公开(公告)号：US08222740B2

公开(公告)日：2012-07-17

申请号：US12605013

申请日：2009-10-23

申请人： Jagdish Narayan

发明人： Jagdish Narayan

IPC分类号： H01L23/48 ,  H01L29/40 ,  H01L23/52

CPC分类号： C23C14/28 ,  C03C17/3417 ,  C03C2217/944 ,  C23C14/0021 ,  C23C14/083 ,  C23C14/086 ,  C23C14/542 ,  H01L31/022466 ,  H01L51/442 ,  H01L2924/0002 ,  Y02E10/549 ,  Y10T428/265 ,  H01L2924/00

摘要： A transparent, electrically conductive composite includes a layer of molybdenum oxide or nickel oxide deposited on a layer of zinc oxide layer. The molybdenum component exists in a mixed valence state in the molybdenum oxide. The nickel component exists in a mixed valence state in the nickel oxide. The composite may be utilized in various electronic devices, including optoelectronic devices. In particular, the composite may be utilized as a transparent conductive electrode. As compared to conventional transparent conduct oxides such as indium tin oxide, the composite exhibits superior properties, including a higher work function.

摘要翻译： 透明的导电复合材料包括沉积在氧化锌层上的氧化钼层或氧化镍层。 钼组分以氧化钼中的混合价态存在。 镍组分以氧化镍中的混合价态存在。 该复合材料可用于各种电子器件，包括光电器件。 特别地，复合材料可以用作透明导电电极。 与常规的透明导电氧化物如氧化铟锡相比，复合材料具有优异的性能，包括较高的功函数。

公开(公告)号：US20100102450A1

公开(公告)日：2010-04-29

申请号：US12605013

申请日：2009-10-23

申请人： Jagdish Narayan

发明人： Jagdish Narayan

IPC分类号： H01L23/48 ,  B32B9/00 ,  B32B5/00 ,  B05D5/12 ,  C23C16/513 ,  B05D3/06

CPC分类号： C23C14/28 ,  C03C17/3417 ,  C03C2217/944 ,  C23C14/0021 ,  C23C14/083 ,  C23C14/086 ,  C23C14/542 ,  H01L31/022466 ,  H01L51/442 ,  H01L2924/0002 ,  Y02E10/549 ,  Y10T428/265 ,  H01L2924/00

摘要： A transparent, electrically conductive composite includes a layer of molybdenum oxide or nickel oxide deposited on a layer of zinc oxide layer. The molybdenum component exists in a mixed valence state in the molybdenum oxide. The nickel component exists in a mixed valence state in the nickel oxide. The composite may be utilized in various electronic devices, including optoelectronic devices. In particular, the composite may be utilized as a transparent conductive electrode. As compared to conventional transparent conduct oxides such as indium tin oxide, the composite exhibits superior properties, including a higher work function.

摘要翻译： 透明的导电复合材料包括沉积在氧化锌层上的氧化钼层或氧化镍层。 钼组分以氧化钼中的混合价态存在。 镍组分以氧化镍中的混合价态存在。 该复合材料可用于各种电子器件，包括光电器件。 特别地，复合材料可以用作透明导电电极。 与常规的透明导电氧化物如氧化铟锡相比，复合材料具有优异的性能，包括较高的功函数。

公开(公告)号：US07129068B2

公开(公告)日：2006-10-31

申请号：US10613532

申请日：2003-07-03

申请人： Manobjyoti Bordoloi ,  Bornali Borah ,  Purbali S. Thakur ,  Jagdish Narayan Nigam

发明人： Manobjyoti Bordoloi ,  Bornali Borah ,  Purbali S. Thakur ,  Jagdish Narayan Nigam

IPC分类号： C12P7/62 ,  C12P7/42 ,  C08G63/82 ,  C08G63/87 ,  C08G63/78

CPC分类号： C08G63/89 ,  C08G63/06 ,  C12P7/62

摘要： The present invention describes a process for the isolation of polyhydroxybutyrate of the formula 1 by growing a culture of Bacillus mycoides RLJ B-017 in a growth medium and a carbon source selected from sucrose, molasses and pineapple waste.

公开(公告)号：US20060130745A1

公开(公告)日：2006-06-22

申请号：US11352003

申请日：2006-02-10

申请人： Jagdish Narayan

发明人： Jagdish Narayan

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617

摘要： A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

公开(公告)号：US20060016388A1

公开(公告)日：2006-01-26

申请号：US11038008

申请日：2005-01-18

申请人： Jagdish Narayan

发明人： Jagdish Narayan

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617

摘要： A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

摘要翻译： 在衬底上形成外延膜的方法包括在温度T生长时在衬底上生长膜的初始层，所述初始层具有厚度h，并将膜的初始层退火 温度T退火，从而松弛初始层，其中膜的初始层的厚度h大于临界厚度h C c。 该方法还包括在退火之后在初始层上生长外延膜的附加层。 在一些实施例中，该方法还包括生长包括至少一个非晶岛的膜层。

公开(公告)号：US06955985B2

公开(公告)日：2005-10-18

申请号：US10608780

申请日：2003-06-27

申请人： Jagdish Narayan

发明人： Jagdish Narayan

IPC分类号： C30B25/18 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/22 ,  H01L21/36 ,  H01L21/38 ,  H01L21/44

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617

摘要： A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

摘要翻译： 在衬底上形成外延膜的方法包括在温度T生长时在衬底上生长膜的初始层，所述初始层具有厚度h，并将膜的初始层退火 温度T退火，从而松弛初始层，其中膜的初始层的厚度h大于临界厚度h C c。 该方法还包括在退火之后在初始层上生长外延膜的附加层。 在一些实施例中，该方法还包括生长包括至少一个非晶岛的膜层。

公开(公告)号：US06881983B2

公开(公告)日：2005-04-19

申请号：US10207649

申请日：2002-07-26

申请人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

发明人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

公开(公告)号：US5221411A

公开(公告)日：1993-06-22

申请号：US682586

申请日：1991-04-08

申请人： Jagdish Narayan

发明人： Jagdish Narayan

IPC分类号： C30B13/00

CPC分类号： C30B13/00

摘要： Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The implanted region of the substrate is then annealed to produce a diamond thin film on the non-diamond substrate. Also disclosed are the diamond thin films on non-diamond lattice-plane matched substrates produced by this method. Preferred substrates are lattice and plane matched to diamond such as copper, a preferred implanting method is ion implantation, and a preferred annealing method is pulsed laser annealing.

摘要翻译： 公开了一种在非金刚石基底上开发金刚石薄膜的方法。 该方法包括将碳离子注入到晶格平面匹配或晶格匹配的衬底中。 然后将衬底的注入区域退火以在非金刚石衬底上产生金刚石薄膜。 还公开了通过该方法制造的非金刚石晶格平面匹配衬底上的金刚石薄膜。 优选的衬底是与金刚石（例如铜）晶格和平面匹配的，优选的注入方法是离子注入，优选的退火方法是脉冲激光退火。

公开(公告)号：US20130058384A1

公开(公告)日：2013-03-07

申请号：US13636056

申请日：2011-03-23

申请人： Brian Patrick Otis ,  Jagdish Narayan Pandey

发明人： Brian Patrick Otis ,  Jagdish Narayan Pandey

IPC分类号： H04B1/38 ,  H04L27/22 ,  H04L27/06

CPC分类号： H04B1/16 ,  G06F7/68 ,  H03C3/00 ,  H03D3/00 ,  H03K3/0315 ,  H03K5/00006 ,  H04B1/38

摘要： Described herein is a wireless transceiver and related method that enables ultra low power transmission and reception of wireless communications. In an example embodiment of the wireless transceiver, the wireless transceiver receives a first-reference signal having a first-reference frequency. The wireless transceiver then uses the first-reference signal to injection lock a local oscillator, which provides a set of oscillation signals each having an oscillation frequency that is equal to the first-reference frequency, and each having equally spaced phases. Then the wireless transceiver combines the set of oscillation signals into an output signal having an output frequency that is one of (i) a multiple of the first-reference frequency (in accordance with a transmitter implementation) or (ii) a difference of (a) a second-reference frequency of a second-reference signal and (b) a multiple of the first- reference frequency (in accordance with a receiver implementation).

摘要翻译： 这里描述了能够实现无线通信的超低功率发送和接收的无线收发器和相关方法。 在无线收发器的示例实施例中，无线收发器接收具有第一参考频率的第一参考信号。 然后，无线收发器使用第一参考信号来注入锁定本地振荡器，该本地振荡器提供一组振荡信号，每个振荡信号具有等于第一参考频率的振荡频率，并且每个具有相等间隔的相位。 然后无线收发器将该组振荡信号组合成具有输出频率的输出信号，输出频率是（i）第一参考频率的倍数（根据发射机实现）之一或（ii）差异（a ）第二参考信号的第二参考频率和（b）第一参考频率的倍数（根据接收机实现）。

公开(公告)号：US20070280848A1

公开(公告)日：2007-12-06

申请号：US10593809

申请日：2005-03-24

申请人： Jagdish Narayan ,  Prabhat Kumar ,  Richard Wu

发明人： Jagdish Narayan ,  Prabhat Kumar ,  Richard Wu

IPC分类号： B05D5/12 ,  C22C27/02

CPC分类号： C23C16/06 ,  C23C14/16 ,  C23C14/548

摘要： Thin tantalum films having novel microstructures are provided. The films have microstructures such as nanocrystalline, single crystal and amorphous. These films provide excellent diffusion barrier properties and are useful in microelectronic devices. Methods of forming the films using pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) deposition methods are also provided, as are microelectronic devices incorporating these films.

摘要翻译： 提供具有新颖微结构的薄钽薄膜。 该膜具有微结构，如纳米晶体，单晶和无定形。 这些膜提供优异的扩散阻挡性能并且在微电子器件中是有用的。 还提供了使用脉冲激光沉积（PLD）和分子束外延（MBE）沉积方法形成膜的方法，以及包含这些膜的微电子器件也是如此。