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5 条记录 (耗时 0.013 秒)

    Robotic lawn mower
    1.
    发明授权
    Robotic lawn mower 失效
    机器人割草机

    公开(公告)号：US4694639A

    公开(公告)日：1987-09-22

    申请号：US814480

    申请日：1985-12-30

    申请人： Sheng K. Chen ,  Shi Y. Horng ,  I-Ting Chen

    发明人： Sheng K. Chen ,  Shi Y. Horng ,  I-Ting Chen

    IPC分类号： A01D34/00 ,  G05D1/02 ,  A01D35/00 ,  A01D53/08 ,  G05B1/00

    CPC分类号： A01D34/008 ,  G05D1/0272 ,  A01D2101/00 ,  G05D2201/0208 ,  Y10S56/15

    摘要： A lawn mower, having an engine for driving the mower itself, is provided with a memory unit of a paper-tape type for storing a route of travel for the mower and an optical reading unit for reading the stored route of travel. The paper tape is operable with a lead wheel which guides the movement of the mower, so that the paper tape is advanced when the lead wheel rotates and the route of travel of the mower is recorded on the paper tape with a writing member when the mower moves. The optical reading unit is installed in place of the writing member for operating the mower automatically. The optical reading unit reads the recorded route of travel and delivers a signal to control the direction of the lead wheel.

    摘要翻译： 具有用于驱动割草机本身的发动机的割草机设置有用于存储割草机行进路线的纸带类型的存储单元和用于读取所存储的行进路线的光学读取单元。 纸带可以与导向割草机的移动的引导轮一起操作，从而当引线轮旋转时纸带前进，割草机的行进路线在割草机上用书写部件记录在纸带上 移动。 安装光学读取单元代替自动操作割草机的书写构件。 光学读取单元读取记录的行进路线并传送信号以控制引导轮的方向。

    Flux residue cleaning system and method
    2.
    发明授权
    Flux residue cleaning system and method 有权
    助焊剂残渣清洗系统及方法

    公开(公告)号：US09406500B2

    公开(公告)日：2016-08-02

    申请号：US13369138

    申请日：2012-02-08

    申请人： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

    发明人： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

    IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/48 ,  H01L23/00

    CPC分类号： H01L21/02041 ,  H01L21/4864 ,  H01L21/67028 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2224/0401

    摘要： A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

    摘要翻译： 助焊剂残渣清洁系统包括第一和第二浸没室，第一和第二喷雾室以及干燥室。 当晶片浸入第一化学品中时，第一浸入室软化在介于晶片和管芯之间的微胶片周围形成的焊剂残余物的外部区域。 当晶片通过第一化学喷雾撞击以暴露焊剂残留物的内部区域时，第一喷雾室除去焊剂残余物的外部区域。 当晶片浸入第二种化学品中时，第二浸入室软化助焊剂残余物的内部区域。 当晶片被第二化学喷雾冲击时，第二喷雾室去除焊剂残余物的内部区域，以便将晶​​片清洁至预定的标准。 干燥室干燥晶片。

    Flux Residue Cleaning System and Method
    4.
    发明申请
    Flux Residue Cleaning System and Method 有权
    助焊剂残渣清洗系统及方法

    公开(公告)号：US20130199577A1

    公开(公告)日：2013-08-08

    申请号：US13369138

    申请日：2012-02-08

    申请人： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

    发明人： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

    IPC分类号： B08B7/04 ,  B08B5/00 ,  B08B3/08 ,  B08B3/02 ,  B08B3/12

    CPC分类号： H01L21/02041 ,  H01L21/4864 ,  H01L21/67028 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2224/0401

    摘要： A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

    摘要翻译： 助焊剂残渣清洁系统包括第一和第二浸没室，第一和第二喷雾室以及干燥室。 当晶片浸入第一化学品中时，第一浸入室软化在介于晶片和管芯之间的微胶片周围形成的焊剂残余物的外部区域。 当晶片通过第一化学喷雾冲击以便暴露焊剂残余物的内部区域时，第一喷雾室除去焊剂残余物的外部区域。 当晶片浸入第二种化学品中时，第二浸入室软化助焊剂残余物的内部区域。 当晶片被第二化学喷雾冲击时，第二喷雾室去除焊剂残余物的内部区域，以便将晶​​片清洁至预定的标准。 干燥室干燥晶片。