Lamination of organic semiconductor
    9.
    发明授权
    Lamination of organic semiconductor 有权
    有机半导体的层压

    公开(公告)号:US07105462B2

    公开(公告)日:2006-09-12

    申请号:US10895599

    申请日:2004-07-21

    申请人: Irina Malajovich

    发明人: Irina Malajovich

    IPC分类号: H01L21/31 B41M3/12 H01L23/58

    摘要: Low temperature, ambient pressure processes are desired for fabrication of transistors on flexible polymer substrates. Lamination of semiconductors is such a process. The semiconductor is deposited on a donor substrate. The donor is positioned over a receiver substrate, which may be patterned with additional transistor elements. The semiconductor is transferred from the donor to the receiver by lamination.

    摘要翻译: 需要低温环境压力工艺来在柔性聚合物基底上制造晶体管。 半导体层叠是这样一个过程。 半导体沉积在供体衬底上。 供体位于接收器衬底上,接收器衬底可以被附加晶体管元件图案化。 通过层压将半导体从供体转移到接收器。