公开(公告)号：US20050238968A1

公开(公告)日：2005-10-27

申请号：US10511854

申请日：2003-01-21

申请人： Jonathan Caspar ,  Derald Andrews ,  Jeffrey Meth ,  Gregory Weed

发明人： Jonathan Caspar ,  Derald Andrews ,  Jeffrey Meth ,  Gregory Weed

IPC分类号： B41M5/26 ,  B41M5/382 ,  B41M5/395 ,  B41M5/40 ,  B41M5/42 ,  B41M5/44 ,  B41M7/00 ,  G02B5/20 ,  G02F1/1335

CPC分类号： B41M5/42 ,  B41M5/265 ,  B41M5/38207 ,  B41M5/38257 ,  B41M5/395 ,  B41M5/44 ,  B41M7/0027 ,  G02B5/201 ,  G02F1/133516 ,  G02F2001/133519

摘要： A planarizing element is described for use in a thermal imaging process. The planarizing element includes a support; a planarizing layer comprising a crosslinkable binder having a weight average molecular weight of about 20,000 to about 110,000.

摘要翻译： 描述了用于热成像过程中的平坦化元件。 平坦化元件包括支撑件; 平坦化层包含重均分子量为约20,000至约110,000的可交联粘合剂。

公开(公告)号：US20050142813A1

公开(公告)日：2005-06-30

申请号：US10949791

申请日：2004-09-24

申请人： Jeffrey Meth ,  Irina Malajovich

发明人： Jeffrey Meth ,  Irina Malajovich

IPC分类号： B41M1/12 ,  B41M3/12 ,  B41M5/03 ,  B41M5/382 ,  H01L51/40 ,  H05K3/04 ,  H05K3/28 ,  H01L21/331 ,  H01L21/30 ,  H01L21/46

CPC分类号： H05K3/046 ,  B41M1/12 ,  B41M3/12 ,  B41M5/03 ,  B41M5/382 ,  B41M5/38207 ,  B41M5/38221 ,  H01L51/0004 ,  H01L51/0013 ,  H05K3/28 ,  H05K2203/0528 ,  H05K2203/0537 ,  H05K2203/0557 ,  Y10S438/942 ,  Y10S438/975

摘要： The present invention is a process for transfer of a pattern of material from a donor substrate to a receiver substrate by lamination. The pattern of the transferred material is defined by an aperture in a mask interposed between the donor and receiver during lamination. The technique is compatible with flexible polymer receiver substrates and is useful in fabricating thin film transistors for flexible displays.

摘要翻译： 本发明是通过层压将材料图案从供体基板转移到接收器基板的方法。 转移材料的图案由叠层期间介于供体和接受体之间的掩模中的孔限定。 该技术与柔性聚合物接收器基板兼容，并且可用于制造用于柔性显示器的薄膜晶体管。

公开(公告)号：US20050130443A1

公开(公告)日：2005-06-16

申请号：US10949632

申请日：2004-09-24

申请人： Jeffrey Meth ,  Kenneth Sharp ,  Robert Wheland ,  Geoffrey Nunes

发明人： Jeffrey Meth ,  Kenneth Sharp ,  Robert Wheland ,  Geoffrey Nunes

IPC分类号： H01L21/336 ,  H01L21/34 ,  H01L21/441 ,  H01L21/47 ,  H01L21/768 ,  H01L29/49 ,  H01L29/786 ,  H01L51/05 ,  H01L21/30 ,  H01L21/31 ,  H01L21/46 ,  H01L21/469

CPC分类号： H01L21/441 ,  H01L21/47 ,  H01L21/76801 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78681 ,  H01L51/0516

摘要： This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

摘要翻译： 本发明涉及用于制造电子器件的方法，更具体地说，涉及将电介质材料层层压到半导体上的方法。

公开(公告)号：US20070006758A1

公开(公告)日：2007-01-11

申请号：US11521051

申请日：2006-09-14

申请人： Jonathan Caspar ,  Gerald Andrews ,  Jeffrey Meth ,  Gregory Weed

发明人： Jonathan Caspar ,  Gerald Andrews ,  Jeffrey Meth ,  Gregory Weed

IPC分类号： B41C3/08

CPC分类号： B41M5/42 ,  B41M5/265 ,  B41M5/38207 ,  B41M5/38257 ,  B41M5/395 ,  B41M5/44 ,  B41M7/0027 ,  G02B5/201 ,  G02F1/133516 ,  G02F2001/133519

摘要： A planarizing element is described for use in a thermal imaging process. The planarizing element includes a support; a planarizing layer comprising a crosslinkable binder having a weight average molecular weight of about 20,000 to about 110,000.

摘要翻译： 描述了用于热成像过程中的平坦化元件。 平坦化元件包括支撑件; 平坦化层包含重均分子量为约20,000至约110,000的可交联粘合剂。

公开(公告)号：US20050100668A1

公开(公告)日：2005-05-12

申请号：US10949867

申请日：2004-09-24

申请人： Jeffrey Meth

发明人： Jeffrey Meth

IPC分类号： C23C16/00 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/52

CPC分类号： H01L51/001 ,  H01L51/0055 ,  H01L51/5237

摘要： This invention provides a method for increasing the charge-carrier mobility in vapor-deposited pentacene, resulting in improved semiconductor properties.

摘要翻译： 本发明提供了一种提高蒸镀并五苯中电荷 - 载流子迁移率的方法，从而提高半导体性能。

公开(公告)号：US20060249301A1

公开(公告)日：2006-11-09

申请号：US11417860

申请日：2006-05-03

申请人： Jeffrey Meth

发明人： Jeffrey Meth

IPC分类号： H05K1/11 ,  H01L23/52

CPC分类号： H01R4/04 ,  H05K3/323 ,  H05K3/361 ,  H05K2201/09945 ,  Y10T29/49126

摘要： Anisotropic conductive coatings and electronic devices made using the coatings are provided. The anisotropic conductive coatings are particularly useful in electronic devices that contain flexible substrates.

摘要翻译： 提供各向异性导电涂层和使用涂层制成的电子器件。 各向异性导电涂层在包含柔性基底的电子器件中特别有用。

公开(公告)号：US20060141664A1

公开(公告)日：2006-06-29

申请号：US11354365

申请日：2006-02-15

申请人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

发明人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

公开(公告)号：US20060024960A1

公开(公告)日：2006-02-02

申请号：US10949604

申请日：2004-09-24

申请人： Jeffrey Meth

发明人： Jeffrey Meth

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L31/1836 ,  C23C18/04 ,  C23C18/1204 ,  C23C18/1233 ,  C23C18/1241 ,  C23C18/125 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/02581 ,  H01L21/02628 ,  Y02E10/50

摘要： A method is described for producing thin semiconductor films on a substrate by contacting a substrate with a solution containing a metal salt, a source of a Group VIa element, and chelating agent, and a noble metal in its elemental form. The resulting semiconductor films are useful for electronic and photovoltaic applications.

摘要翻译： 描述了通过使基底与含有金属盐，VIa族元素的源和螯合剂的溶液以及元素形式的贵金属接触而在基底上制造薄半导体膜的方法。 所得半导体膜可用于电子和光电应用。

公开(公告)号：US20050062066A1

公开(公告)日：2005-03-24

申请号：US10671303

申请日：2003-09-24

申请人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

发明人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

IPC分类号： H01L27/28 ,  H01L29/739 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。