公开(公告)号：US4364100A

公开(公告)日：1982-12-14

申请号：US143216

申请日：1980-04-24

Applicant: Harold D. Edmonds ,  Gary Markovits

Inventor： Harold D. Edmonds ,  Gary Markovits

IPC: H05K3/46 ,  H01B3/12 ,  H01L23/15 ,  H01L23/538 ,  H05K1/03

CPC classification number: H01L23/5383 ,  H01L23/15 ,  H01L2224/16 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/10253 ,  H01L2924/15312 ,  H05K1/0306 ,  H05K3/4629

Abstract: A multi-layer metallized substrate comprises a matrix of sintered silicon particles joined by a thin insulating layer of silicon dioxide or silicon nitride. Semiconductor circuit chips are bonded to the surface of the substrate to form an electrically connected, unitary integrated circuit module structure.

Abstract translation: 多层金属化基板包括通过二氧化硅或氮化硅的薄绝缘层连接的烧结硅颗粒的基体。 半导体电路芯片被结合到基板的表面以形成电连接的，单一的集成电路模块结构。

公开(公告)号：US4261781A

公开(公告)日：1981-04-14

申请号：US7857

申请日：1979-01-31

Applicant: Harold D. Edmonds ,  Vincent J. Lyons ,  Gary Markovits

Inventor： Harold D. Edmonds ,  Vincent J. Lyons ,  Gary Markovits

IPC: H01L21/52 ,  B28D1/00 ,  B28D5/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/78 ,  H01L23/492 ,  H01L5/00

CPC classification number: H01L23/4926 ,  B28D1/005 ,  B28D5/0094 ,  H01L21/302 ,  H01L21/3043 ,  H01L21/67092 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/028 ,  Y10T156/1059

Abstract: Compound semiconductor bodies are formed by bonding a layer of supporting material to the two opposite faces of a semiconductor wafer and then cutting the semiconductor wafer into two parts in a plane parallel to said faces. The cut surface of each part is then polished.

Abstract translation: 通过将支撑材料层粘合到半导体晶片的两个相对面，然后在与所述面平行的平面中将半导体晶片切割成两部分而形成复合半导体本体。 然后对每个部件的切割表面进行抛光。

公开(公告)号：US4506158A

公开(公告)日：1985-03-19

申请号：US471927

申请日：1983-03-03

Applicant: Robert H. Cadwallader ,  Harold D. Edmonds ,  Murlidhar V. Kulkarni

Inventor： Robert H. Cadwallader ,  Harold D. Edmonds ,  Murlidhar V. Kulkarni

IPC: G01J3/28 ,  G01N21/35 ,  G01N21/59 ,  G01J1/00

CPC classification number: G01N21/5911 ,  G01N2021/3568 ,  G01N21/474

Abstract: A new spectrometer station for semiconductor wafers is provided that permits operation in both the reflective and absorption modes either simultaneously or sequentially while the wafer is in a horizontal position. The wafer is positioned in the station on a movable platform. Positioned under the platform is an infrared detector. An optical system over the platform focuses an interferometer beam at that portion of the wafer positioned right over the detector. It also directs light from the beam reflected off the top surface of the wafer at a second infrared detector. An orientor rotates the wafer on the platform so that movement of the wafer by the orientor and movement of the platform allows any part of the wafer to be examined as a test point by the spectrometer.

Abstract translation: 提供了一种用于半导体晶片的新的光谱仪站，其允许在晶片处于水平位置的同时或顺序地同时在反射和吸收模式中进行操作。 晶片位于可移动平台上的工位中。 位于平台下方是红外探测器。 平台上的光学系统将干涉仪光束聚焦在位于检测器正上方的晶片的那部分。 它还引导来自第二红外检测器的从晶片顶表面反射的光束的光。 定向器使晶片在平台上旋转，使得定向器和平台的移动使晶片的移动允许通过光谱仪检查晶片的任何部分作为测试点。

公开(公告)号：US4590574A

公开(公告)日：1986-05-20

申请号：US489930

申请日：1983-04-29

Applicant: Harold D. Edmonds ,  Murlidhar V. Kulkarni

Inventor： Harold D. Edmonds ,  Murlidhar V. Kulkarni

IPC: G01N21/35 ,  G06F17/00 ,  G06F15/20 ,  G06G7/58

CPC classification number: G01N21/3563

Abstract: An infrared Fourier transform spectrometer is used to measure the absorbance spectrum of a sample of unknown oxygen or carbon content. From the spectrum, the roughness of the wafer is defined, and such roughness definition is then used to calculate the oxygen or carbon content. The roughness can be defined by using the slope of the absorbance spectrum or by the degree of shift of the baseline of the oxygen or carbon peak.

Abstract translation: 使用红外傅里叶变换光谱仪来测量未知氧或碳含量的样品的吸收光谱。 从光谱中，定义晶片的粗糙度，然后使用这种粗糙度定义来计算氧或碳含量。 粗糙度可以通过使用吸收光谱的斜率或氧或碳峰的基线的偏移程度来定义。

公开(公告)号：UST979005I4

公开(公告)日：1979-02-06

申请号：US788179

申请日：1977-04-18

Applicant: Harold D. Edmonds

Inventor： Harold D. Edmonds

IPC: H01L33/00

CPC classification number: H01L33/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: a back-side light-emitting diode comprised of an N-type free-standing monocrystalline planar substrate of a III-V ternary compound in which a P-type impurity is diffused into one of the planar surfaces, of the substrate, with the distance x in microns from the junction depth to the other planar surface conforming to the relationship x = 0.5/.alpha., where .alpha. is the absorption coefficient of said compound at a 7,000 Angstrom wavelength.

公开(公告)号：US4144099A

公开(公告)日：1979-03-13

申请号：US847383

申请日：1977-10-31

Applicant: Harold D. Edmonds ,  Gary Markovits

Inventor： Harold D. Edmonds ,  Gary Markovits

IPC: B24B7/22 ,  H01L21/304 ,  H01L21/322 ,  H01L21/324

CPC classification number: H01L21/02008 ,  B24B7/228 ,  H01L21/3221 ,  Y10S148/017 ,  Y10S148/024 ,  Y10S148/051 ,  Y10S148/06 ,  Y10S148/061 ,  Y10S148/138 ,  Y10S438/974

Abstract: Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800.degree.-1150.degree. C. for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600.degree. C., and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture.

Abstract translation: 用于集成电路器件制造的获得半导体晶片通过将晶片的背面研磨至约8-35微米的深度来制备，将晶片加热至约800℃-1150℃的温度约为约 1至3小时，并将晶片快速冷却至低于约600℃的温度，并抛光晶片的两侧以形成抛光的，基本无损的前表面和光滑的背面，其具有残留的结晶损伤层 以在设备制造期间提供额外的吸气。