公开(公告)号：US4261781A

公开(公告)日：1981-04-14

申请号：US7857

申请日：1979-01-31

Applicant: Harold D. Edmonds ,  Vincent J. Lyons ,  Gary Markovits

Inventor： Harold D. Edmonds ,  Vincent J. Lyons ,  Gary Markovits

IPC: H01L21/52 ,  B28D1/00 ,  B28D5/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/78 ,  H01L23/492 ,  H01L5/00

CPC classification number: H01L23/4926 ,  B28D1/005 ,  B28D5/0094 ,  H01L21/302 ,  H01L21/3043 ,  H01L21/67092 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/028 ,  Y10T156/1059

Abstract: Compound semiconductor bodies are formed by bonding a layer of supporting material to the two opposite faces of a semiconductor wafer and then cutting the semiconductor wafer into two parts in a plane parallel to said faces. The cut surface of each part is then polished.

Abstract translation: 通过将支撑材料层粘合到半导体晶片的两个相对面，然后在与所述面平行的平面中将半导体晶片切割成两部分而形成复合半导体本体。 然后对每个部件的切割表面进行抛光。