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    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition
    3.
    发明申请
    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
    鎓盐化合物，包含盐化合物的高分子化合物，包含高分子化合物的化学增幅抗蚀剂组合物，以及使用该组合物进行图案化的方法

    公开(公告)号：US20100075256A1

    公开(公告)日：2010-03-25

    申请号：US12321111

    申请日：2009-01-15

    Applicant: Hyun-Sang Joo ,  Joo-Hyeon Park ,  Jung-Hoon Oh ,  Dae-Hyeon Shin

    Inventor： Hyun-Sang Joo ,  Joo-Hyeon Park ,  Jung-Hoon Oh ,  Dae-Hyeon Shin

    IPC: G03F7/004 ,  C07C69/52 ,  C07D333/02 ,  C08F14/18 ,  G03F7/20

    CPC classification number: C07C381/12 ,  C07C309/12 ,  C08F20/38 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring.The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

    Abstract translation: 提供由下式（1）表示的化合物：其中R1表示氢原子，三氟甲基，烷基或烷氧基; A表示由下式（2）或式（3）表示的基团：其中R 2，R 3，R 4，R 5和R 6各自独立地表示取代或未取代的烷基，取代或未取代的烯丙基，取代或未取代的 取代或未取代的苄基或取代或未取代的芳基; R2，R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。 包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

    Acid generating agent for chemically amplified resist compositions
    4.
    发明授权
    Acid generating agent for chemically amplified resist compositions 有权
    用于化学放大抗蚀剂组合物的酸产生剂

    公开(公告)号：US08779183B2

    公开(公告)日：2014-07-15

    申请号：US12214429

    申请日：2008-06-19

    Applicant: Jung-Hoon Oh ,  Dong-Cheol Seo ,  Hyun-Sang Joo ,  Chang-Soo Lee

    Inventor： Jung-Hoon Oh ,  Dong-Cheol Seo ,  Hyun-Sang Joo ,  Chang-Soo Lee

    IPC: C07C309/17

    CPC classification number: C07C309/12 ,  C07C25/18 ,  C07C43/225 ,  C07C69/712 ,  C07C309/08 ,  C07C381/12 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/28 ,  C07C2602/42 ,  C07C2603/74 ,  C07C2603/86 ,  C07D333/46

    Abstract: An acid generating agent used for chemically amplified resist compositions is provided, which agent is represented by the following formula (1): wherein X represents a monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, and having at least one hydrogen atom on the ring substituted by an alkyl or alkoxy group which may be unsubstituted or substituted with a group selected from an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group and an aldehyde group, or by a perfluoroalkyl group, a hydroxyalkyl group, or a cyano group; R6 is an alkyl group, an alkoxy group, or a heteroatom selected from the group consisting of N, S and F; m is an integer from 0 to 2; and A+ is an organic counterion.

    Abstract translation: 提供了用于化学放大抗蚀剂组合物的酸产生剂，该试剂由下式（1）表示：其中X表示具有3至30个碳原子的单环或多环烃基，并且其上具有至少一个氢原子 可被未取代的或被选自醚基，酯基，羰基，缩醛基，环氧基，腈基和醛基中的基团取代的烷基或烷氧基取代的环，或由 全氟烷基，羟烷基或氰基; R6是烷基，烷氧基或选自N，S和F的杂原子; m为0〜2的整数; 而A +是一种有机的抗衡离子。

    POLYMER, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION CONTAINING THE SAME
    5.
    发明申请
    POLYMER, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION CONTAINING THE SAME 有权
    聚合物，其制造方法和含有该组合物的耐腐蚀组合物

    公开(公告)号：US20120165499A1

    公开(公告)日：2012-06-28

    申请号：US13330971

    申请日：2011-12-20

    Applicant: Jung-Hoon OH ,  Joon Hee Han ,  Tae Gon Kim ,  Hyun Sang Joo

    Inventor： Jung-Hoon OH ,  Joon Hee Han ,  Tae Gon Kim ,  Hyun Sang Joo

    IPC: C08G63/66

    CPC classification number: C08G63/668 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/2039

    Abstract: Provided is a copolymer containing a repeating unit represented by the following formula (1): wherein R1 represents an alkanediyl group, a heteroalkanediyl group, a cycloalkanediyl group, a heterocycloalkanediyl group, an arylene group, a heteroarylene group, or an alkylarylene group; R2 represents a hydrogen atom, an alkyl group, a heteroalkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an alkoxy group, or an alkylalkoxy group; R3, R4, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n1 represents an integer from 0 to 10; and n2 represents an integer from 0 to 10.The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.

    Abstract translation: 提供含有下式（1）表示的重复单元的共聚物：其中R1表示烷二基，杂烷二基，环烷二基，杂环烷二基，亚芳基，亚杂芳基或烷基亚芳基。 R2表示氢原子，烷基，杂烷基，环烷基，杂环烷基，芳基，杂芳基，烷氧基或烷基烷氧基; R 3，R 4，R 5和R 6各自独立地表示氢原子或碳原子数1〜5的烷基。 n1表示0〜10的整数， n2表示0〜10的整数。当共聚物掺入抗蚀剂组合物中时，可以提供令人满意的抗敏剂图案，其具有高灵敏度，高分辨率，高耐蚀刻性和减少的废气量。

    Polymer and chemically amplified resist composition containing the same
    7.
    发明授权
    Polymer and chemically amplified resist composition containing the same 有权
    含有其的聚合物和化学放大抗蚀剂组合物

    公开(公告)号：US07285373B2

    公开(公告)日：2007-10-23

    申请号：US10940469

    申请日：2004-09-14

    Applicant: Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

    Inventor： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

    IPC: G03F7/039

    CPC classification number: G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397

    Abstract: A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent.The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

    Abstract translation: 化学放大抗蚀剂组合物包括新型聚合物，光致酸产生剂和溶剂。 化学放大抗蚀剂可以形成粘合性优异，对基板的依赖性低，抗紫外波长范围如KrF准分子激光器或ArF准分子激光器的透光性，耐干蚀刻性，灵敏度，分辨率和显影性。 此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的 由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition
    10.
    发明授权
    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
    鎓盐化合物，包含盐化合物的高分子化合物，包含高分子化合物的化学增幅抗蚀剂组合物，以及使用该组合物进行图案化的方法

    公开(公告)号：US08158327B2

    公开(公告)日：2012-04-17

    申请号：US12321111

    申请日：2009-01-15

    Applicant: Hyun-Sang Joo ,  Joo-Hyeon Park ,  Jung-Hoon Oh ,  Dae-Hyeon Shin

    Inventor： Hyun-Sang Joo ,  Joo-Hyeon Park ,  Jung-Hoon Oh ,  Dae-Hyeon Shin

    IPC: G03F7/004 ,  G03F7/30 ,  C08F228/02

    CPC classification number: C07C381/12 ,  C07C309/12 ,  C08F20/38 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

    Abstract translation: 提供由下式（1）表示的化合物：其中R1表示氢原子，三氟甲基，烷基或烷氧基; A表示由下式（2）或式（3）表示的基团：其中R 2，R 3，R 4，R 5和R 6各自独立地表示取代或未取代的烷基，取代或未取代的烯丙基，取代或未取代的 取代或未取代的苄基或取代或未取代的芳基; R2，R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。 包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

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