Invention Application
US20060175685A1 Composition for forming low-dielectric constant film comprising fullerene, low-dielectric constant film formed from the composition and method for forming the low-dielectric constant film
审中-公开
用于形成包含富勒烯的低介电常数膜的组合物，由该组合物形成的低介电常数膜和形成低介电常数膜的方法
- Patent Title: Composition for forming low-dielectric constant film comprising fullerene, low-dielectric constant film formed from the composition and method for forming the low-dielectric constant film
- Patent Title (中): 用于形成包含富勒烯的低介电常数膜的组合物，由该组合物形成的低介电常数膜和形成低介电常数膜的方法
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Application No.: US11347238Application Date: 2006-02-06
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Publication No.: US20060175685A1Publication Date: 2006-08-10
- Inventor: Hyeon Shin , Hyun Jeong , Jong Seon
- Applicant: Hyeon Shin , Hyun Jeong , Jong Seon
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG CORNING CO., LTD.
- Current Assignee: SAMSUNG CORNING CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR2005-11405 20050207
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/31
Abstract:
A composition for forming a low-dielectric constant film comprising a substituted fullerene, a low-dielectric constant film formed from the composition, and a method for forming the low-dielectric constant film are provided. The low-dielectric constant film has superior mechanical properties, such as hardness and elastic modulus, and excellent thermal conductivity.
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