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    Laser system for providing target specific energy deposition and damage
    4.
    发明授权
    Laser system for providing target specific energy deposition and damage 失效
    激光系统提供目标比能量沉积和损伤

    公开(公告)号：US4733660A

    公开(公告)日：1988-03-29

    申请号：US940195

    申请日：1986-12-10

    申请人： Irving Itzkan

    发明人： Irving Itzkan

    IPC分类号： B23K26/10 ,  A61B20060101 ,  A61B17/00 ,  A61B18/00 ,  A61B18/20 ,  A61B18/22 ,  A61N5/06 ,  A61B17/36

    CPC分类号： A61B18/203 ,  A61B18/22 ,  A61B2017/00756 ,  A61B2018/00029 ,  A61B2018/00452 ,  A61B2018/2085

    摘要： A hand piece for use with a laser includes a scanning mechanism which controls dosimetry of radiation applied to a target area which is adjustable to limit thermal diffusion from the light absorbing portion of the irradiated target site for selective target specific energy deposition. When used for dermatologic purposes, the adjustable scanning mechanism permits radiation to impinge on tissue for a predetermined period of time for the selective necrosis of highly-filled blood vessels, while leaving adjacent tissue and empty blood vessels undamaged. The dwell time of the laser beam is designed to match the diffusion time for thermal destruction of the wall of the abnormal vessel, with the dwell time adjusted by the scanning rate.

    摘要翻译： 与激光一起使用的手持件包括扫描机构，其控制施加到目标区域的辐射的剂量测定，该目标区域是可调节的，以限制从被照射的靶位点的光吸收部分的热扩散用于选择性目标比能量沉积。 当用于皮肤病学目的时，可调节的扫描机制允许辐射在组织上冲击预定的时间段，用于选择性高度填充的血管的坏死，同时使相邻的组织和空的血管没有损伤。 激光束的停留时间被设计成匹配异常容器的壁的热破坏的扩散时间，停留时间由扫描速率调整。

    Method for laser melting of silicon
    5.
    发明授权
    Method for laser melting of silicon 失效
    激光熔化硅的方法

    公开(公告)号：US4468279A

    公开(公告)日：1984-08-28

    申请号：US408393

    申请日：1982-08-16

    申请人： Irving Itzkan

    发明人： Irving Itzkan

    IPC分类号： C30B15/02 ,  C30B15/16

    CPC分类号： C30B15/16 ,  C30B15/02 ,  Y10S117/904

    摘要： A method for laser melting of silicon for the production of boules pulled from a pool of liquid ultraclean or ultrapure silicon wherein the boules are used for producing silicon wafers suitable for use in the electronics field. A laser beam, preferably P polarized, is directed at an angle of about 88 degrees to the normal to the surface of silicon disposed in conventional melting apparatus. A suitable mirror is preferably provided to capture and reflect that portion of the laser beam reflected from the surface of the pool. Use of the present invention permits continuous operation by adding solid silicon and melting it at the point of impingement of the laser beam with up to about 96% absorption of laser energy at this point, thereby permitting the provision of heat in a very controlled manner in a continuous ultraclean silicon crystal growth process.

    摘要翻译： 一种用于激光熔化硅的方法，用于生产从液体超纯或超纯硅液池中抽出的毛坯，其中所述毛坯用于生产适用于电子领域的硅片。 优选P极化的激光束以与常规熔化装置中设置的硅表面法线约88度的角度相对。 优选地提供合适的反射镜以捕获并反射从池的表面反射的那部分激光束。 本发明的使用允许通过添加固体硅并在激光束的冲击点使其熔化，从而在该点处高达约96％的激光能量吸收，从而允许以非常受控的方式提供热量 连续超纯硅晶体生长工艺。