,  Sang Won Lee ,  Gun-Woong Lee

    IPC分类号： G03F7/42

    CPC分类号： G03F7/425 ,  G03F7/426

    摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

    摘要翻译： 本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。 更具体地，光刻胶剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40wt％极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。 用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性， 在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

    Composition for wet etching of silicon dioxide
    4.
    发明授权
    Composition for wet etching of silicon dioxide 有权
    用于二氧化硅湿蚀刻的组成

    公开(公告)号：US08465662B2

    公开(公告)日：2013-06-18

    申请号：US12887026

    申请日：2010-09-21

    申请人： Jung Hun Lim ,  Dae Hyun Kim ,  Chang Jin Yoo ,  Seong Hwan Park

    发明人： Jung Hun Lim ,  Dae Hyun Kim ,  Chang Jin Yoo ,  Seong Hwan Park

    IPC分类号： C03C15/00

    CPC分类号： H01L21/31111 ,  C09K13/08

    摘要： Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

    摘要翻译： 本发明提供一种用于以高蚀刻速率电除去二氧化硅的蚀刻组合物，更具体地，涉及含有1〜40重量％氟化氢（HF）的二氧化硅湿蚀刻用组合物。 5〜40重量％的氟化氢铵（NH4HF2）; 和水，并且还包括表面活性剂以提高二氧化硅和氮化硅膜的选择性。 由于用于二氧化硅的湿法蚀刻的组合物具有二氧化硅对氮化硅膜的高蚀刻选择性，因此有选择地除去二氧化硅。