摘要:
A method for detecting electromagnetic property of oriented silicon steel, the method comprises: measuring Euler angles of each of crystal grains in a specimen by use of metallographic etch-pit method; calculating orientation deviation angle θi (degree) of the crystal grain; combining area Si (mm2) of the crystal grain and correction coefficient X of element Si (X=0.1˜10 T/degree); correcting on the basis of the magnetic property B0 (saturation magnetic induction, T) of single-crystal material by using these parameters (θi, Si, X), formula for correcting is B 8 = - 0.015 × X × ∑ n = 1 i S i θ i ∑ n = 1 i S i + ( B 0 - 0.04 ) ( 1 ) obtaining electromagnetic property B8 of the oriented silicon steel by the above calculations. The present invention can implement detection of electromagnetic property of a specimen under the circumstances that there is no magnetizm measuring device or that magnetizm measuring devices cannot be used due to reasons such as weight and size of the specimen being too small or surface quality of the specimen being poor.
摘要:
The present invention refers to a chromium-free insulation coating material for non-oriented silicon steel, comprising, in parts by weight, the following components: metal dihydrogen phosphate salt of 100 parts, epoxy resin of 10˜60 parts, naphthenate drier or isooctanoate metal salt drier of 0.001˜10 parts, organic solvent of 0.001˜100 parts and pure water of 60˜2000 parts. The metal dihydrogen phosphate salt is Al(H2PO4)3, Mg(H2PO4)2, Ca(H2PO4)2 or Zn(H2PO4)2; the epoxy resin is water-soluble epoxy resin or epoxy resin emulsion. Chromium-free insulation coating material of the present invention, after being coated on non-oriented silicon steel, renders highly transparent appearance, and has excellent insulativity, corrosion resistance, adhesiveness, weldability and manufacturability, so as to eliminate defects of the existing chromium-free coating, such as sticky and un-wear-resistant and to meet environment protection requirements.
摘要翻译:本发明涉及一种用于非取向硅钢的无铬绝缘涂层材料,其包含以重量份计的以下成分:100份的金属二氢磷酸盐,10〜60份的环氧树脂,环烷酸酯干燥剂或异辛酸酯 金属盐干燥剂为0.001〜10份,有机溶剂为0.001〜100份,纯水为60〜2000份。 磷酸金属盐为Al(H 2 PO 4)3,Mg(H 2 PO 4)2,Ca(H 2 PO 4)2或Zn(H 2 PO 4)2; 环氧树脂是水溶性环氧树脂或环氧树脂乳液。 本发明的无铬绝缘涂层材料涂覆在非取向硅钢上后,外观高透明,绝缘性,耐腐蚀性,粘合性,焊接性和可制造性优异,从而消除了现有的铬 - 自由涂层,如粘性和不耐磨损,符合环保要求。
摘要:
A metal-oxide-metal capacitor comprises a first electrode, a second electrode, a plurality of first fingers and a plurality of second fingers. Each first finger and its corresponding second finger are in parallel and separated by a low k dielectric material. A via-hole region is employed to enclose the metal-oxide-metal capacitor so as to remove the moisture stored in the low k dielectric material.
摘要:
A method of operation of a navigation system includes: preprocessing an intersection from map data into an edge in query data; generating a route having a turn at the intersection; and sending the route for displaying at a device and for maneuvering the turn at the intersection by querying the query data for the edge of the intersection.
摘要:
There is disclosed a micro-channel heat exchanger, comprising a first header formed with an inlet; a second header spaced apart from the first header, one of the first and second headers being formed with an outlet; flat tubes, two ends of each flat tube being connected with the first and second headers respectively such that a plurality of micro-channels of each flat tube communicate with the first and second headers; fins, each fin being disposed between two adjacent flat tubes; and a return pipe, a first end of which being connected to the outlet formed in one of the first and second headers and a second end thereof being extended towards the other of the first and second headers. The location of the outlet of the micro-channel heat exchanger is easy to change, and the micro-channel heat exchanger is low in cost, compact in structure and easy to install.
摘要:
Provided are thiophene-containing organic photoelectric materials represented by structural formula (1). The materials are thiophene compounds having multiple thiophene rings and cyano groups, useful in solar cell applications. One primary compound, for example, derivative of dicyanoethenyl quinquethiophene is well suited for application as electron donor material. Preparation methods of these thiophene-containing organic photoelectric materials and solar cell devices containing the above thiophene-containing organic photoelectric materials also are provided. Due to the fact that thiophene rings and cyano groups are included, the above thiophene-containing organic photoelectric materials have broader spectra respondence, better thermal stability and environmental stability.
摘要:
An embodiment is a semiconductor structure. The semiconductor structure comprises at least two gate structures on a substrate. The gate structures define a recess between the gate structures, and the recess is defined by a depth in a vertical direction. The depth is from a top surface of at least one of the gate structures to below a top surface of the substrate, and the depth extends in an isolation region in the substrate. The semiconductor structure further comprises a filler material in the recess. The filler material has a first thickness in the vertical direction. The semiconductor structure also comprises an inter-layer dielectric layer in the recess and over the filler material. The inter-layer dielectric layer has a second thickness in the vertical direction below the top surface of the at least one of the gate structures. The first thickness is greater than the second thickness.
摘要:
The present disclosure provides a method of fabricating a semiconductor device that includes forming first and second gate structures over first and second regions of a substrate, respectively, forming spacers on sidewalls of the first and second gate structures, the spacers being formed of a first material, forming a capping layer over the first and second gate structures, the capping layer being formed of a second material different from the first material, forming a protection layer over the second region to protect the second gate structure, removing the capping layer over the first gate structure; removing the protection layer over the second region, epitaxially (epi) growing a semiconductor material on exposed portions of the substrate in the first region, and removing the capping layer over the second gate structure by an etching process that exhibits an etching selectivity of the second material to the first material.
摘要:
Disclosed are organic semiconductor material, preparation methods and uses thereof. The organic semiconductor material is shown as the following formula (P), in which R1, R2, R3, m, n, x and y are defined as the description. The said organic semiconductor material can be used in organic solar cell, organic field effect transistor, organic electroluminescence element, organic optical storage, organic non-linear material or organic laser element.
摘要:
A method of watching television programs, to be implemented using a television device and a remote control device that remotely controls the television device and that has an audio-video output module, includes: configuring first and second television tuners of the television device to receive the television program signals, respectively; and configuring the television device to receive an output television program command from the remote control device, and to select one of the television program signals for output to the remote control device and for subsequent reproduction by the audio-video output module of the remote control device.