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    Photoresists comprising novolak resin blends
    2.
    发明申请
    Photoresists comprising novolak resin blends 审中-公开
    含有酚醛清漆树脂混合物的光刻胶

    公开(公告)号：US20080182204A1

    公开(公告)日：2008-07-31

    申请号：US12011534

    申请日：2008-01-28

    Applicant: Jeffrey M. Calvert ,  Joseph F. Lachowski

    Inventor： Jeffrey M. Calvert ,  Joseph F. Lachowski

    IPC: G03F7/30 ,  G03F7/004

    CPC classification number: G03F7/0236

    Abstract: Photoresist compositions are provided comprising a radiation sensitive component and at least two distinct novolak resins. In one aspect, photoresists of the invention exhibit notably high dissolution rates, such as in excess of 800 angstroms per second in aqueous developer solution. In another aspect, photoresists of the invention can exhibit good photospeeds, such as 100 mJ/cm2 or less.

    Abstract translation: 提供的光致抗蚀剂组合物包含辐射敏感组分和至少两种不同的酚醛清漆树脂。 在一个方面，本发明的光刻胶显示出非常高的溶解速率，例如在显影剂水溶液中超过每秒800埃。 在另一方面，本发明的光致抗蚀剂可以显示出良好的感光速度，例如100mJ / cm 2以下。

    Patterned conducting polymer surfaces and process for preparing the same and devices containing the same
    4.
    发明授权
    Patterned conducting polymer surfaces and process for preparing the same and devices containing the same 失效
    图案化导电聚合物表面及其制备方法和含有其的装置

    公开(公告)号：US5976284A

    公开(公告)日：1999-11-02

    申请号：US855018

    申请日：1997-05-12

    Applicant: Jeffrey M. Calvert ,  Terrence G. Vargo ,  Ranganathan Shashidhar ,  Mu-San Chen

    Inventor： Jeffrey M. Calvert ,  Terrence G. Vargo ,  Ranganathan Shashidhar ,  Mu-San Chen

    IPC: G02F1/1333 ,  G02F1/1343 ,  G03F7/00 ,  H01B1/12 ,  H05K3/02 ,  H01B7/02

    CPC classification number: H05K3/02 ,  G02F1/13439 ,  G03F7/00 ,  G03F7/0007 ,  H01B1/125 ,  H01B1/127 ,  H01B1/128 ,  H01G11/48 ,  H01G11/56 ,  G02F1/133305 ,  Y02E60/13

    Abstract: Patterned conducting polymer surfaces exhibiting excellent properties may be prepared by:(a) forming a surface of a conducting polymer on a surface of a substrate;(b) forming a surface of a blocking material on said surface of said conducting polymer in a pattern-wise fashion, to obtain a first patterned surface containing regions of exposed conducting polymer and regions of blocking material;(c) treating said first patterned surface with an agent which: (i) removes said conducting polymer from said regions of exposed conducting polymer; (ii) decreases the conductivity of said conducting polymer in said regions of exposed conducting polymer; or (iii) increases the conductivity of said conducting polymer in said regions of exposed conducting polymer; and(d) removing said blocking material to obtain a second patterned surface containing an exposed pattern of conducting polymer.

    Abstract translation: 表现出优异性能的图案化的导电聚合物表面可以通过以下步骤制备：（a）在基材的表面上形成导电聚合物的表面; （b）以图案方式在所述导电聚合物的所述表面上形成阻挡材料的表面，以获得含有暴露的导电聚合物区域和阻挡材料区域的第一图案化表面; （c）用试剂处理所述第一图案化表面，所述试剂：（i）从暴露的导电聚合物的所述区域除去所述导电聚合物; （ii）降低所述导电聚合物在所述暴露的导电聚合物区域中的导电性; 或（iii）增加所述导电聚合物在暴露的导电聚合物的所述区域中的导电性; 和（d）去除所述阻挡材料以获得包含暴露的导电聚合物图案的第二图案化表面。

    High aspect ratio metal microstructures and method for preparing the same
    7.
    发明授权
    High aspect ratio metal microstructures and method for preparing the same 失效
    高纵横比金属微结构及其制备方法

    公开(公告)号：US5342737A

    公开(公告)日：1994-08-30

    申请号：US874403

    申请日：1992-04-27

    Applicant: Jacque H. Georger, Jr. ,  Martin C. Peckerar ,  Milton L. Rebbert ,  Jeffrey M. Calvert ,  James J. Hickman

    Inventor： Jacque H. Georger, Jr. ,  Martin C. Peckerar ,  Milton L. Rebbert ,  Jeffrey M. Calvert ,  James J. Hickman

    IPC: G03F1/00 ,  G03F7/00 ,  G03F7/40 ,  G03C5/00

    CPC classification number: G03F7/00 ,  G03F1/22 ,  G03F7/40 ,  Y10S414/123 ,  Y10S428/923 ,  Y10T428/12292

    Abstract: High aspect ratio metal microstructures may be prepared by a method involving(i) forming a layer of a photoresist on a substrate;(ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist;(iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and(iv) optionally, stripping the photoresist remaining on the surface.Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

    Abstract translation: 高纵横比金属微结构可以通过以下方法制备：（i）在基底上形成光致抗蚀剂层; （ii）以成像方式将层暴露于光化辐射并显影曝光层以获得包含没有剩余光致抗蚀剂区域和用光刻胶覆盖的区域的表面; （iii）使表面金属化以在表面区域上形成金属层，该区域上没有剩余的光致抗蚀剂，并且在保留在表面上的光致抗蚀剂区域的侧面上; 和（iv）任选地，剥离残留在表面上的光致抗蚀剂。 这种微结构可用作电子发射体，各向异性高介电互连，用于X射线光刻的掩模，用于控制释放活性剂的载体和超微电极阵列。

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