公开(公告)号：US08692353B2

公开(公告)日：2014-04-08

申请号：US13224896

申请日：2011-09-02

Applicant: Chun-Hung Ko ,  Jyh-Huei Chen ,  Ming-Jie Huang

Inventor： Chun-Hung Ko ,  Jyh-Huei Chen ,  Ming-Jie Huang

IPC: H01L29/06

CPC classification number: H01L21/76227 ,  H01L21/823437 ,  H01L27/0694 ,  H01L27/11

Abstract: An embodiment is a semiconductor structure. The semiconductor structure comprises at least two gate structures on a substrate. The gate structures define a recess between the gate structures, and the recess is defined by a depth in a vertical direction. The depth is from a top surface of at least one of the gate structures to below a top surface of the substrate, and the depth extends in an isolation region in the substrate. The semiconductor structure further comprises a filler material in the recess. The filler material has a first thickness in the vertical direction. The semiconductor structure also comprises an inter-layer dielectric layer in the recess and over the filler material. The inter-layer dielectric layer has a second thickness in the vertical direction below the top surface of the at least one of the gate structures. The first thickness is greater than the second thickness.

Abstract translation: 一个实施例是半导体结构。 半导体结构在衬底上包括至少两个栅极结构。 栅极结构在栅极结构之间限定凹陷，并且凹部由垂直方向上的深度限定。 深度是从至少一个栅极结构的顶表面到衬底的顶表面之下的深度，并且深度在衬底中的隔离区域中延伸。 半导体结构还包括在凹部中的填充材料。 填充材料在垂直方向上具有第一厚度。 该半导体结构还包括在凹槽中和填充材料之上的层间电介质层。 所述层间电介质层在所述至少一个栅极结构的顶表面的垂直方向上具有第二厚度。 第一厚度大于第二厚度。

公开(公告)号：US07532317B2

公开(公告)日：2009-05-12

申请号：US11319677

申请日：2005-12-28

Applicant: Nigel Smith ,  Yi-sha Ku ,  Shih Chun Wang ,  Chun-hung Ko

Inventor： Nigel Smith ,  Yi-sha Ku ,  Shih Chun Wang ,  Chun-hung Ko

IPC: G01B15/08

CPC classification number: G01N21/4788 ,  G01B11/24 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A system and method for efficiently and accurately determining grating profiles uses characteristic signature matching in a discrepancy enhanced library generation process. Using light scattering theory, a series of scattering signatures vs. scattering angles or wavelengths are generated based on the designed grating parameters, for example. CD, thickness and Line:Space ratio. This method selects characteristic portions of the signatures wherever their discrepancy exceeds the preset criteria and reforms a characteristic signature library for quick and accurate matching. A rigorous coupled wave theory can be used to generate a diffraction library including a plurality of simulated diffraction spectrums based on a predetermined structural parameter of the grating. The characteristic region of the plurality of simulated diffraction spectrums is determined based on if the root mean square error of the plurality of simulated diffraction spectrums is larger than a noise level of a measuring machine. The diffraction intensity of the measured diffraction spectrum is compared with that of the plurality of simulated diffraction spectrums in the characteristic region to select a match spectrum from these simulated diffraction spectrums, and the structural parameter of the grating is decided based on the match spectrum.

Abstract translation: 用于有效和准确地确定光栅轮廓的系统和方法使用差异增强型图书馆生成过程中的特征签名匹配。 使用光散射理论，例如，基于设计的光栅参数产生一系列散射特征与散射角或波长。 CD，厚度和线：空间比。 该方法选择签名的特征部分，无论其差异超过预设标准，并对特征签名库进行改进以进行快速准确的匹配。 可以使用严格的耦合波理论来产生包括基于光栅的预定结构参数的多个模拟衍射光谱的衍射库。 基于多个模拟衍射光谱的均方根误差是否大于测量机的噪声水平来确定多个模拟衍射光谱的特征区域。 将测量的衍射光谱的衍射强度与特征区域中的多个模拟衍射光谱的衍射强度进行比较，从这些模拟衍射光谱中选择匹配光谱，并根据匹配光谱确定光栅的结构参数。

公开(公告)号：US07355713B2

公开(公告)日：2008-04-08

申请号：US11615886

申请日：2006-12-22

Applicant: Deh Ming Shyu ,  Chun Hung Ko ,  Yi Sha Ku ,  Nigel Smith

Inventor： Deh Ming Shyu ,  Chun Hung Ko ,  Yi Sha Ku ,  Nigel Smith

IPC: G01N21/47

CPC classification number: G01N33/54373 ,  G01N21/4788 ,  G01N2021/4714

Abstract: A method for inspecting a grating biochip comprises the steps of irradiating a grating biochip using a light beam, measuring a diffracted light using a photodetector, selecting a plurality of parameters of the grating biochip, and optimizing the parameters to enhance the detection sensitivity, wherein the diffracted light is generated by the light beam passing the grating biochip. The grating biochip comprises a grating structure including a semiconductor substrate, a grating positioned on the semiconductor substrate and a dielectric layer covering the grating and the semiconductor substrate. The sample of the biochip is positioned on the grating structure.

Abstract translation: 用于检查光栅生物芯片的方法包括以下步骤：使用光束照射光栅生物芯片，使用光电检测器测量衍射光，选择光栅生物芯片的多个参数，以及优化参数以增强检测灵敏度，其中 衍射光由通过光栅生物芯片的光束产生。 光栅生物芯片包括光栅结构，其包括半导体衬底，位于半导体衬底上的光栅和覆盖光栅和半导体衬底的电介质层。 生物芯片的样品位于光栅结构上。

公开(公告)号：US06995902B2

公开(公告)日：2006-02-07

申请号：US10692754

申请日：2003-10-27

Applicant: Hau-Wei Wang ,  Spring Ying-Cheun Yeh ,  Chun-Hung Ko

Inventor： Hau-Wei Wang ,  Spring Ying-Cheun Yeh ,  Chun-Hung Ko

IPC: G02B21/06

CPC classification number: G02B5/1866 ,  G02B21/082

Abstract: A microscopic imaging apparatus with flat-top distribution of light is disclosed, which includes an incident light source, a diffractive optical element, a beam-splitter, a tunable filter and an image sensor. The diffractive optical element receives an incident light provided by the incident light source and generates a uniform incident light. The uniform incident light illuminates a sample so that an optical signal is emitted from the sample. The optical signal passes through the beam-splitter and the filter unit to reach the image sensor for obtaining the detected image of the sample.

Abstract translation: 公开了一种具有平顶分布的光的显微成像装置，其包括入射光源，衍射光学元件，分束器，可调谐滤光器和图像传感器。 衍射光学元件接收由入射光源提供的入射光并产生均匀的入射光。 均匀入射光照射样品，从而从样品发射光信号。 光信号通过光束分离器和滤光器单元以到达图像传感器以获得检测到的样本图像。

公开(公告)号：US20050094700A1

公开(公告)日：2005-05-05

申请号：US10975365

申请日：2004-10-29

Applicant: Chun-Hung Ko ,  Hsin-Yueh Sung

Inventor： Chun-Hung Ko ,  Hsin-Yueh Sung

IPC: G02B27/09 ,  G02F2/00 ,  H01S3/08

CPC classification number: G02B19/0009 ,  G02B19/0052 ,  G02B27/0944

Abstract: A apparatus for generating a structured line having a sinusoidal intensity distribution is disclosed. The apparatus comprises a coherent light source and a diffractive optical element. The coherent light source provides an incident light beam to the diffractive optical element, the incident light beam being modulated by means of the diffractive optical element to form a fringe pattern of sinusoidal intensity distribution. The diffractive optical element design is optimized in accordance with the optical field distribution of an incident-light-beam plane and the optical field distribution of an output-light-beam plane.

Abstract translation: 公开了一种用于产生具有正弦强度分布的结构化线的装置。 该装置包括相干光源和衍射光学元件。 相干光源向衍射光学元件提供入射光束，入射光束借助于衍射光学元件进行调制，以形成正弦强度分布的条纹图案。 衍射光学元件设计根据入射光束平面的光场分布和输出光束平面的光场分布进行优化。

公开(公告)号：US08735258B2

公开(公告)日：2014-05-27

申请号：US13343903

申请日：2012-01-05

Applicant: Chun-Hung Ko ,  Jyh-Huei Chen ,  Shyh-Wei Wang

Inventor： Chun-Hung Ko ,  Jyh-Huei Chen ,  Shyh-Wei Wang

IPC: H01L21/02 ,  H01L21/20

CPC classification number: H01L21/02 ,  H01L21/20 ,  H01L27/0629 ,  H01L28/20

Abstract: Methods of fabricating a semiconductor device including a metal gate transistor and a resistor are provided. A method includes providing a substrate including a transistor device region and an isolation region, forming a dummy gate over the transistor device region and a resistor over the isolation region, and implanting the resistor with a dopant. The method further includes wet etching the dummy gate to remove the dummy gate, and then forming a metal gate over the transistor device region to replace the dummy gate.

Abstract translation: 提供了制造包括金属栅极晶体管和电阻器的半导体器件的方法。 一种方法包括提供包括晶体管器件区域和隔离区域的衬底，在晶体管器件区域上形成虚拟栅极，在隔离区域上形成电阻器，以及用掺杂剂注入电阻器。 该方法还包括湿式蚀刻伪栅极以去除虚拟栅极，然后在晶体管器件区域上形成金属栅极以替代伪栅极。

公开(公告)号：US20130178039A1

公开(公告)日：2013-07-11

申请号：US13343903

申请日：2012-01-05

Applicant: Chun-Hung Ko ,  Jyh-Huei Chen ,  Shyh-Wei Wang

Inventor： Chun-Hung Ko ,  Jyh-Huei Chen ,  Shyh-Wei Wang

IPC: H01L21/02

CPC classification number: H01L21/02 ,  H01L21/20 ,  H01L27/0629 ,  H01L28/20

Abstract: Methods of fabricating a semiconductor device including a metal gate transistor and a resistor are provided. A method includes providing a substrate including a transistor device region and an isolation region, forming a dummy gate over the transistor device region and a resistor over the isolation region, and implanting the resistor with a dopant. The method further includes wet etching the dummy gate to remove the dummy gate, and then forming a metal gate over the transistor device region to replace the dummy gate.

Abstract translation: 提供了制造包括金属栅极晶体管和电阻器的半导体器件的方法。 一种方法包括提供包括晶体管器件区域和隔离区域的衬底，在晶体管器件区域上形成虚拟栅极，在隔离区域上形成电阻器，以及用掺杂剂注入电阻器。 该方法还包括湿式蚀刻伪栅极以去除虚拟栅极，然后在晶体管器件区域上形成金属栅极以替代伪栅极。

公开(公告)号：US20130092985A1

公开(公告)日：2013-04-18

申请号：US13272875

申请日：2011-10-13

Applicant: Chun-Hung Ko ,  Jyh-Huei Chen ,  Ming-Jie Huang

Inventor： Chun-Hung Ko ,  Jyh-Huei Chen ,  Ming-Jie Huang

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/20

CPC classification number: H01L21/76834 ,  H01L21/76897 ,  H01L29/66628 ,  H01L29/66636

Abstract: An embodiment is a semiconductor structure. The semiconductor structure comprises an epitaxial region, a gate structure, a contact spacer, and an etch stop layer. The epitaxial region is in a substrate. A top surface of the epitaxial region is elevated from a top surface of the substrate, and the epitaxial region has a facet between the top surface of the substrate and the top surface of the epitaxial region. The gate structure is on the substrate. The contact spacer is laterally between the facet of the epitaxial region and the gate structure. The etch stop layer is over and adjoins each of the contact spacer and the top surface of the epitaxial region. A ratio of an etch selectivity of the contact spacer to an etch selectivity of the etch stop layer is equal to or less than 3:1.

Abstract translation: 一个实施例是半导体结构。 半导体结构包括外延区域，栅极结构，接触间隔物和蚀刻停止层。 外延区域在衬底中。 外延区的顶表面从衬底的顶表面升高，并且外延区具有在衬底的顶表面和外延区的顶表面之间的刻面。 栅极结构在衬底上。 接触间隔物横向在外延区域的小面和栅极结构之间。 蚀刻停止层在每个接触间隔物和外延区域的顶表面之上并相邻。 接触间隔物的蚀刻选择性与蚀刻停止层的蚀刻选择性的比率等于或小于3:1。

公开(公告)号：US07800824B2

公开(公告)日：2010-09-21

申请号：US11774402

申请日：2007-07-06

Applicant: Shih Chun Wang ,  Yi Sha Ku ,  Chun Hung Ko ,  Deh Ming Shyu ,  Nigel Smith

Inventor： Shih Chun Wang ,  Yi Sha Ku ,  Chun Hung Ko ,  Deh Ming Shyu ,  Nigel Smith

IPC: G02B5/18 ,  G02B27/44

CPC classification number: G02B5/18 ,  G02B27/0012 ,  Y10S359/90

Abstract: A method for designing a grating comprises steps of (a1) generating a first diffraction spectrum based on calculation values of a plurality of structural parameters, (a2) calculating a first difference value between the first diffraction spectrum and a first nominal spectrum, (a3) setting a default difference value with the first difference value and default structural parameter values with the structural parameter values, (b1) changing one of the structural parameter values to generate a second diffraction spectrum, (b2) calculating a second difference value between the second diffraction spectrum and a second nominal spectrum, and (c) comparing the default difference value and the second difference value, updating a default difference value with the smaller one, and updating the default structural parameter values with the structural parameter values corresponding to the smaller one.

Abstract translation: 一种光栅设计方法，包括以下步骤：（a1）基于多个结构参数的计算值产生第一衍射光谱，（a2）计算第一衍射光谱和第一标称光谱之间的第一差值，（a3） 设置具有所述结构参数值的所述第一差值和默认结构参数值的默认差值，（b1）改变所述结构参数值之一以产生第二衍射谱，（b2）计算所述第二衍射 频谱和第二标称频谱，以及（c）比较默认差值和第二差值，更新较小值的默认差值，并用对应于较小值的结构参数值更新默认结构参数值。

公开(公告)号：US20090030631A1

公开(公告)日：2009-01-29

申请号：US11858442

申请日：2007-09-20

Applicant: Chun Hung Ko ,  Yi Sha Ku ,  Chung Chu Chang

Inventor： Chun Hung Ko ,  Yi Sha Ku ,  Chung Chu Chang

IPC: G06F19/00

CPC classification number: G01N21/47 ,  G01B21/08 ,  G01B21/20 ,  G01N21/211 ,  G01N2201/1296

Abstract: A method for improving the measurement capability of multi-parameter inspection systems includes performing a measuring procedure to acquire a measured signature of a sample, calculating weighting factors representing a correlation between structural parameters of the sample by using a weighting algorithm, transforming the weighting factors into a sampling function by using a transforming rule, updating the measured signature to form an updated measured signature and generating a plurality of updated nominal signatures according to the sampling function, and comparing the updated measured signature and the updated nominal signatures to determine the structural parameters of the sample.

Abstract translation: 一种用于提高多参数检测系统的测量能力的方法，包括执行测量程序以获取样本的测量签名，通过使用加权算法来计算表示样本的结构参数之间的相关性的加权因子，将加权因子转换成 通过使用变换规则的采样函数，更新测量的签名以形成更新的测量签名并根据采样函数生成多个更新的标称签名，以及比较更新的测量签名和更新的标称签名，以确定 例子。