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    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition
    3.
    发明授权
    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
    鎓盐化合物，包含盐化合物的高分子化合物，包含高分子化合物的化学增幅抗蚀剂组合物，以及使用该组合物进行图案化的方法

    公开(公告)号：US08158327B2

    公开(公告)日：2012-04-17

    申请号：US12321111

    申请日：2009-01-15

    Applicant: Hyun-Sang Joo ,  Joo-Hyeon Park ,  Jung-Hoon Oh ,  Dae-Hyeon Shin

    Inventor： Hyun-Sang Joo ,  Joo-Hyeon Park ,  Jung-Hoon Oh ,  Dae-Hyeon Shin

    IPC: G03F7/004 ,  G03F7/30 ,  C08F228/02

    CPC classification number: C07C381/12 ,  C07C309/12 ,  C08F20/38 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

    Abstract translation: 提供由下式（1）表示的化合物：其中R1表示氢原子，三氟甲基，烷基或烷氧基; A表示由下式（2）或式（3）表示的基团：其中R 2，R 3，R 4，R 5和R 6各自独立地表示取代或未取代的烷基，取代或未取代的烯丙基，取代或未取代的 取代或未取代的苄基或取代或未取代的芳基; R2，R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。 包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

    ELECTRONIC DEVICE AND METHOD FOR PROVIDING USER INTERFACE THEREOF
    4.
    发明申请
    ELECTRONIC DEVICE AND METHOD FOR PROVIDING USER INTERFACE THEREOF 审中-公开
    用于提供用户界面的电子设备和方法

    公开(公告)号：US20110231802A1

    公开(公告)日：2011-09-22

    申请号：US13021068

    申请日：2011-02-04

    Applicant: Jae Hak LEE ,  Yong Bum CHO ,  Uni Young KIM ,  Sung Soo KIM ,  Young Sun JOO ,  Sang Hyeon SHIN

    Inventor： Jae Hak LEE ,  Yong Bum CHO ,  Uni Young KIM ,  Sung Soo KIM ,  Young Sun JOO ,  Sang Hyeon SHIN

    IPC: G06F3/048

    CPC classification number: G06F8/38

    Abstract: An electronic device and a method for providing an User Interface (UI) are disclosed. The method for providing a User Interface (UI) in an electronic device according to the present invention, the method may includes receiving a request for provision of the UI, collecting information for configuring the requested UI, classifying the collected information according to a first criterion so as to generate a plurality of pages, hierarchizing the generated pages and arranging the layers according to a second criterion so as to form a multilayer UI and providing the formed multilayer UI as the requested UI.

    Abstract translation: 公开了一种用于提供用户界面（UI）的电子设备和方法。 根据本发明的在电子设备中提供用户界面（UI）的方法，所述方法可以包括：接收提供UI的请求，收集用于配置所请求的UI的信息，根据第一准则对收集的信息进行分类 以便生成多个页面，对生成的页面进行分级化并根据第二准则布置层，以便形成多层UI并提供形成的多层UI作为所请求的UI。

    PROCESS MONITORING APPARATUS AND METHOD
    5.
    发明申请
    PROCESS MONITORING APPARATUS AND METHOD 审中-公开
    过程监控装置和方法

    公开(公告)号：US20100282711A1

    公开(公告)日：2010-11-11

    申请号：US12744723

    申请日：2008-12-12

    Applicant: Chin-Wook Chung ,  Minhyong Lee ,  Sung-Ho Jang ,  Ik-Jin Choi ,  Jung-Hyung Kim ,  Yong-Hyeon Shin

    Inventor： Chin-Wook Chung ,  Minhyong Lee ,  Sung-Ho Jang ,  Ik-Jin Choi ,  Jung-Hyung Kim ,  Yong-Hyeon Shin

    IPC: C23F1/08 ,  C23C16/52 ,  C23F1/00

    CPC classification number: H01J37/32935

    Abstract: Provided are a process monitoring apparatus and method. The process monitoring apparatus includes a process chamber in which a process is performed, a probe assembly disposed on the process chamber, and comprising a probe electrode, a plasma generator generating plasma around the probe assembly, and a drive processor applying an alternating current (AC) voltage having at least 2 fundamental frequencies to the probe assembly, and extracting process monitoring parameters.

    Abstract translation: 提供了一种过程监控装置和方法。 过程监控装置包括处理室，其中进行处理，设置在处理室上的探针组件，并且包括探针电极，在探针组件周围产生等离子体的等离子体发生器，以及施加交流电的驱动处理器 ）电压，其具有至少2个基本频率到探针组件，以及提取过程监控参数。

    Structure for diagnosis system of reaction process
    7.
    发明申请
    Structure for diagnosis system of reaction process 有权
    反应过程诊断系统结构

    公开(公告)号：US20090046285A1

    公开(公告)日：2009-02-19

    申请号：US12222332

    申请日：2008-08-07

    Applicant: Sang Woo Kang ,  Ju Young Yun ,  Dae Jin Seong ,  Yong Hyeon Shin

    Inventor： Sang Woo Kang ,  Ju Young Yun ,  Dae Jin Seong ,  Yong Hyeon Shin

    IPC: G01N21/25

    CPC classification number: G01N21/3504 ,  G01N21/031 ,  G01N2021/151

    Abstract: The present invention relates to a spectroscopy analyzer for real-time diagnostics of process, and more particularly, to a spectroscopy analyzer for real-time diagnostics of process, in which a beam is injected to a reaction byproduct or a reactant and then an output beam is measured, thereby performing quantitative and qualitative analysis of the reaction byproduct or the reactant.

    Abstract translation: 本发明涉及一种用于过程实时诊断的光谱分析仪，更具体地说，涉及用于对工艺进行实时诊断的光谱分析仪，其中将光束注入反应副产物或反应物，然后输出光束 ，由此对反应副产物或反应物进行定量和定性分析。

    Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same
    8.
    发明申请
    Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same 审中-公开
    硫族化物前体化合物和使用其制备硫属化物薄膜的方法

    公开(公告)号：US20070166645A1

    公开(公告)日：2007-07-19

    申请号：US11412028

    申请日：2006-04-26

    Applicant: Hyun Jeong ,  Jong Seon ,  Hyeon Shin ,  Sang Hyun

    Inventor： Hyun Jeong ,  Jong Seon ,  Hyeon Shin ,  Sang Hyun

    IPC: G11B7/24

    CPC classification number: C23C26/02 ,  C07F3/003 ,  C23C2/04

    Abstract: Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.

    Abstract translation: 本文公开了一种可溶性硫族化物前体化合物和使用前体化合物通过溶液沉积方法如旋涂或浸涂制备硫族化物薄膜的方法。 在该方法中，作为可溶于有机溶剂的无机半导体材料的硫族化物前体的使用使得能够制备具有优异的电学和物理性质（例如结晶度）的半导体薄膜。 此外，可以通过溶液沉积工艺制备大面积薄膜，从而有助于简化程序和降低制备成本。 因此，该方法可以有效地应用于薄膜晶体管，电致发光器件，光伏电池和存储器件等各种领域。

    Method of forming trench type isolation film of semiconductor device
    9.
    发明申请
    Method of forming trench type isolation film of semiconductor device 失效
    形成半导体器件沟槽型隔离膜的方法

    公开(公告)号：US20060270184A1

    公开(公告)日：2006-11-30

    申请号：US11440532

    申请日：2006-05-25

    Applicant: Hyeon Shin

    Inventor： Hyeon Shin

    IPC: H01L21/76

    CPC classification number: H01L21/76229 ,  H01L21/76232 ,  H01L27/1052

    Abstract: A method of forming a trench type isolation film of a semiconductor device, including the steps of sequentially forming a pad oxide film and a nitride film for a hard mask on a semiconductor substrate in which a cell region and a peri region are defined; patterning the nitride film using an etch process employing a cell array mask; coating a photoresist on the entire structure including the patterned nitride film; patterning the photoresist using a peri ISO mask; sequentially etching the nitride film, the pad oxide film, and the semiconductor substrate using the patterned photoresist as an etch mask, thereby forming first trenches; stripping the photoresist; etching the semiconductor substrate of the cell region and the peri region using the patterned nitride film as an etch mask, thereby forming second trenches in the cell region and third trenches, which are consecutive to the first trenches, in the peri region; and, forming an isolation film within the second and third trenches. The invention can prevent dislocation depending the concentration of stress on micro trenches and can improve field leakage characteristics.

    Abstract translation: 一种形成半导体器件的沟槽型隔离膜的方法，包括以下步骤：在限定了单元区域和周边区域的半导体衬底上顺序地形成用于硬掩模的衬垫氧化膜和氮化物膜; 使用采用电池阵列掩模的蚀刻工艺对氮化物膜进行构图; 在包括图案化的氮化物膜的整个结构上涂覆光致抗蚀剂; 使用peri ISO掩模对光致抗蚀剂进行图案化; 使用图案化的光致抗蚀剂作为蚀刻掩模，顺序地蚀刻氮化物膜，衬垫氧化物膜和半导体衬底，从而形成第一沟槽; 剥离光刻胶; 使用图案化氮化物膜蚀刻单元区域和周边区域的半导体衬底作为蚀刻掩模，从而在围绕区域的与第一沟槽连续的单元区域和第三沟槽中形成第二沟槽; 以及在第二和第三沟槽内形成隔离膜。 本发明可以根据微沟槽上的应力集中来防止位错，并且可以改善漏电特性。

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